CN1925110A - Vacuum treatment device - Google Patents

Abstract

The invention provides a vacuum processing apparatus which can reliably prevent water from mixing into a vacuum processing chamber. Gate valves (30a, 30b) having valve bodies (31a, 31b) are disposed in two layers between the vacuum processing chamber (10) and the load lock chamber (20). Three exhaust pipes (21, 22, 23) having different flow conductance are connected to the load lock chamber (20), and are connected to a vacuum pump (60) through opening/closing valves (62, 63, 64). In addition, N is introduced₂N of gas₂A gas supply source (26) is connected to the interior of the load lock chamber (20).

Description

Vacuum treatment device

technical field

The present invention relates to vacuum processing technology, and in particular, to a vacuum processing device that can perform vacuum processing such as dry etching on glass substrates for FPDs (flat panel displays) typified by liquid crystal displays (LCDs) and plasma displays. technology used.

Background technique

For example, in the LCD manufacturing process, dry etching or sputtering, CVD (Chemical Vapor Growth) and other vacuum treatments are often used on the LCD glass as the substrate to be processed.

In the vacuum processing apparatus for performing such vacuum processing, a vacuum preparation chamber adjacent to the vacuum processing chamber (processing module) that maintains the vacuum and performs the above-mentioned processing is provided, so that when the substrate to be processed is carried in and out, the atmosphere in the vacuum processing chamber Little change.

Specifically, for example, a load-lock chamber having an interface function between the atmosphere side and the vacuum side is provided as a vacuum preparation chamber between a cassette arranged on the atmosphere side and a vacuum processing chamber where etching is performed.

In this load-lock chamber, each time a substrate to be processed passes through, the air-opening state and the evacuation to achieve the same high vacuum as the vacuum processing chamber are repeated. Thus, a gate valve is disposed between the load-lock chamber and the vacuum processing chamber that is always maintained in a vacuum state to ensure the sealing of both chambers (for example, Patent Document 1).

However, when the sealing performance of the gate valve is insufficient, moisture in the atmosphere leaks from the load-lock chamber side in the atmosphere-open state into the vacuum processing chamber in the high-vacuum state. When moisture is mixed into the vacuum processing chamber, even a small amount, it will have an adverse effect on vacuum processing such as etching or film formation, and may reduce the reliability of products such as FPDs manufactured.

In addition, as a conventional gate valve structure, it has been proposed to arrange a pair of valve bodies on both sides of the movable body to seal the openings of the respective chambers in order to ensure the sealing performance of the vacuum processing chamber and the vacuum chamber for loading and unloading (load lock chamber). gate valve (for example, Patent Document 2). However, in the gate valve of Patent Document 2, each valve body is moved in opposite directions from the above-mentioned movable body to both the opening of the vacuum chamber for loading and unloading on the atmospheric side and the opening of the vacuum processing chamber, and is simultaneously sealed. With the structure of both openings, the valve body on the side of the vacuum chamber for loading and unloading is pressed in the direction opposite to the direction of the differential pressure from the high pressure side to the low pressure side, so the airtightness of this part cannot be ensured sufficiently.

[Patent Document 1] Japanese Unexamined Patent Publication No. 2005-12185 (FIG. 3 etc.).

[Patent Document 2] Japanese Patent Application Laid-Open No. 5-99348 (FIG. 1 etc.).

As described above, if the airtightness of the load lock chamber and the vacuum processing chamber cannot be sufficiently secured, air containing moisture may be mixed into the vacuum processing chamber from the load lock chamber side, which may adversely affect the processing of the substrate to be processed.

In addition, even if the airtightness of the gate valve can be ensured, since the load lock chamber is repeatedly open to the atmosphere, when moisture contained in the atmosphere remains in the load lock chamber after exhaust, and the gate valve is opened to allow the substrate to be processed to pass through, the remaining moisture will Move to a vacuum chamber. In particular, in the case of high-speed exhaust in the load lock chamber, as the pressure decreases sharply, moisture in the atmosphere is atomized and easily adheres and remains inside the load lock chamber, and this moisture easily passes through the gate opening. into the vacuum chamber.

Contents of the invention

The present invention has been made in consideration of the above problems, and an object of the present invention is to provide a vacuum processing apparatus capable of reliably preventing moisture from entering a vacuum processing chamber.

That is, the first object is to provide a gate valve capable of sufficiently ensuring the airtightness between the load lock chamber and the vacuum processing chamber. The second object is to provide a technology capable of preventing moisture from remaining or atomizing during the process of exhausting the load lock chamber.

In order to solve the above problems, the first aspect of the present invention provides a vacuum processing device, which is characterized in that:

Vacuum processing chambers for the prescribed processing of substrates in vacuum;

In the process of carrying the substrate into and out of the vacuum processing chamber, the substrate is temporarily accommodated, and the inside of the vacuum preparation chamber is alternately kept in an atmosphere-open state and a vacuum state; and

The gate valve is double-positioned between the above-mentioned vacuum processing chamber and the above-mentioned vacuum preparation chamber.

According to the above-mentioned first point of view, since the gate valve is double-disposed between the vacuum processing chamber and the vacuum preparation chamber, the vacuum preparation chamber and the vacuum processing chamber can be reliably isolated in the state of closing the gate valve, and the water can be reduced as much as possible from repeated to atmospheric state. And the vacuum preparation chamber in high vacuum state is mixed into the vacuum processing chamber.

In the above-mentioned first point of view, preferably also have:

a first gate valve opening and closing an opening formed in the above-mentioned vacuum processing chamber; and

A second gate valve is disposed adjacent to the first gate valve and opens and closes an opening formed between the first gate valve.

Moreover, it is preferable that the said 1st gate valve and the said 2nd gate valve are opened and closed synchronously.

In addition, it is preferable that when the first gate valve and the second gate valve are sealed, the valve body is pressed from the side of the relatively high-pressure vacuum preparation chamber to the side of the low-pressure vacuum processing chamber. In this way, since the valve body of each gate valve is pressed in the direction of differential pressure, that is, from the vacuum preparation chamber on the atmospheric pressure side to the vacuum processing chamber on the vacuum side, it can be reliably sealed.

In addition, it is preferable that an exhaust pipe for depressurizing and exhausting the inside of the lock container is connected to the above-mentioned first gate valve.

Thus, even if the vacuum preparation chamber is open to the atmosphere, the valve container of the first gate valve that decompresses the pressure to a predetermined pressure is present between the vacuum processing chambers, and the flow of air from the vacuum preparation chamber to the vacuum processing chamber can be more reliably prevented. Leakage prevents moisture from entering the vacuum process chamber.

In addition, it is preferable that a plurality of exhaust pipes having different channel conductances are connected to the above-mentioned vacuum preparation chamber.

Furthermore, it is preferable that a purge gas supply source for introducing purge gas is connected to the above-mentioned vacuum preparation chamber.

The second aspect of the present invention provides a vacuum processing device, characterized in that it has:

Vacuum processing chambers for the prescribed processing of substrates in vacuum;

In the process of carrying the above-mentioned substrate into and out of the above-mentioned vacuum processing chamber, the above-mentioned substrate is temporarily accommodated, and the vacuum preparation chamber is kept alternately in an open state of the atmosphere and in a vacuum state;

A plurality of exhaust pipes having different flow conductances connected to the above-mentioned vacuum preparation chamber; and

An exhaust unit that is connected to the exhaust pipe to vacuum exhaust the vacuum preparation chamber.

In the above-mentioned second viewpoint, it is preferable that the above-mentioned plurality of exhaust pipes have:

first exhaust pipe;

a second exhaust pipe having a flow path conductance greater than that of the first exhaust pipe; and

A third exhaust pipe having a flow conductance larger than that of the second exhaust pipe.

In the vacuum processing apparatus according to the above-mentioned second aspect, by arranging exhaust pipes with different flow paths, it is possible to configure a plurality of patterns of exhaust paths combining these exhaust pipes. In the process of exhausting the vacuum preparation chamber, by switching the exhaust path, it is possible to prevent the atomization of moisture caused by the sharp drop in pressure.

In addition, the third aspect of the present invention provides a method for exhausting a vacuum preparation chamber, which is characterized in that the vacuum preparation chamber is exhausted to the vacuum state, and the vacuum preparation chamber is carried out during the process of moving the substrate into and out of the vacuum processing chamber. , to store the substrate temporarily, while maintaining the atmosphere open state and vacuum state alternately inside;

Exhaust is carried out by switching the exhaust speed and increasing the exhaust speed step by step using a plurality of exhaust pipes with different flow conductances connected to the above-mentioned vacuum preparation chamber.

In the above-mentioned third viewpoint, when the vacuum preparation chamber is exhausted to a vacuum state, the exhaust velocity is switched by using a plurality of exhaust pipes with different flow conductances, and the exhaust velocity is increased step by step to perform exhaust. , can prevent moisture atomization as the pressure in the vacuum preparation chamber drops sharply.

In the above-mentioned third viewpoint, it is preferable that the switching of the exhaust speed is performed based on the pressure in the vacuum preparation chamber. In addition, it is preferable that the exhaust gas is continued at the stage of depressurizing the vacuum preparation chamber to a predetermined pressure, and a purge gas is introduced into the vacuum preparation chamber for a predetermined time.

The fourth aspect of the present invention provides a method for exhausting a vacuum preparation chamber, characterized in that the vacuum preparation chamber is exhausted to the vacuum state, and the vacuum preparation chamber is carried in and out of the vacuum processing chamber, The substrate is temporarily stored, while the interior is alternately kept open to the atmosphere and vacuumed,

In the stage of depressurizing the above-mentioned vacuum preparation chamber to a predetermined pressure, the exhaust gas is continued, and a purge gas is introduced into the vacuum preparation chamber at a predetermined time.

According to the above-mentioned fourth viewpoint, by introducing the purge gas, the atmosphere in the vacuum preparation chamber under reduced pressure can be replaced with the purge gas. Thereby, moisture remaining in the vacuum preparation chamber can be reliably removed.

In addition, the fifth viewpoint of the present invention provides a method for boosting the pressure of a vacuum preparation chamber, which is characterized in that the pressure of the vacuum preparation chamber is increased from the above-mentioned vacuum state, and the vacuum preparation chamber is carried in and out of the vacuum processing chamber. The substrate is temporarily stored, while the interior is alternately kept open to the atmosphere and vacuumed,

When opening the vacuum preparation chamber to the atmosphere, a predetermined flow rate of purge gas is introduced to make the vacuum preparation chamber a positive pressure in a state of being released to the atmosphere.

According to the above-mentioned fifth viewpoint, by introducing a predetermined flow rate of purge gas into the vacuum preparation chamber while being open to the atmosphere to make the interior a positive pressure, the entry of air from the clean chamber can be suppressed, and moisture or particles can be prevented from entering the vacuum preparation chamber.

By adopting the present invention, it is possible to minimize the mixing of moisture into the vacuum processing chamber from the vacuum preparation chamber which is repeatedly in the atmospheric state and the high vacuum state.

Description of drawings

FIG. 1 is a perspective view showing the appearance of a vacuum processing apparatus according to one embodiment of the present invention.

2 is a horizontal cross-sectional view showing a vacuum preparation chamber and a vacuum processing chamber of the vacuum processing apparatus of FIG. 1 .

Fig. 3 is a schematic cross-sectional view showing an open state of the gate valve.

Fig. 4 is a schematic cross-sectional view showing a closed state of the gate valve.

FIG. 5 is a diagram showing an outline of a gas discharge system and a gas introduction system of a load lock chamber.

Fig. 6 is a flow chart showing the exhaust sequence of the load lock chamber.

Symbol Description

10 vacuum processing chamber; 20 load lock chamber; 21, 22, 23 exhaust pipe; 24 N ₂ gas supply pipeline; 26N ₂ gas supply source; 27 exhaust pipe; 30a, 30b, 40 gate valve; 50 atmospheric side transfer mechanism ; 60 vacuum pump; 70 substrate transfer device; 74 slide plate (slide plate); 74a slide picker (slide pick); 80 substrate exchange mechanism;

Detailed ways

Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.

1 is a perspective view showing a schematic configuration of a vacuum processing apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a horizontal cross-sectional view showing main parts of the vacuum processing apparatus 100 of FIG. 1 . The vacuum processing apparatus 100 has a vacuum processing chamber 10 for performing desired vacuum processing such as plasma etching processing or thin film forming processing in a vacuum atmosphere on a substrate G such as a transparent LCD glass substrate; Load lock chamber 20 serving as a vacuum preparation chamber; gate valves 30a, 30b double-installed between vacuum processing chamber 10 and load lock chamber 20;

As shown in FIG. 2 , a vacuum pump 60 as an exhaust unit is connected to the vacuum processing chamber 10 through an exhaust control valve 61 , and exhausts to a vacuum degree necessary for predetermined vacuum processing of the substrate G. Furthermore, the processing gas supply unit 12 is connected to the vacuum processing chamber 10 through the gas control valve 11 , and can form a processing gas atmosphere at a predetermined pressure inside the vacuum processing chamber 10 . Inside the vacuum processing chamber 10, a processing table 13 is provided, on which a substrate G to be processed is placed.

Three exhaust pipes 21 , 22 , 23 with different conductances are connected to the load lock chamber 20 , and on-off valves 62 , 63 , 64 are arranged in the middle of the respective exhaust pipes 21 , 22 , 23 . Each exhaust pipe 21 , 22 , 23 is connected to a vacuum pump 60 , and can exhaust the load lock chamber 20 to a vacuum degree equal to that of the vacuum processing chamber 10 .

An N ₂ gas supply source 26 for introducing N ₂ gas as purge gas is connected to the load lock chamber 20 through a gas control valve 25 so that N ₂ gas can be introduced into the load lock chamber 20 .

As shown in the figure, in the vacuum processing apparatus of the present embodiment, gate valves 30 a and 30 b are double-arranged between the vacuum processing chamber 10 and the load lock chamber 20 . The gate valve 30a has a valve body 31a that communicates with the vacuum processing chamber 10 and the load lock chamber 20, and performs opening and closing operations through an opening 90 (see FIG. 3, described later) of a size that can pass through the substrate G. In addition, similarly, the gate valve 30 b also has an opening 94 (see FIG. 3 , described later) having a size that allows the passage of the substrate G supported by the substrate transfer device 70 to communicate with the vacuum processing chamber 10 and the load lock chamber 20 . The valve body 31b. Among them, FIG. 2 shows a state where both gate valves 30a and 30b are closed.

In addition, the exhaust pipe 27 is arranged on the gate valve 30 a arranged on the vacuum processing chamber 10 side. The exhaust pipe 27 is connected to a vacuum pump 60, and an exhaust control valve 65 is arranged therein. By providing the exhaust pipe 27, the gas in the valve housing 95a of the gate valve 30a can be exhausted and decompressed to a predetermined pressure while the gate valves 30a and 30b are closed. Thus, by connecting the exhaust unit to the gate valve 30a, even when the gate valves 30a, 30b are closed to open the load lock chamber 20 to the atmosphere, the inside of the valve frame 95a can be released between the vacuum processing chambers 10. The entire gate valve 30 a is in a decompressed state, so air leakage from the load lock chamber 20 to the vacuum processing chamber 10 can be prevented more reliably, and moisture can be prevented from being mixed into the vacuum processing chamber 10 .

The gate valve 40 is provided with an opening 41 that communicates the load lock chamber 20 with the outside atmosphere side and has a size such that the substrate G supported by the atmosphere side transfer mechanism 50 can pass through; 42.

A substrate transfer device 70 is provided inside the load lock chamber 20 . This substrate transfer device 70 has a base (not shown) fixed to the bottom of the load lock chamber 20 , and a slide plate 74 stacked on the base as a substrate support table on which the substrate G is placed. On the slide plate 74, a substantially U-shaped slide picker (slide pick) portion 74a that supports the lower surface of the placed substrate G is provided.

The substrate transfer device 70 operates a drive motor not shown to move the slide plate 74 in the state where the substrate G is placed from the retracted state shown in FIG. The substrate G on the picker unit 74 a is carried into the vacuum processing chamber 10 from the load lock chamber 20 . In addition, conversely, in the case of unloading the substrate G from the vacuum processing chamber 10, after the substrate G is received in the vacuum processing chamber 10 by the slide picker part 74a, the driving motor (not shown) is reversed, so that it can be as shown in FIG. 2 . The retracted state is shown.

Inside the load lock chamber 20, buffer plates 81 and 82 are provided at positions sandwiching the substrate transfer device 70, and the substrate exchange mechanism 80 having a buffer lift mechanism (not shown) for lifting and lowering the buffer plates 81 and 82 can be used. The peripheral portion of the substrate G placed on the slide plate 74 of the substrate transfer device 70 is supported from below by the buffer plates 81 and 82, and the operation of floating the substrate G from the slide plate 74 and the substrate received from the atmosphere side transfer mechanism 50 are performed. Substrate replacement operations such as the operation of G descending onto the slide plate 74 .

Referring to FIG. 1, it can be seen that the transport mechanism 50 on the atmospheric side has a transport arm 51 that can be rotated and stretched, and can perform the following actions: take out an unprocessed substrate from a substrate rack 55 that accommodates a plurality of substrates G, and transport it through the gate valve 40 to The operation of the substrate transfer device 70 in the load lock chamber 20;

The cross-sectional structure of gate valve 30a, 30b is shown in FIG.3 and FIG.4.

The gate valve 30 a can open and close the substrate loading and unloading port 90 provided on the side wall 10 a of the vacuum processing chamber 10 from the side of the load lock chamber 20 . The gate valve 30a has a laterally long valve body 31a formed so as to close the opening 90 for loading and unloading the substrate G in a horizontal posture, and a horizontally long valve body 34a that supports the valve body 31a by a pair of cranks 32a and 33a and is movable up and down. .

The valve body 34a is connected to the piston rod 36a of the air cylinder 35a, and is slidably guided by a vertically arranged guide rail 37a. That is: when the cylinder 35a is operated to lift the piston rod 36a up and down, the valve body 34a is guided by the guide rail 37a and can move up and down in the vertical direction.

The cranks 32a, 33a are respectively bridged between the left side of the valve body 34a and the left side of the valve body 31a, and between the right side of the valve body 34a and the right side of the valve body 31a. (in Fig. 3 and Fig. 4 only show the crank 32a, 33a on the right side). Moreover, the roller 38a for avoiding friction with the top part 91a is attached to the upper surface of the valve body 31a.

The gate valve 30b is disposed between the gate valve 30a and the load lock chamber 20, and opens and closes an opening 94 formed in a partition wall 92 that separates the gate valve 30a from the gate valve 30b. However, in FIGS. 3 and 4 , reference numeral 93 denotes an opening provided on the side wall of the load lock chamber 20 for loading and unloading the substrate G. As shown in FIG.

The gate valve 30b has a laterally long valve body 31b formed to close the opening 94 through which the substrate G can be loaded and unloaded in a horizontal posture, and a horizontally long valve body 34b that is supported by a pair of cranks 32b and 33b to move up and down the valve body 31b. .

The valve body 34b is connected to the piston rod 36b of the air cylinder 35b, and is slidably guided by a vertically arranged guide rail 37b. That is: when the cylinder 35b is operated to lift the piston rod 36b up and down, the valve body 34b is guided by the guide rail 37b and can move up and down in the vertical direction.

Cranks 32b, 33b are bridged between the left side of valve body 34b and the left side of valve body 31b respectively, and between the right side of valve body 34b and the right side of valve body 31b (wherein, in Fig. 3 and Only the cranks 32b, 33b) on the right side are shown in FIG. 4 . Moreover, the roller 38b for avoiding friction with the top part 91b is attached to the upper surface of the valve body 31b.

Working air is equally distributed to the cylinders 35a and 35b from a working air supply source not shown, and the driving force of the cylinder 35a is transmitted to the piston rod 36a, and the driving force of the cylinder 35b is transmitted to the piston rod 36b. Accordingly, the valve bodies 31a, 31b of the gate valves 30a, 30b are synchronized to seal or unseal the opening 90 and the opening 94, respectively. As shown in FIG. 3, when the gate valves 30a, 30b are opened, the valve bodies 31a, 31b are in a standby position lower than the openings 90, 94, and the valve bodies 34a, 34b are in a standby position lower than the valve bodies 31a, 31b.

When the gate valves 30a, 30b are closed, the air cylinders 35a, 35b are operated from the state shown in Fig. 3, and the piston rods 36a, 36b are advanced by a predetermined stroke. As shown in Figure 4 again, the valve body 34a, 34b and the valve body 31a, 31b vertically rise from the original position respectively parallel to each other, and the rollers 38a, 38b of the valve body 31a, 31b contact the top surface 91a, 91b. The bodies 34a, 34b are in contact with stoppers 39a, 39b.

In addition, the cranks 32a, 33a and cranks 32b, 33b operate to press the valve bodies 31a, 31b toward the openings 90, 94, and press into the periphery of the opening 90 (side wall 10a) and the periphery of the opening 94 (partition wall 92). During this action, the rollers 38a, 38b rotate horizontally on the top surfaces 91a, 91b, and the valve bodies 31a, 31b move horizontally, pressing against the walls around the openings 90, 94 in the lateral direction. Since seals (not shown) such as O-rings are installed around the openings 90, 94, the valve bodies 31a, 31b have high sealing performance, and can seal the openings 90, 94 by pressing the surroundings of the openings 90, 94.

When the gate valves 30a, 30b are opened from the closed state of Fig. 4, the cylinders 35a, 35b are operated, and the piston rods 36a, 36b are lowered by the same stroke as when reciprocating, and the valve body 34a, 34b and the valve bodies 31a, 31b respectively return to the original standby positions, and the seals of the openings 90, 94 are released.

Among them, using the gate valves 30a, 30b shown in Fig. 3 and Fig. 4, the working air of a system can be equally distributed to the cylinders 35a, 35b, and the gate valves 30a, 30b can be operated at the same time, or they can be separately installed on the cylinders 35a, 35b. A working air supply source is provided, and the working air is supplied to operate the gate valves 30a and 30b at regular time intervals.

Next, the processing procedure of the substrate G in the vacuum processing apparatus 100 of this embodiment will be described. First, the substrate transfer device 70 retracts into the load lock chamber 20, the valve bodies 31a, 31b of the gate valves 30a, 30b are closed, and the inside of the vacuum processing chamber 10 is evacuated to a necessary vacuum degree by the vacuum pump 60. In addition, in this state, the exhaust control valve 65 is opened, and the inside of the valve housing 95a of the gate valve 30a is decompressed and exhausted through the exhaust pipe 27 .

The atmospheric side transfer mechanism 50 uses the transfer arm 51 to take out the unprocessed substrate G from the substrate rack 55, and carries it into the load lock chamber 20 through the opening 41 of the gate valve 40, and is positioned directly above the slide plate 74 of the substrate transfer device 70.

Next, the buffer plates 81 and 82 rise to pinch the periphery of the substrate G from both sides to float the substrate G from the transfer arm 51 .

After that, the transfer arm 51 is pulled out from the atmosphere side and retracted to the outside of the load tight chamber 20, the buffer plates 81 and 82 are lowered, and the substrate G is moved onto the slide plate 74 (slide pickup unit 74a) of the substrate transfer device 70, loaded.

In addition, the valve body 42 of the gate valve 40 is closed to make the load lock chamber 20 into a sealed state, and any one or more of the on-off valves 62, 63, 64 is opened, and the vacuum pump 60 is operated at the same time, thereby exhausting the load lock chamber 20. After the gas reaches the same degree of vacuum as that of the vacuum processing chamber 10, the sealing of the openings 90, 94 by the valve bodies 31a, 31b of the gate valves 30a, 30b is released. At this time, since the load lock chamber 20 is evacuated, the degree of vacuum or the atmosphere of the vacuum processing chamber 10 is not impaired.

Next, through the openings 93, 90, 94, the slide plate 74 of the substrate transfer device 70 enters toward the inside of the vacuum processing chamber 10, and the substrate G is carried into the upper part of the processing table 13 of the vacuum processing chamber 10, and passed through the vacuum processing chamber 10. Protruding pins (not shown) and the like inside are placed on the processing table 13 . Then, the slide plate 74 is evacuated into the load lock chamber 20, the openings 90, 94 are sealed by the valve bodies 31a, 31b of the gate valves 30a, 30b, and the vacuum processing chamber 10 is hermetically sealed.

Then, necessary gases are introduced from the processing gas supply unit 12 into the sealed vacuum processing chamber 10 to form a processing gas atmosphere, and necessary processing is performed on the substrate.

After a predetermined time elapses, the introduction of the process gas is stopped, the valve bodies 31a, 31b of the gate valves 30a, 30b are lowered, and the sealing of the openings 90, 94 is released. Inside the vacuum processing chamber 10, the slide plate 74 of the substrate transfer device 70 in the load lock chamber 20 is extended into multiple stages, and the substrate G that has been processed in the vacuum processing chamber 10 is moved from The processing table 13 is moved onto the slide plate 74 , and then the slide plate 74 is retracted to be carried out into the load lock chamber 20 . Then, the openings 90, 94 are closed by the valve bodies 31a, 31b of the gate valves 30a, 30b, and the vacuum processing chamber 10 is hermetically sealed. In addition, in the same manner as above, the exhaust control valve 65 is opened, and the inside of the valve housing 95a of the gate valve 30a is decompressed and exhausted through the exhaust pipe 27 .

Then, while the exhaust of the load lock chamber 20 is stopped, the buffer plates 81 and 82 are lifted up to support the peripheral portion of the substrate G to float, and the gas is gradually passed through the pressure adjustment pipes 28 and 29 (see FIG. 5 ) to be described later. Introduce _N2 etc., after reaching close to atmospheric pressure, open the valve body 42 of the gate valve 40, insert the conveying arm 51 of the atmospheric side conveying mechanism 50 into the lower side of the floating substrate G, in this state, make the buffer plate 81, 82 descends to move the substrate G onto the transfer arm 51 .

By drawing the transfer arm 51 to the atmosphere side, the processed substrate G can be carried out from the load lock chamber 20 to the atmosphere side and stored in the substrate rack 55 .

In the vacuum processing apparatus 100 with the above structure, due to the arrangement of the double gate valves 30a, 30b, in the state of closing the gate valves 30a, 30b, the isolation between the load lock chamber 20 and the vacuum processing chamber 10 can be reliably formed, and the moisture from the The load lock chamber 20 which is repeatedly in an atmospheric state and a high vacuum state is mixed into the vacuum processing chamber 10 .

In addition, since the valve bodies 31a, 31b of the gate valves 30a, 30b are pressed from the direction of differential pressure during sealing, that is, from the load lock chamber 20 on the atmospheric pressure side to the vacuum processing chamber 10 on the vacuum side, it is possible to pass through the valve bodies 31a, 31b. Make a reliable seal.

In addition, since the exhaust pipe 27 for depressurizing and exhausting the inside of the valve frame 95a of the exhaust gate valve 30a is provided, even if the load lock chamber 20 is open to the atmosphere, it can be sandwiched between the vacuum processing chambers 10. The valve housing 95a of the gate valve 30a that decompresses the inside to a predetermined pressure can reliably prevent air from leaking from the load chamber 20 to the vacuum processing chamber 10 and prevent moisture from entering the vacuum processing chamber 10 .

Next, the procedure of evacuation and gas replacement of the load lock chamber 20 in order to more reliably prevent moisture from entering the vacuum processing chamber 10 will be described with reference to FIGS. 5 and 6 . FIG. 5 schematically shows a schematic configuration of the exhaust path and the purge gas supply path of the load lock chamber 20 . As described above, the exhaust pipes 21 , 22 , and 23 having different conductances are respectively connected to the load lock chamber 20 . Specifically, holes (throttles) not shown are disposed in the middle of the respective exhaust pipes 21 , 22 , 23 , and the flow conductance of the exhaust pipes 21 , 22 , 23 is adjusted by varying the diameters of the holes. Wherein, the diameters of the exhaust pipes 21 , 22 , 23 can also be changed to adjust to the desired conductance.

An on-off valve 62 is installed in the middle of the exhaust pipe 21 , an on-off valve 63 is installed in the middle of the exhaust pipe 22 , and an on-off valve 64 is installed in the middle of the exhaust pipe 23 . The respective exhaust pipes 21 , 22 , and 23 are connected to a mechanical booster pump (MBP) 60 a and a dry pump (DP) 60 b (vacuum pump 60 ), so that the inside of the load lock chamber 20 can be vacuum-exhausted.

Also, an N ₂ gas supply source 26 is connected to the load lock chamber 20 through an N ₂ gas supply line 24 , and supplies N ₂ gas as a purge gas into the load lock chamber 20 .

Among them, the load lock chamber 20 is connected to the _N2 gas supply source 26 through the pressure adjustment pipeline 28 with a large flow conductance and the pressure adjustment pipeline 29 with a small flow conductance, and by switching the on-off valve 65 and the on-off valve 66, Slowly introducing N ₂ gas suppresses a sudden increase in pressure when the load lock chamber 20 in a vacuum state is released to the atmosphere.

The exhaust pipe 21 functions as an exhaust path for high-speed exhaust with maximum flow conductance. The exhaust pipe 23 has a smaller flow conductance than the exhaust pipe 21 , and the exhaust pipe 22 also has a smaller flow conductance than the exhaust pipe 23 . By combining the opening and closing of the opening and closing valves 62, 63, and 64 of these exhaust pipes 21, 22, and 23, a plurality of exhaust path patterns can be created. For example, in this embodiment, the hole diameter of the exhaust pipe 21 is 40 mm, the hole diameter of the exhaust pipe 22 is 10 mm, and the hole diameter of the exhaust pipe 23 is 15 mm. In addition, the number of exhaust pipes is not limited to 3, and when the number of exhaust pipes is n, exhaust paths of (2n-1) graphs can be created by combining them.

In this embodiment, in the state of closing the on-off valves 62, 64 and opening the on-off valve 63, the exhaust pipe 22 with a minimum opening diameter of 10 mm is used to exhaust the air to form an exhaust path with the smallest flow conductance ( referred to as the "first exhaust path").

In addition, in the state of closing the on-off valves 62, 63 and opening the on-off valve 64, the exhaust pipe 23 with a minimum opening diameter of 15 mm is used to exhaust the air, which constitutes the first structure of the flow path conductance ratio of the exhaust pipe 22. Exhaust path with slightly larger exhaust path (called "second exhaust path").

In addition, in the state of closing the on-off valve 62 and opening the on-off valve 63 and the on-off valve 64, the minimum opening diameters of the exhaust pipe 22 and the exhaust pipe 23 are 25mm (10mm+15mm) in total, and the structure and exhaust Compared with the second exhaust path constituted by the pipe 23, the exhaust path has a slightly larger flow conductance (referred to as "the third exhaust path").

In addition, in the state of closing the on-off valves 63, 64 and only opening the on-off valve 62, the exhaust pipe 21 with a minimum opening diameter of 40mm is used to exhaust the air, forming a high-speed exhaust path with a large flow conductance (referred to as " Fourth Exhaust Path").

Thus, by arranging the exhaust pipes 21 , 22 , 23 with different conductances and switching the opening and closing of the valves 62 , 63 , 64 , multiple modes of exhaust paths can be formed. In the process of exhausting the load lock chamber 20, by switching the first to fourth exhaust paths, it is possible to prevent moisture atomization caused by a sudden pressure drop. Therefore, it is preferable to switch the exhaust path in the exhaust process using the pressure in the load lock chamber 20 as an index. For example, when exhausting from the atmospheric pressure of 101325Pa (760Torr), in the process of exhausting the load lock chamber 20, since moisture atomization is likely to occur below 26664Pa (200Torr), it is preferable to reduce the pressure before reaching this pressure. During the compression process, avoid the high-speed exhaust caused by the fourth exhaust path.

FIG. 6 shows a preferred example of the sequence of evacuating the inside of the load lock chamber 20 from being released to the atmosphere to a high vacuum state. The pressure value for switching from the first exhaust path to the fourth exhaust path is not limited to the following example, and can be set appropriately. In addition, switching from the first exhaust route to the fourth exhaust route may be performed with time as the target instead of pressure.

First, in step S11, the gate valve 40 is opened to open the load lock chamber 20 to the atmosphere. At the same time as the atmosphere is released, the gas control valve 25 is opened as necessary to purge the load lock chamber 20 with _N gas at a predetermined flow rate. . Thus, since the inside of the load lock chamber 20 is under a positive pressure, the entry of air from the clean chamber can be suppressed, and moisture or particles can be prevented from entering the load lock chamber 20 . At this time, the gate valves 30a, 30b are closed.

Next, in step S12, the gate valve 40 is closed from the open state to the atmosphere, and the load lock chamber 20 is closed.

Next, in step S13, the on-off valves 62, 64 are closed, the on-off valve 63 is opened, the mechanical booster pump (MBP) 60a and the dry pump (DP) 60b are operated, and the load lock chamber is performed using the first exhaust path. Exhaust in 20. The exhaust in step S13 is performed with the aim of reducing the pressure in the load lock chamber 20 to about 79992 Pa (600 Torr).

If the pressure in the load lock chamber 20 drops to 79992Pa (600Torr), then, for example, after 3 seconds, from the state of step S13, the on-off valve 63 is closed, the on-off valve 64 is opened, and exhaust is performed through the second exhaust path ( Step S14). The exhaust in step S14 is performed with the aim of reducing the pressure in the load lock chamber 20 to about 53328 Pa (400 Torr).

When the pressure in the load lock chamber 20 drops to 53328 Pa (400 Torr), for example, 5 seconds later, from the state of step S14, the on-off valve 63 is opened to switch to the third exhaust path for exhaust (step S15). The exhaust in step S15 is performed with the aim of reducing the pressure in the load lock chamber 20 to 26664 Pa (200 Torr).

If the pressure in the load lock chamber 20 drops to about 26664Pa (200Torr), then after, for example, 1 second, from the state of step S15, close the on-off valves 63, 64, only open the on-off valve 62, and switch to the fourth exhaust. The path is exhausted at a high speed (step S16). The exhaust in step S16 is performed by reducing the pressure in the load lock chamber 20 from about 26664 Pa (200 Torr) to a predetermined high vacuum state.

Therefore, in step S13 to step S16, by switching from the first exhaust path to the fourth exhaust path according to the pressure in the load lock chamber 20, moisture in the atmosphere is easily atomized during the exhaust process. During the depressurization process below 26664Pa (200Torr), the exhaust velocity is gradually increased due to slow exhaust, and by moving to high-speed exhaust below about 26664Pa (200Torr), which is difficult to cause moisture atomization, The water in the load lock chamber 20 can be reliably removed, and the incorporation of water into the vacuum processing chamber 10 can be prevented.

Then enter the exhaust in step S16, when the pressure inside the load lock chamber 20 reaches 53.328Pa (400mTorr), open the gas control valve 25, with a prescribed flow rate such as 6000-8000mL/min, preferably 7000mL/min, the N ₂ gas is introduced into the load lock chamber 20 (step S17). The flow rate of N ₂ gas to be introduced can be set according to the exhaust capacity of the vacuum pump 60, and it is preferable to set the flow rate to the extent as exemplified above based on the partial pressure ratio of air and N ₂ . This N ₂ gas purge is performed by replacing the atmosphere in the load lock chamber 20 with N ₂ under reduced pressure, and finally removing the moisture remaining in the load lock chamber 20 . The purge with N ₂ gas is preferably carried out for a predetermined time, for example, 15 to 30 seconds, preferably about 23 seconds, when the pressure in the load lock chamber 20 reaches, for example, 13.332 Pa (100 mTorr).

In the above sequence of steps S13 to S16, the first to fourth exhaust paths are switched to exhaust the load lock chamber 20, and by performing the _N2 gas purge in step S17, the load lock chamber 20 can be suppressed. Moisture atomization and residue can depressurize the load lock chamber 20 to a high vacuum state. Therefore, when the gate valves 30 a , 30 b are opened to exchange the substrate G with the vacuum processing chamber 10 after depressurizing and exhausting the load lock chamber 20 , it is possible to reliably prevent moisture from entering the vacuum processing chamber 10 .

The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the concept of the present invention.

For example, in the above-mentioned embodiments, a vacuum processing apparatus for processing an LCD substrate was used as an example of the substrate, but not limited thereto, and may be a vacuum processing apparatus for processing other FPD substrates or semiconductor wafers. In addition, as the FPD, in addition to the liquid crystal display (LCD), light emitting diode (LED) display, electroluminescence (EL: electroluminescence) display, fluorescent display (VFD: vacuum Fluorescent Display), plasma display panel (PDP), etc. .

In addition, in the above-described embodiment, three exhaust pipes 21 , 22 , and 23 having different channel conductances are arranged in the load lock chamber 20 , but four or more exhaust pipes may be arranged.

In addition, in the above-mentioned embodiment, the vacuum processing apparatus 100 with the structure in which the vacuum preparation chamber 20 is arranged adjacent to the vacuum processing chamber 10 is used as an example for description, but in the case where the vacuum transfer chamber is arranged between the vacuum processing chamber and the vacuum preparation chamber, In processing plants, the present invention is also applicable.

Possibility of industrial use

The present invention can be utilized in a vacuum processing apparatus having a vacuum processing chamber and a vacuum preparation chamber.

Claims (14)

1. vacuum treatment installation is characterized in that possessing:

In a vacuum substrate is carried out the vacuum processing chamber of predetermined process;

Described substrate being moved in the process of taking out of described vacuum processing chamber, temporarily take in described substrate, its inside alternately keeps the loadlock may of atmosphere opening state and vacuum state; With

The gate valve of duplex configuration between described vacuum processing chamber and described loadlock may.

2. vacuum treatment installation as claimed in claim 1 is characterized in that also possessing:

First gate valve of the opening that switching forms in described vacuum processing chamber; With

And this first gate valve disposed adjacent, open and close and this first gate valve between second gate valve of the opening that forms.

3. vacuum treatment installation as claimed in claim 2 is characterized in that, described first gate valve and described second gate valve open and close synchronously.

4. vacuum treatment installation as claimed in claim 3 is characterized in that, described first gate valve and described second gate valve, when sealing with valve body from the loadlock may side pressure of relatively high pressure vacuum processing chamber side to low pressure.

5. as each described vacuum treatment installation in the claim 2～4, it is characterized in that, be used for the blast pipe of decompression exhaust in the valve container is connected with described first gate valve.

6. as each described vacuum treatment installation in the claim 1～5, it is characterized in that many different blast pipes of stream conductance are connected with described loadlock may.

7. as each described vacuum treatment installation in the claim 1～6, it is characterized in that the purge gas supply source that imports purge gas is connected with described loadlock may.

8. vacuum treatment installation is characterized in that possessing:

In a vacuum substrate is carried out the vacuum processing chamber of predetermined process;

Described substrate being moved in the process of taking out of described vacuum processing chamber, temporarily take in described substrate, its inside alternately keeps the loadlock may of atmosphere opening state and vacuum state;

Many different blast pipes of stream conductance with described loadlock may connection; With

Be connected with described blast pipe, to carrying out the exhaust unit of vacuum exhaust in the described loadlock may.

9. vacuum treatment installation as claimed in claim 8 is characterized in that, described many blast pipes possess:

Downtake pipe;

The second exhaust pipe that the stream conductance is bigger than described downtake pipe; With

The 3rd blast pipe that the stream conductance is bigger than described second exhaust pipe.

10. the method for exhausting of a loadlock may, it is characterized in that, loadlock may is vented to described vacuum state, described loadlock may is being moved into substrate in the process of taking out of vacuum processing chamber, temporarily take in substrate, inside alternately keeps atmosphere opening state and vacuum state simultaneously;

Use the many different blast pipes of stream conductance that connect with described loadlock may, switch exhaust velocity, increase exhaust velocity by stages, carry out exhaust.

11. the method for exhausting of loadlock may as claimed in claim 10 is characterized in that, is benchmark with the pressure in the described loadlock may, carries out the switching of described exhaust velocity.

12. the method for exhausting as claim 10 or 11 described loadlock may is characterized in that, in the stage that described loadlock may is decompressed to authorized pressure, continues exhaust, and at the appointed time purge gas is imported in this loadlock may.

13. the method for exhausting of a loadlock may, it is characterized in that, loadlock may is vented to described vacuum state, described loadlock may is being moved into substrate in the process of taking out of vacuum processing chamber, temporarily take in substrate, inside alternately keeps atmosphere opening state and vacuum state simultaneously;

In the stage that described loadlock may is decompressed to authorized pressure, continue exhaust, and at the appointed time purge gas is imported in this loadlock may.

14. the step-up method of a loadlock may, it is characterized in that, loadlock may is boosted from described vacuum state that described loadlock may is being moved into substrate in the process of taking out of vacuum processing chamber, temporarily take in substrate, inside alternately keeps atmosphere opening state and vacuum state simultaneously;

In making described loadlock may, when atmosphere opening,, make described loadlock may under the atmosphere opening state, become malleation by importing purge gas with the regulation flow.

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