CN1577110A - Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition - Google Patents

Abstract

The present invention provides a photoresist stripping liquid composition, which is used in the manufacturing process of semiconductor elements and liquid crystal display elements, etc. Photoresist, using dipping method, spraying method or monolithic method, is easy to peel off at low temperature and in a short time. For metal wiring exposed to the stripping solution, especially the metal film of the multi-junction structure containing copper The substrate of the base material and inorganic material layer has excellent corrosion resistance. In the subsequent process, there is no need to use organic solvents such as isopropanol and dimethyl sulfoxide, and only water can be used for rinsing, and no alkyl groups are added. Pyrrolidone compounds, sulfone compounds or sulfoxide compounds, benzotriazole compounds, which are environmentally friendly.

Description

Photoresist stripping liquid composition and method for stripping photoresist using photoresist stripping liquid composition

technical field

The present invention relates to a photoresist stripping liquid composition and a photoresist stripping method using the photoresist stripping liquid composition. More specifically, it relates to a stripping liquid composition for stripping a photoresist film remaining after wet etching and dry etching processes in the manufacturing process of semiconductor elements and liquid crystal display elements, and a composition using a stripping liquid photoresist stripping method.

Background technique

The manufacture of semiconductor elements or liquid crystal display elements is usually carried out sequentially on semiconductor substrates or glass substrates: the metal wiring formation process of setting metal, inorganic materials or oxide film layers; the process of setting photoresist layers; An exposure process for transferring a mask pattern on a resist; an etching process for etching a film according to a pattern; and a lift-off process for removing a photoresist. The drawings are diagrams for sequentially explaining the metal pattern forming process by the above-mentioned exposure process, etching process, and lift-off process.

Recently, due to the trend of ultra-fine patterning caused by the high integration of semiconductor elements and liquid crystal display elements, the etching conditions of metal or oxide films have become stricter, and the deterioration or cured photoresist caused by the etching process Occurs more frequently. The specific etching process is divided into wet etching using electrochemical reaction and dry etching using radical reaction using plasmaized etching gas. It is difficult to remove the photoresist that has deteriorated or cured after such an etching step even with a conventional conventional photoresist stripping solution. If such deteriorated or cured photoresist is not completely removed, the photoresist residue will become the main cause of disconnection and short circuit in the subsequent process, and it will also become the main cause of semiconductor elements or liquid crystal display elements, etc. The reason for the decrease in the pass rate in production. In addition, with the high integration of semiconductor elements and ultra-fine patterns, the resistance (wiring resistance) of metals used in semiconductor elements and wiring delay due to wiring capacity are becoming problems. In order to improve wiring resistance, it has been proposed to use a metal having a lower resistance than aluminum (Al), which has been mainly used in the past, such as copper (Cu), as a wiring material, and this is in the stage of practical use.

As a solution for stripping the patterned photoresist layer, that is, a stripper, inorganic acids, inorganic bases, or organic solvents, such as halogenated organic solvents, alkylbenzenesulfonic acids, aromatic hydrocarbon solvents, and alkyl Mixtures of benzenesulfonic acid, etc. However, when an inorganic acid or an inorganic base is used as an active ingredient of a stripping agent, it may corrode the lower metal film, or cause difficulties in operation such as being harmful to the human body, so an organic solvent is usually used, and recently, it is often used Amine-based stripper containing polar solvents and amines.

In the amine-based stripper composition, it is known that the amine component is an essential component for effectively removing the cross-linked resist film caused by baking, plasma etching, ion implantation, or other LSL device manufacturing processes. . However, amine-based photoresist strippers often cause serious problems of corrosion, especially when aluminum or copper substrates are used.

Such corrosion is considered to be caused by the ionization of water by the remaining amine in the peeling and cleaning step after the use of water after the stripping solution composition remains on the substrate surface or the substrate carrier after the stripping step. In other words, the amine component of the stripping composition, while not corroding the substrate itself, has the potential to act as a catalyst in the same way that water causes corrosion. In addition to such corrosion problems, due to the difference in the solubility of the substances in the stripping agent and water, the substances dissolved in the residual stripping liquid composition are often precipitated when washing with water directly after the stripping process.

In order to solve such a problem, an intermediate washing step using an organic solvent is introduced between the stripping step and the post-stripping washing step using water.

It is known that for such purposes isopropanol or dimethylsulfoxide, for example, are useful. In addition, an amine-based stripping composition to which an anticorrosion agent capable of alleviating the problem of corrosion caused by residual amine in the post-peeling stage has been added has been proposed for other substances.

Examples of documents proposing such countermeasures as above are as follows.

U.S. Patent No. 4617251 discloses that a specific amine compound [for example, 2-(2-aminoethoxy) ethanol, 2-(2-aminoethylamino) ethanol, or a mixture thereof] and a specific polar solvent ( For example, N-methyl-2-pyrrolidone, tetrahydropropanol, isophorone, dimethyl sulfoxide, dimethyl adipate, dimethyl glutarate, sulfolane, γ-butyrolactone, N, N-dimethylacetamide and mixtures thereof) positive-type photoresist stripper composition, in addition, U.S. Patent No. 4770713 discloses, containing specific amide acetamide) and a positive photoresist stripper composition of a specific amine compound (for example, monoethaneamine). In addition, U.S. Patent Publication No. 4824763 discloses that it contains triamine (for example, diethylenetri amine) and a nonpolar solvent (for example, N-methyl-2-pyrrolidone, dimethylformamide, butyrolactone, etc.) No. discloses a stripping liquid composition containing hydroxylamine (for example, hydroxylamine), alkanolamine and any polar solvent.

U.S. Patent No. 4786578 proposes a cleaning solution used after photoresist stripping, but said cleaning solution contains nonionic surfactants (for example, ethoxylated alkylphenols) and organic Base (eg, mono, di, or triethylamine).

U.S. Patent No. 4824762 discloses, containing glycol ether (for example, diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monomethyl ether) and aliphatic amine (for example, monoethanolamine or Triisopropanolamine) photoresist stripping post-cleaning solution, but said post-cleaning solution is non-aqueous.

U.S. Patent No. 4904571 discloses that a solvent (for example, water, alcohol, ether, ketone, etc.), a basic compound (for example, primary amine, secondary amine, tertiary amine, quaternary amine, cyclic amine, etc.) amines, polyamines, quaternary ammonium amines, sulfonium hydroxide and alkaline hydroxides, etc.) and boron hydride compounds (for example, sodium borohydride, dimethylaminophorone, pyridoxolone) dissolved in the solvent etc.) photoresist stripper for printed circuit boards.

International Publication No. WO 88-05813 proposes a positive or negative photoresist stripper containing butyrolactone or caprolactone, a quaternary ammonium hydroxide compound, and an optional nonionic surfactant.

U.S. Patent No. 5478443 and U.S. Patent No. 5320709 propose to use specific organic corrosion inhibitors (ethylene glycol and dimethyl sulfoxide) and fluorine-containing compounds (ammonium fluoride, hydrofluoric acid, perfluoric acid, etc.) to solve the problem. The problem of metal corrosion. However, these compositions have a disadvantage that a large amount of organic solvent needs to be dissolved, and thus a large amount of waste must be removed.

Residues after etching are not easy to remove, so U.S. Patent No. 5,612,304 proposes a polar solvent containing specific conditions, specific alkanolamines, amino acids with hydroxyl groups, and redox solvents with specific redox potential energy. Agent stripping fluid composition. The above-mentioned documents describe that an amino acid having a hydroxyl group is used as an anticorrosion agent, and that an organic or inorganic acid lowers the alkalinity of an amine-containing release solution to deteriorate the release force.

US Patent Publication No. 2002-0068244 proposes a resist stripper containing at least one of an alkylene carbonate, an organic peroxide, and an N-substituted morphine.

Korean Patent Laid-Open Publication No. 2001-0018377 proposes a resist stripper containing an amine compound, a glycol-based solvent, and a perfluoroalkylethylene oxide.

Korean Patent Laid-Open Publication No. 2000-0016878 proposes a stripping liquid combination consisting of alkoxy N-hydroxyalkyl alkane amine, a polar substance with a dipole moment greater than or equal to 3, a damage preventing agent, and an alkanolamine thing.

Korean Patent Laid-Open Publication No. 2001-0040496 proposes a stripper composition using a pyriminone compound for a novolac/quinonediazide compound-based positive resist.

U.S. Patent No. 5480585 and Japanese Patent Application Laid-Open No. 5-281753 proposed that the chemical structural formula is H _3-n N((CH ₂ ) _m OH) _n (m is 2 or 3, n is 1, 2 or 3) The organic stripping agent for photoresist is an alkanolamine, a sulfone compound or a sulfoxide compound, and a hydroxyl compound whose chemical structural formula is C ₆ H _6-n (OH) _n (n is 1, 2 or 3).

Japanese Patent Application Publication No. 4-124668 proposes that 20% by weight to 90% by weight of organic amine, 0.1% by weight to 20% by weight of phosphoric acid ester, and 0.1% by weight to 20% by weight of 2-butyne-1,4- A stripper composition for photoresist composed of diol and ethylene glycol monoalkyl ether and/or aprotic polar solvent as the balance.

Here, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, etc. are used as ethylene glycol monoalkyl ether, and dimethyl ethylene glycol is used as an aprotic polar solvent. Sulfone, N,N-dimethylacetamide, etc., in order to prevent the organic amines of the photoresist from corroding the metal layers such as aluminum and copper, within the limit of not reducing the stripping characteristics, add 2-butyne-1,4 - Diol and phosphate ester surfactants.

Japanese Patent Application No. 64-42653 proposes to contain dimethyl sulfoxide greater than or equal to 50% by weight, preferably greater than or equal to 70% by weight, and contain 1% to 50% by weight of diethylene glycol monoalkyl A solvent containing at least one of ether, diethylene glycol dialkyl ether, γ-butyrolactone, and 1,3-dimethyl-2-imidazolidinone, and nitrogen-containing organic compounds such as monoethanolamine at 0.1% to 5% by weight A stripper composition for a photoresist of a hydroxy compound.

It is described here that when the dimethyl sulfoxide is less than 50% by weight, the releasability is significantly lowered, and when the nitrogen-containing organic hydroxy compound solvent exceeds 5% by weight, the metal layer such as aluminum is corroded.

Korean Patent Laid-Open Publication No. 1999-0062480 proposes a stripping solution characterized by comprising an organic amine compound, a protic glycol ether compound, an aprotic multipolar compound, and an alkylpyrrolidone compound.

Korean Patent Publication No. 2000-0008103 proposes to contain 5% to 15% by weight of alkanolamine, 35% to 55% by weight of sulfoxide or sulfone compound, and 35% to 55% by weight of ethylene glycol A stripper composition for photoresist of ether and surfactant.

It is described here that when the alkanolamine exceeds 15% by weight, or when the sulfoxide or sulfone compound is less than 35% by weight, the absorptivity with the entire LCD film becomes small, the contact angle becomes large, and the peeling performance by air is reduce.

No. 5,174,816 of U.S. Patent Gazette discloses, containing the quaternary ammonium hydroxide like trimethyl (2-hydroxyethyl) ammonium hydroxide by 0.01% by weight～15% by weight, 0.1% by weight～20% by weight of wood-like A composition for removing chlorine remaining on the surface of an aluminum linear pattern substrate after dry etching, such as sugar alcohol, mannose, glucose, etc., or an aqueous solution of sugar alcohol.

Japanese Patent Application Laid-Open No. 7-028254 discloses a non-corrosive anti-corrosion film removal solution containing sugar alcohol, alcohol amine, water and quaternary ammonium hydroxide.

Japanese Patent Application Laid-Open No. 7-247498 discloses a cleaning solution containing quaternary ammonium hydroxide, sugar or sugar alcohol, and a urea compound.

Korean Patent Laid-Open Publication No. 2001-0106537 discloses that it contains 3% to 10% by weight of an organic amine compound, 30% to 60% by weight of N,N-dimethylacetamide (DMAc), N,N- Solvents such as dimethylformamide (DMF), 1,3-dimethyl-2-imidazolinone (DMI), N-methyl-2-pyrrolidone (NMP), 30% by weight to 60% by weight of water, Resist stripping solution combination of 1% to 10% by weight of catechol, resorcinol, or their mixture, and 1% to 10% by weight of linear polyhydric alcohol with 4 to 6 carbon atoms things.

Korean Patent Laid-Open Publication No. 2001-0062828 discloses that a nitrogen-containing organic hydroxylamine, a water-soluble organic solvent (for example, N-methyl-2-pyrrolidone (NMP) and dimethyl sulfoxide), water, and a specific benzene A stripping solution for photoresists composed of triazole compounds.

However, the organic solvent strippers proposed in such prior art use environmentally harmful substances such as alkylpyrrolidone compounds and sulfone compounds or sulfoxide compounds as organic solvents, and their ability to strip photoresists and residues It is not enough, and the solubility of the polymer substance forming the photoresist is not enough, so for the residue of the photoresist that has been stripped, or attached to the semiconductor substrate or glass substrate, etc., Or not only generate additional solvent by-products, but also because the process conditions are high temperature, it is unfavorable in terms of environment and disposal costs, and it is limited in cleaning residues, and it is necessary to use isopropyl The problem of organic solvents such as alcohol and dimethyl sulfoxide.

In addition, the existing stripping liquid composition cannot achieve the corrosion prevention of the substrate and the stripping property of the photoresist film and the photoresist deteriorated film at the same time in a well-balanced manner. Wires, especially substrates of multi-joint metal wirings containing copper or substrates forming metal wirings and inorganic materials.

In particular, due to the recent increase in size and mass production of semiconductor elements and liquid crystal display elements, compared with the dipping (Dipping) method which is an existing method of using a release agent, the spray method (Spray) or one-by-one treatment The photoresist stripping method of the single wafer system and pneumatic method is becoming popular, so it is desired to develop a method suitable for such spray method, single wafer system and pneumatic method, which is suitable for metal wiring, especially copper wiring. An environment-friendly stripping liquid composition capable of stripping both the wire and the inorganic material layer without corrosion.

Contents of the invention

Therefore, the technical problem to be solved by the present invention is to provide a photoresist that has deteriorated or solidified in the wet etching or dry etching process, using a dipping method, a spray method, a single-chip method, or a pneumatic method, at a low temperature and at a low temperature. It can be easily peeled off in a short time, and has excellent corrosion resistance to substrates provided with metal wiring exposed to the stripping solution, especially a metal film and inorganic material layer of a multi-junction structure including copper, and is not used in the subsequent washing process. Requires the use of organic solvents such as isopropyl alcohol and dimethyl sulfoxide, rinses only with water, and does not add environmentally harmful substances such as alkylpyrrolidone compounds, sulfone compounds, or sulfoxide compounds, and is an environmentally friendly photoresist Stripper composition.

Another technical subject to be solved by the present invention is to provide a method for stripping a photoresist film using the stripping liquid composition.

In order to achieve the above technical problem, the present invention provides, relative to the total amount of the composition, containing 5% by weight to 50% by weight of organic amine compound, 5% by weight to 50% by weight of glycol ether compound, 0.01% by weight to A stripping solution comprising 1% by weight of the compound of the following chemical formula 1, 0.1% to 10% by weight of an anti-corrosion agent and the balance of deionized water.

Chemical structure 1

(In the formula, X is C or N, at least one is N. Among them, R ⁴ and R ⁵ are hydrogen atom, alkyl, aryl, aralkyl, halogen, trihalomethyl, amino, heterocycle, NHR ⁶ , NR ⁷ R ⁸ , CN, CO ₂ H, CO ₂ R ⁹ , OH or OR ¹⁰ groups, at this time, R ⁶ to R ¹⁰ represent alkyl groups, aryl groups or aralkyl groups, respectively.)

In addition, another technical subject of the present invention is to contain 5% to 50% by weight of an organic amine compound, 5% to 50% by weight of a glycol ether compound, and 0.01% to 1% by weight of the total amount of the composition. % chemical structure formula 1 compound, 0.1% by weight to 10% by weight of anti-corrosion agent and the balance of deionized water stripping liquid composition stripping method to achieve.

According to the stripping method of photoresist in order to achieve the other technical problems mentioned above, just can provide the stripping method of photoresist and polymer, it is characterized in that, make the base that is provided with photoresist film The sheet is contacted with the stripping fluid composition.

The composition may contain a surfactant, an antifoaming agent, or a mixture thereof, etc., as additives usually added in stripping solutions.

Specific examples of the organic amine compound used in the cleaning composition of the present invention include monoethanolamine, diethanolamine or triethanolamine, monopropanolamine, dipropanolamine or tripranolamine, monoisopropanol amine, diisopropanolamine or triisopropanolamine, butanolamine, butyl monoethanolamine, ethyldiethanolamine, N-methylaminoethanol, etc. In the present invention, as the amine compound, preferably monoethanolamine, diethanolamine, triethanolamine, N-methylaminoethanol, isopropanolamine or a mixture thereof, more preferably monoethanolamine, N-methylaminoethanol, isopropanolamine or their mixture.

Generally speaking, glycol ether derivatives are biodegradable environmentally friendly organic solvents, have both ether groups and hydroxyl groups in the molecule, and are widely used as extremely excellent solvents that can be mixed well with water. Adding such glycol ethers can act as a surfactant to reduce the surface tension of the solution and increase the penetrating force, thereby strengthening the stripping ability of the stripping solution at a lower temperature.

The glycol ether compound used in the present invention is generally an alkylene glycol monoether. Specific examples include the following compounds and the like.

_{CH3CH2CH2CH2 - OCH2CH2 - OH ;}

_{CH3CH2CH2CH2 - OCH2CH2 - OCH2CH2 - OH ;}

_{CH3CH2CH2CH2 - OCH2CH2 - OCH2CH2 - OCH2CH2 - OH ;}

_{CH3CH2CH2CH2 - OCH2CH2 - OCH2CH2 - OCH2CH2 - OCH2CH2 - OH ;}

CH3 _{- OCH2CH2 -} OH;

CH3 _{- OCH2CH2 - OCH2CH2 -} OH;

_CH3 - _{OCH2CH2 - OCH2CH2 - OCH2CH2 -} OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

_{CH3 - OCH2CH2CH2 -} OH;

_{CH3 - OCH2CH2CH2 - OCH2CH2CH2} - _{OH ;}

_{CH3 - OCH2CH2CH2 - OCH2CH2CH2 - OCH2CH2CH2 - OH ;}

_{CH3 - OCH2CH2CH2 - OCH2CH2CH2 - OCH2CH2CH2 - OCH2CH2CH2 - OH . _}

Particularly preferred glycol ether compounds are ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether or mixtures thereof.

The compound of chemical formula 1 used in the present invention contains 4 to 5 nitrogen atoms in total in the molecule, which also contains more nitrogen atoms than benzotriazole usually used as copper anticorrosion agent.

Excess nitrogen atoms contained in the compound increase the number of sites to bind to the metal surface and metal ions. If you observe the bond between benzotriazole and the copper surface, it shows that the nitrogen-intensive part is coordinated and bonded on the surface and the bonding structure is tilted, but the compound of chemical structure 1 contains the nitrogen atoms of the entire molecule, and it is bonded parallel to the surface, showing With a more stable combination structure, the same effect can be obtained with less addition.

In addition, benzotriazole compounds have an environmental problem that they are not degraded by microorganisms, but the compound of chemical structure 1 has the advantage of being biodegradable.

Generally, the compound of chemical structure formula 1 used among the present invention is purine, 6-aminopurine, 6-methoxypurine, 6-furfuryl aminopurine and uric acid, and the compound of particularly preferred chemical structure formula 1 is purine, 6-aminopurine Purines, uric acid, or mixtures thereof.

In the stripping solution composition, the deionized water in the composition of the present invention activates the organic amine compound, plays a role in strengthening the stripping ability of the photoresist, and acts on the hydroxyl group generated in the process of directly rinsing with water. The corrosion of the lower metal caused by it has a mitigating effect.

As the corrosion inhibitor in the composition of the present invention, compounds for neutralizing hydroxyl groups generated from amines, such as organic acid compounds or sugar alcohols, can be used. Examples of sugar alcohols include sorbitol, mannitol, threosol, xylitol and the like which are straight-chain polyols, and among them, sorbitol, mannitol, xylitol or mixtures thereof are particularly preferable.

For the sorbitol, mannitol, xylitol or their mixtures, the hydroxylated ions generated by the reaction of the organic amine and the hydrogen ion of water, at the contact surface between the photoresist layer and the substrate, It can effectively penetrate, form a chelating reaction with the metal substance contained in the polymer to improve the stripping ability, and form a lower metal layer, especially copper, aluminum, tungsten, molybdenum, chromium, titanium, ITO (oxidized The chelating reaction of indium tin) plays an anti-corrosion effect to prevent the hydroxyl group generated from the stripping solution composition from corroding the lower metal layer.

In addition, for the composition, in order to improve the uniformity of peeling, a surfactant can be used as an additive, and the amount of the additive is not limited, but the amount of the additive is 0.001% by weight to 10% by weight based on the whole composition, preferably 0.001% by weight to 5% by weight.

For the stripping composition of the present invention, in semiconductor manufacturing processes such as LSL elements, liquid crystal panels, etc., it has a Extremely low corrosion, especially suitable for the metal film quality of copper-containing multiple junction structures.

In order to obtain the peeling composition of the present invention, the above-mentioned compounds can be advantageously mixed in prescribed amounts, and the mixing method is not particularly limited, and various known methods can be applied.

Among other technical subjects of the present invention, the stripping method of the present invention can be preferably used when removing a photoresist degraded or cured in wet etching and dry etching steps.

The stripping method can be carried out by a stripping method generally known in the art, and good results can be obtained if the stripping solution is brought into contact with the substrate on which the photoresist film and the polymer are provided.

As the peeling method of the present invention, methods using a dipping method, a spray method, a single-sheet method, an air method, and the like are applied.

When using the dipping method, spraying method, single sheet method and pneumatic method for peeling, as the peeling condition, the temperature is about 10 to 100°C, preferably 20 to 80°C, and the dipping and spraying time is about 5 seconds to 30 minutes, preferably 10 minutes. Seconds to 10 minutes, but the stripping conditions in the present invention are not strict, and can be easily applied by different professionals.

The stripping composition of the present invention is excellent in the removal performance of the photoresist that has deteriorated or cured in the wet etching and dry etching steps, and is suitable for inorganic material substances such as metal films and oxide films that constitute semiconductor elements and liquid crystal display elements. Corrosion is extremely low, and as a result, it can be used in the peeling process of semiconductor elements such as LSL elements and liquid crystal panels.

Description of drawings

1 to 4 are diagrams for sequentially explaining an exposure step, an etching step, and a metal pattern formation step by a lift-off step.

FIG. 1 shows that a photoresist layer 30 is disposed on the surface of a substrate formed by sequentially stacking a semiconductor substrate or a glass substrate 10 , metal, inorganic material or an oxide film layer 20 .

Fig. 2 shows that through a mask formed with a predetermined pattern, the pattern on the surface of the photoresist film is irradiated with high-energy active rays such as ultraviolet rays, electron beams, or X-rays to form the pattern. After the latent image is developed, it is developed with a developer to form a photoresist pattern.

FIG. 3 shows that after patterning is performed by performing wet etching and dry etching on the patterned portion, as shown in FIG. 4 , the photoresist remaining after patterning is removed with a stripping solution.

Symbol Description

10 Semiconductor substrate or glass substrate

20 metal, inorganic material or oxide film layer

30 photoresist layer

Detailed ways

Example

Below, describe the present invention in more detail with reference to the following examples, but the present invention is not limited to this

Example.

Under the treatment conditions described in Table 2, the substrate was immersed in a stripping solution made of the compounds shown in Table 1, rinsed with deionized water, and scanned with a scanning electron microscope (SEM) (Hitachi, S-4700 ) Observation results. The peeling ability to the photoresist film, the corrosion protection ability to the metal layer and the lower layer were evaluated, and are shown in Table 2. The evaluation criteria of SEM are as follows.

[Peel Ability]

◎: good

△: Normal

×: Bad

[Anti-corrosion ability]

◎: good

△: Normal

×: Bad

Table 1a Organic amine compound Glycol ether compounds Compound of chemical formula 1 anti-corrosion agent Deionized water 1 TMAH (5%) - - margin 2 MEA (10%) EG (90%) - - - 3 MEA (10%) PG (90%) - - - 4 MEA (10%) TEG (90%) - - - 5 MIPA (10%) BDG (90%) - - - 6 MIPA (10%) BDG (50%) - - margin 7 MIPA (10%) BDG (30%) - Catechol (1%) margin 8 MIPA (10%) BDG (30%) Purine (0.05%) - margin 9 MIPA (10%) BDG (30%) - Catechol (1%) margin 10 MIPA (10%) BDG (30%) - Catechol (1%) + Susol (1%) margin 11 MIPA (10%) BDG (50%) - BTA (1%) margin 12 MIPA (10%) BDG (30%) - BTA (1%) + Su Sol (1%) margin 13 MEA (20%) BDG (30%) Purine (0.05%) Su Sol (1%) margin

Table 1b Organic amine compound Glycol ether compound Compound of chemical formula 1 anti-corrosion agent Deionized water 14 MEA (20%) BDG (50%) Purine (0.05%) Su Sol (1%) margin 15 MIPA (10%) BDG (10%) 6-methoxypurine (0.01%) Sorbitol (1%) margin 16 MIPA (10%) EGB (20%) 6-Furfurylaminopurine (0.01%) Xylitol (2%) margin 17 MIPA (10%) TEGB (30%) Uric acid (0.1%) Mannitol (5%) margin 18 MEA (30%) TEGB (30%) Purines (0.5%) Mannitol (5%) margin 19 MEA (30%) BDG (30%) 6-aminopurine (0.05%) Su Sol (1%) margin 20 MEA (10%) BDG (50%) Purine (0.1%) Sorbitol (1%) margin twenty one MEA (20%) BDG (10%) Purines (0.5%) Sorbitol (1%) margin twenty two MEA (30%) EGB (20%) Aminopurine (0.5%) Xylitol (2%) margin twenty three MEA (30%) TEGB (30%) Purines (0.5%) Mannitol (5%) margin twenty four MIPA (30%) BDG (30%) 6-aminopurine (0.5%) Xylitol (1%) margin

Note) TMAH: Tetramethylammonium hydroxide

MEA: monoethanolamine

MIPA: Isopropanolamine

BDG: Diethylene glycol monobutyl ether

EGB: Ethylene glycol monobutyl ether

TEGB: triethylene glycol monobutyl ether

EG: ethylene glycol

PG: Propylene Glycol

TEG: triethylene glycol

BTA: Benzotriazole

Table 2a processing conditions Stripping ability Corrosion resistance temperature(℃) time (minutes) Cu Multiple bonding metal layers 1 40 10 ◎ x x 2 40 10 △ x x 3 40 10 △ x x 4 40 10 △ x x 5 40 10 △ x x 6 40 10 △ x x 7 40 10 ◎ x △ 8 40 10 △ ◎ △ 9 40 10 △ x △ 10 40 10 ◎ x △ 11 40 10 △ △ △ 12 40 10 ◎ △ △ 13 40 10 ◎ ◎ ◎

Table 2b processing conditions Stripping ability Corrosion resistance temperature(℃) time (minutes) Cu Multiple bonding metal layers 14 40 10 ◎ ◎ ◎ 15 40 10 ◎ ◎ ◎ 16 40 10 ◎ ◎～△ ◎ 17 40 10 ◎ ◎ ◎ 18 40 10 ◎ ◎ ◎ 19 40 10 ◎ ◎ ◎ 20 40 10 ◎ ◎ ◎ twenty one 40 10 ◎ ◎ ◎ twenty two 40 10 ◎ ◎ ◎ twenty three 40 10 ◎ ◎ ◎ twenty four 40 10 ◎ ◎ ◎ room temperature 10 ◎ ◎ ◎

Invention effect

According to the photoresist stripping solution of the present invention, for the photoresist that deteriorates or solidifies in the wet etching or dry etching process, it can be removed at a low temperature by dipping method, spray method, monolithic method or pneumatic method. , It can be easily stripped in a short time, and has extremely low corrosion resistance to substances such as copper, aluminum, tungsten, molybdenum, chromium, titanium, and ITO metal films exposed to the stripping solution, especially for metals with copper-containing multiple junction structures The film quality has excellent corrosion resistance. When the photoresist stripping solution of the present invention is used, it is not necessary to use an organic solvent such as isopropyl alcohol or dimethyl sulfoxide in the subsequent rinsing step, and rinsing can be performed using only water. In addition, it is possible to provide an environmentally friendly photoresist stripping solution using a biodegradable organic solvent without adding an alkylpyrrolidone compound, a sulfone compound, a sulfoxide compound, or a benzotriazole compound.

Claims (12)

1, photoresist remover composition, it is characterized in that, the total amount of relative composition, it contains the compound, anticorrosive and the balance of deionized water of 0.1 weight %～10 weight % of following chemical structural formula 1 of glycol ether compound, the 0.01 weight %～1 weight % of organic amine compound, the 5 weight %～50 weight % of 5 weight %～50 weight %

Chemical structural formula 1

In the formula, X is C or N, and at least one is N, wherein, and R ⁴, R ⁵Be hydrogen atom, alkyl, aryl, amino, heterocycle, carbonyl, OH or OR base, R represents alkyl or aryl respectively.

2, photoresist remover composition according to claim 1, it is characterized in that described organic amine compound is monoethanolamine, diethanolamine, triethanolamine, Propanolamine, dipropanolamine, tripropanol amine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine, N-methylethanolamine, ethyldiethanolamine or their potpourri.

3, photoresist remover composition according to claim 2 is characterized in that, described organic amine compound is monoethanolamine, N-methylethanolamine, isopropanolamine or their potpourri.

4, photoresist remover composition according to claim 1 is characterized in that, described glycol ether compound is ethylene glycol monobutyl ether (EGMBE), butylcarbitol, triethylene glycol monobutyl ether or their potpourri.

5, photoresist remover composition according to claim 1 is characterized in that, the compound of described chemical structural formula 1 is purine, adenine, 6-methoxyl purine, 6-chaff adenine phosphate, urea acid or their potpourri.

6, photoresist remover composition according to claim 5 is characterized in that, the compound of described chemical structural formula 1 is purine, adenine, urea acid or their potpourri.

7, photoresist remover composition according to claim 1 is characterized in that, described anticorrosive is the straight chain polyvalent alcohol.

8, photoresist remover composition according to claim 7 is characterized in that, described straight chain polyvalent alcohol is D-sorbite, sweet mellow wine, Soviet Union's colloidal sol, xylitol or their potpourri.

9, photoresist remover composition according to claim 1 is characterized in that, described composition contains surfactant as adjuvant.

10, photoresist remover composition according to claim 1 is characterized in that, the content of described deionized water is 30 weight %～70 weight %.

11, according to each the described photoresist remover composition in the claim 1～10, it is characterized in that it takes place to use when photoresist rotten or that solidify is peeled off in the wet etching of the substrate that will be formed by metal wiring and inorganic material layer or dry ecthing operation.

12, photoresist remover composition according to claim 11 is characterized in that, the metal wiring that is exposed in the remover composition is the metal wiring of the single or multiple connected structure of cupric.

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