CN1877861B - 半导体器件及其用途 - Google Patents

半导体器件及其用途 Download PDF

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Publication number
CN1877861B
CN1877861B CN200610101412XA CN200610101412A CN1877861B CN 1877861 B CN1877861 B CN 1877861B CN 200610101412X A CN200610101412X A CN 200610101412XA CN 200610101412 A CN200610101412 A CN 200610101412A CN 1877861 B CN1877861 B CN 1877861B
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CN
China
Prior art keywords
region
channel formation
crystalline silicon
silicon film
formation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200610101412XA
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English (en)
Chinese (zh)
Other versions
CN1877861A (zh
Inventor
山崎舜平
大谷久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12308897A external-priority patent/JP3980117B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1877861A publication Critical patent/CN1877861A/zh
Application granted granted Critical
Publication of CN1877861B publication Critical patent/CN1877861B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
CN200610101412XA 1997-01-20 1998-01-20 半导体器件及其用途 Expired - Fee Related CN1877861B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP02207797A JP3753827B2 (ja) 1997-01-20 1997-01-20 半導体装置の作製方法
JP22077/1997 1997-01-20
JP12308897A JP3980117B2 (ja) 1997-04-26 1997-04-26 半導体装置の作製方法
JP123088/1997 1997-04-26

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
CNB98105837XA Division CN1173412C (zh) 1997-01-20 1998-01-20 半导体器件
CNB2004100642546A Division CN100377363C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

Publications (2)

Publication Number Publication Date
CN1877861A CN1877861A (zh) 2006-12-13
CN1877861B true CN1877861B (zh) 2010-05-12

Family

ID=12072834

Family Applications (3)

Application Number Title Priority Date Filing Date
CN200610101412XA Expired - Fee Related CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途
CNB2006101014083A Expired - Fee Related CN100505309C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CNB2006101007978A Expired - Fee Related CN100470739C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

Family Applications After (2)

Application Number Title Priority Date Filing Date
CNB2006101014083A Expired - Fee Related CN100505309C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CNB2006101007978A Expired - Fee Related CN100470739C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

Country Status (2)

Country Link
JP (1) JP3753827B2 (th)
CN (3) CN1877861B (th)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3846057B2 (ja) * 1998-09-03 2006-11-15 セイコーエプソン株式会社 電気光学装置の駆動回路及び電気光学装置並びに電子機器
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7317438B2 (en) 1998-10-30 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6506635B1 (en) 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
JP4823543B2 (ja) * 2004-03-26 2011-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102268217B1 (ko) 2010-03-05 2021-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN105576037B (zh) * 2016-01-08 2018-11-13 京东方科技集团股份有限公司 薄膜晶体管及其制作和测试方法、阵列基板和显示装置
US20190229173A1 (en) * 2018-01-23 2019-07-25 Int Tech Co., Ltd. Light emitting device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
US5572211A (en) * 1994-01-18 1996-11-05 Vivid Semiconductor, Inc. Integrated circuit for driving liquid crystal display using multi-level D/A converter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572211A (en) * 1994-01-18 1996-11-05 Vivid Semiconductor, Inc. Integrated circuit for driving liquid crystal display using multi-level D/A converter
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平8-288515A 1996.11.01

Also Published As

Publication number Publication date
JPH10209465A (ja) 1998-08-07
CN1921149A (zh) 2007-02-28
CN100470739C (zh) 2009-03-18
CN1877861A (zh) 2006-12-13
CN1897233A (zh) 2007-01-17
CN100505309C (zh) 2009-06-24
JP3753827B2 (ja) 2006-03-08

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