CN1535301A - 硅氧烷树脂 - Google Patents

硅氧烷树脂 Download PDF

Info

Publication number
CN1535301A
CN1535301A CNA028147286A CN02814728A CN1535301A CN 1535301 A CN1535301 A CN 1535301A CN A028147286 A CNA028147286 A CN A028147286A CN 02814728 A CN02814728 A CN 02814728A CN 1535301 A CN1535301 A CN 1535301A
Authority
CN
China
Prior art keywords
carbon atoms
silicone resin
groups
sio
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028147286A
Other languages
English (en)
Chinese (zh)
Inventor
J
J·阿尔鲍夫
R·博伊斯沃特
D·布加尔斯基
P·切瓦里尔
K·艾格奇
R·金
D－L·欧
K·苏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Belgium SPRL
DuPont Toray Specialty Materials KK
Dow Silicones Corp
Original Assignee
Dow Corning SA
Dow Corning Asia Ltd
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/121,971 external-priority patent/US6596404B1/en
Application filed by Dow Corning SA, Dow Corning Asia Ltd, Dow Corning Corp filed Critical Dow Corning SA
Publication of CN1535301A publication Critical patent/CN1535301A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
CNA028147286A 2001-07-26 2002-06-18 硅氧烷树脂 Pending CN1535301A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US91589901A 2001-07-26 2001-07-26
US09/915,899 2001-07-26
US10/121,971 2002-04-15
US10/121,971 US6596404B1 (en) 2001-07-26 2002-04-15 Siloxane resins

Publications (1)

Publication Number Publication Date
CN1535301A true CN1535301A (zh) 2004-10-06

Family

ID=26820023

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028147286A Pending CN1535301A (zh) 2001-07-26 2002-06-18 硅氧烷树脂

Country Status (4)

Country Link
EP (1) EP1412435A2 (fr)
CN (1) CN1535301A (fr)
TW (1) TW591057B (fr)
WO (1) WO2003011945A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101501139B (zh) * 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
CN111006182A (zh) * 2018-10-04 2020-04-14 Zkw集团有限责任公司 用于机动车前照灯光模块的投影机构和用于制造投影机构的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100683428B1 (ko) * 1999-10-25 2007-02-20 다우 코닝 코포레이션 용액 용해도와 안정성이 우수한 실리콘 수지 조성물
WO2006065310A2 (fr) * 2004-12-17 2006-06-22 Dow Corning Corporation Revetement en resine de siloxane
CA2920646A1 (fr) * 2016-02-12 2017-08-12 Seastar Chemicals Inc. Compose organometallique et methode
JP6923199B2 (ja) * 2017-11-07 2021-08-18 国立研究開発法人産業技術総合研究所 ハロシランの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999003926A1 (fr) * 1997-07-15 1999-01-28 Asahi Kasei Kogyo Kabushiki Kaisha Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation
US6231989B1 (en) * 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
EP1095958B1 (fr) * 1999-10-25 2006-02-08 Dow Corning Corporation Compositions solubles de résine à base de silicone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101501139B (zh) * 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
CN111006182A (zh) * 2018-10-04 2020-04-14 Zkw集团有限责任公司 用于机动车前照灯光模块的投影机构和用于制造投影机构的方法

Also Published As

Publication number Publication date
WO2003011945A3 (fr) 2003-05-01
EP1412435A2 (fr) 2004-04-28
WO2003011945A2 (fr) 2003-02-13
TW591057B (en) 2004-06-11

Similar Documents

Publication Publication Date Title
US6596404B1 (en) Siloxane resins
CN1187799C (zh) 用于超大规模集成电路的经硅氧烷聚合物处理的纳米级多孔二氧化硅
US8053173B2 (en) Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
KR100682614B1 (ko) 실란계 나노 다공성 실리카 박막 및 그 제조방법
CN1616468A (zh) 多官能环状硅氧烷化合物和由该化合物制备的硅氧烷基聚合物和用该聚合物制备介电薄膜的方法
JPH11512474A (ja) ベータ−置換オルガノシルセスキオキサンおよびその使用法
CN1629222A (zh) 用于形成介电膜的组合物及形成介电膜或图案的方法
WO2007072750A1 (fr) Liquide de revêtement permettant de former un film de revetement de silice amorphe a faible constante diélectrique et film de revetement de silice amorphe a faible constante diélectrique obtenu à partir dudit liquide de revêtement
CN104955900B (zh) 包含聚硅氧烷的固化性组合物及其固化物
CN1597738A (zh) 新颖的硅氧烷基树脂和使用该树脂形成的间层绝缘膜
CN1355858A (zh) 由聚合物的分解获得的低介电纳米孔材料
CN1260273C (zh) 蚀刻终止树脂
CN1680466A (zh) 用多面体分子倍半硅氧烷，形成半导体器件用层间电介质膜的方法
CN100393730C (zh) 多官能环状硅酸盐（或酯）化合物，由该化合物制得的基于硅氧烷的聚合物和使用该聚合物制备绝缘膜的方法
CN1535300A (zh) 硅氧烷树脂
CN1511881A (zh) 用于制备含有新型成孔材料之多孔电介质薄膜的组合物
CN1536023A (zh) 多孔膜形成用组合物,多孔膜的制备方法,多孔膜、层间绝缘膜和半导体器件
CN1576297A (zh) 硅氧烷基树脂及用其制造的半导体的层间绝缘膜
CN101044604A (zh) 新聚有机硅氧烷介电材料
CN1836017A (zh) 涂料组合物和通过使用该涂料组合物制得的低介电硅质材料
CN1572816A (zh) 硅氧烷基的树脂和使用其制造的半导体器件的层间绝缘膜
TWI874433B (zh) 製造低介電常數矽質膜的組成物及使用其製造固化膜及電子裝置的方法
WO2008082128A1 (fr) Copolymeres de silsesquioxane a base de norbornene, derive de silane a base de norbornene utilise dans la preparation de ces copolymeres et procede de preparation d'un film isolant a faible constante dielectrique contenant ces copolymeres
JP2004307692A (ja) 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置
CN1543664A (zh) 有机硅树脂和由其生产的多孔材料

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication