CN1449458A - 薄膜金属氧化物结构及其制造方法 - Google Patents

薄膜金属氧化物结构及其制造方法 Download PDF

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Publication number
CN1449458A
CN1449458A CN01813243A CN01813243A CN1449458A CN 1449458 A CN1449458 A CN 1449458A CN 01813243 A CN01813243 A CN 01813243A CN 01813243 A CN01813243 A CN 01813243A CN 1449458 A CN1449458 A CN 1449458A
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China
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layer
perovskite oxide
single crystal
perovskite
growing
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Pending
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CN01813243A
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English (en)
Chinese (zh)
Inventor
K·费森贝瑟
J·M·芬德
J·瑞姆达尼
R·德鲁派德
W·J·欧姆斯
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Motorola Solutions Inc
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Motorola Inc
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Publication of CN1449458A publication Critical patent/CN1449458A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
CN01813243A 2000-07-24 2001-07-19 薄膜金属氧化物结构及其制造方法 Pending CN1449458A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62487700A 2000-07-24 2000-07-24
US09/624,877 2000-07-24

Publications (1)

Publication Number Publication Date
CN1449458A true CN1449458A (zh) 2003-10-15

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CN01813243A Pending CN1449458A (zh) 2000-07-24 2001-07-19 薄膜金属氧化物结构及其制造方法

Country Status (4)

Country Link
JP (1) JP2004505444A (fr)
CN (1) CN1449458A (fr)
AU (1) AU2001276989A1 (fr)
WO (1) WO2002009159A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789260B (zh) * 2010-01-19 2013-03-20 湘潭大学 一种铁电存储器用外延应变铁电薄膜及调控其应变的方法
CN106277041A (zh) * 2016-11-14 2017-01-04 东北大学 一种镓酸镧固溶钛酸钡非晶的制备方法
CN109119530A (zh) * 2017-06-23 2019-01-01 松下知识产权经营株式会社 薄膜结构体及其制造方法
CN111926295A (zh) * 2020-09-01 2020-11-13 深圳大学 一种巨四方相PbTiO3薄膜的制备方法
CN112537799A (zh) * 2019-09-20 2021-03-23 中国科学院物理研究所 调控钙钛矿相钴氧化物材料的氧空位序相的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7072093B2 (en) 2003-04-30 2006-07-04 Hewlett-Packard Development Company, L.P. Optical interference pixel display with charge control
DE102004058958B4 (de) * 2004-12-08 2006-10-26 Forschungszentrum Jülich GmbH Halbleiter-Bauelement aus einem Material mit hoher Bandlücke und Dielektrizitätskonstante
JP4678410B2 (ja) * 2008-02-12 2011-04-27 セイコーエプソン株式会社 ヘッドの製造方法及びプリンタの製造方法
CN101913860B (zh) * 2010-08-19 2012-11-21 西北工业大学 一种钛酸铋基高居里温度压电陶瓷及其制备方法
JP5716407B2 (ja) * 2011-01-17 2015-05-13 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US8796121B1 (en) * 2013-11-19 2014-08-05 Translucent, Inc. Stress mitigating amorphous SiO2 interlayer
CN115418718A (zh) * 2022-09-07 2022-12-02 武汉大学 基于二维尖晶石型铁氧体薄膜的产品及其制备方法和应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450575A (en) * 1987-08-21 1989-02-27 Nec Corp Substrate for electronic device
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
EP0568064B1 (fr) * 1992-05-01 1999-07-14 Texas Instruments Incorporated Oxydes à haute constante diélectrique contenant du Pb/Bi utilisant une perovskite ne contenant pas de Pb/Bi comme couche barrière
US5650362A (en) * 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789260B (zh) * 2010-01-19 2013-03-20 湘潭大学 一种铁电存储器用外延应变铁电薄膜及调控其应变的方法
CN106277041A (zh) * 2016-11-14 2017-01-04 东北大学 一种镓酸镧固溶钛酸钡非晶的制备方法
CN106277041B (zh) * 2016-11-14 2018-01-12 东北大学 一种镓酸镧固溶钛酸钡非晶的制备方法
CN109119530A (zh) * 2017-06-23 2019-01-01 松下知识产权经营株式会社 薄膜结构体及其制造方法
CN109119530B (zh) * 2017-06-23 2023-10-17 松下知识产权经营株式会社 薄膜结构体及其制造方法
CN112537799A (zh) * 2019-09-20 2021-03-23 中国科学院物理研究所 调控钙钛矿相钴氧化物材料的氧空位序相的方法
CN112537799B (zh) * 2019-09-20 2021-09-28 中国科学院物理研究所 调控钙钛矿相钴氧化物材料的氧空位序相的方法
CN111926295A (zh) * 2020-09-01 2020-11-13 深圳大学 一种巨四方相PbTiO3薄膜的制备方法
CN111926295B (zh) * 2020-09-01 2022-08-09 深圳大学 一种巨四方相PbTiO3薄膜的制备方法

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WO2002009159A3 (en) 2002-04-25
WO2002009159A2 (fr) 2002-01-31
JP2004505444A (ja) 2004-02-19
AU2001276989A1 (en) 2002-02-05

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