CN1706026A - 具有边缘遮蔽和气体清除的静电卡盘晶片端口和顶板 - Google Patents

具有边缘遮蔽和气体清除的静电卡盘晶片端口和顶板 Download PDF

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Publication number
CN1706026A
CN1706026A CNA2003801018854A CN200380101885A CN1706026A CN 1706026 A CN1706026 A CN 1706026A CN A2003801018854 A CNA2003801018854 A CN A2003801018854A CN 200380101885 A CN200380101885 A CN 200380101885A CN 1706026 A CN1706026 A CN 1706026A
Authority
CN
China
Prior art keywords
equipment
wafer
gas
electrostatic chuck
top board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2003801018854A
Other languages
English (en)
Chinese (zh)
Inventor
P·L·凯勒曼
K·T·赖安
R·J·米切尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of CN1706026A publication Critical patent/CN1706026A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNA2003801018854A 2002-10-23 2003-10-22 具有边缘遮蔽和气体清除的静电卡盘晶片端口和顶板 Pending CN1706026A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/278,640 US20040079289A1 (en) 2002-10-23 2002-10-23 Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging
US10/278,640 2002-10-23

Publications (1)

Publication Number Publication Date
CN1706026A true CN1706026A (zh) 2005-12-07

Family

ID=32106584

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2003801018854A Pending CN1706026A (zh) 2002-10-23 2003-10-22 具有边缘遮蔽和气体清除的静电卡盘晶片端口和顶板

Country Status (8)

Country Link
US (1) US20040079289A1 (fr)
EP (1) EP1556884A2 (fr)
JP (1) JP2006504239A (fr)
KR (1) KR20050051713A (fr)
CN (1) CN1706026A (fr)
AU (1) AU2003274407A1 (fr)
TW (1) TW200409274A (fr)
WO (1) WO2004038766A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959600A (zh) * 2022-05-31 2022-08-30 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7633305B2 (en) * 2004-09-13 2009-12-15 Shin-Etsu Handotai Co., Ltd. Method for evaluating semiconductor wafer and apparatus for evaluating semiconductor wafer
EP1993128A3 (fr) * 2007-05-17 2010-03-24 Semiconductor Energy Laboratory Co., Ltd. Procédé de fabrication d'un substrat SOI
US20090084988A1 (en) * 2007-09-27 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Single wafer implanter for silicon-on-insulator wafer fabrication
WO2020068254A1 (fr) * 2018-09-25 2020-04-02 Applied Materials, Inc. Procédés et appareil pour éliminer une courbure de tranche pour des systèmes hvm de dépôt chimique en phase vapeur (cvd) et de formation de motifs
US11670483B2 (en) * 2019-05-01 2023-06-06 Axcelis Technologies, Inc. High power wafer cooling
JP7671771B2 (ja) * 2020-03-02 2025-05-02 ラム リサーチ コーポレーション 半導体ファブツール用の台座プレートを含む台座、および台座プレートを配向させるための方法

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US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4599135A (en) * 1983-09-30 1986-07-08 Hitachi, Ltd. Thin film deposition
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
JPH0555145A (ja) * 1991-08-27 1993-03-05 Hitachi Ltd 基板加熱装置
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5310453A (en) * 1992-02-13 1994-05-10 Tokyo Electron Yamanashi Limited Plasma process method using an electrostatic chuck
US5436790A (en) * 1993-01-15 1995-07-25 Eaton Corporation Wafer sensing and clamping monitor
US5535507A (en) * 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
TW357404B (en) * 1993-12-24 1999-05-01 Tokyo Electron Ltd Apparatus and method for processing of plasma
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5885428A (en) * 1996-12-04 1999-03-23 Applied Materials, Inc. Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US5922133A (en) * 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US6120607A (en) * 1998-12-03 2000-09-19 Lsi Logic Corporation Apparatus and method for blocking the deposition of oxide on a wafer
US6373679B1 (en) * 1999-07-02 2002-04-16 Cypress Semiconductor Corp. Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
JP5165817B2 (ja) * 2000-03-31 2013-03-21 ラム リサーチ コーポレーション 静電チャック及びその製造方法
JP3758979B2 (ja) * 2001-02-27 2006-03-22 京セラ株式会社 静電チャック及び処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959600A (zh) * 2022-05-31 2022-08-30 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备
CN114959600B (zh) * 2022-05-31 2023-08-18 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备

Also Published As

Publication number Publication date
WO2004038766A3 (fr) 2004-07-22
US20040079289A1 (en) 2004-04-29
WO2004038766A2 (fr) 2004-05-06
EP1556884A2 (fr) 2005-07-27
TW200409274A (en) 2004-06-01
KR20050051713A (ko) 2005-06-01
JP2006504239A (ja) 2006-02-02
AU2003274407A1 (en) 2004-05-13

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SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication