CN1934655B - 探测半导体存储器中延迟故障的方法及测试电路 - Google Patents

探测半导体存储器中延迟故障的方法及测试电路 Download PDF

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Publication number
CN1934655B
CN1934655B CN2005800095975A CN200580009597A CN1934655B CN 1934655 B CN1934655 B CN 1934655B CN 2005800095975 A CN2005800095975 A CN 2005800095975A CN 200580009597 A CN200580009597 A CN 200580009597A CN 1934655 B CN1934655 B CN 1934655B
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CN
China
Prior art keywords
semiconductor memory
data
bits
address
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800095975A
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English (en)
Chinese (zh)
Other versions
CN1934655A (zh
Inventor
M·阿齐曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
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Publication date
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Publication of CN1934655A publication Critical patent/CN1934655A/zh
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Publication of CN1934655B publication Critical patent/CN1934655B/zh
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Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56004—Pattern generation

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CN2005800095975A 2004-03-26 2005-03-23 探测半导体存储器中延迟故障的方法及测试电路 Expired - Fee Related CN1934655B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US55670604P 2004-03-26 2004-03-26
US60/556,706 2004-03-26
PCT/IB2005/051006 WO2005093761A1 (en) 2004-03-26 2005-03-23 Method for detecting resistive-open defects in semiconductor memories

Publications (2)

Publication Number Publication Date
CN1934655A CN1934655A (zh) 2007-03-21
CN1934655B true CN1934655B (zh) 2011-06-08

Family

ID=34962300

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800095975A Expired - Fee Related CN1934655B (zh) 2004-03-26 2005-03-23 探测半导体存储器中延迟故障的方法及测试电路

Country Status (7)

Country Link
US (1) US7536610B2 (de)
EP (1) EP1738375B1 (de)
JP (1) JP2007531191A (de)
CN (1) CN1934655B (de)
AT (1) ATE396484T1 (de)
DE (1) DE602005007003D1 (de)
WO (1) WO2005093761A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100582391B1 (ko) * 2004-04-08 2006-05-22 주식회사 하이닉스반도체 반도체 소자에서의 지연 요소의 지연 검출 장치 및 방법
US7475314B2 (en) * 2005-12-15 2009-01-06 Intel Corporation Mechanism for read-only memory built-in self-test
CN102486938B (zh) * 2010-12-06 2015-01-07 北大方正集团有限公司 一种快速检测存储器的方法及装置
CN103999160B (zh) * 2011-12-28 2017-03-01 英特尔公司 使用基于模式的信令调制的存储器定时优化
US9076558B2 (en) * 2012-11-01 2015-07-07 Nanya Technology Corporation Memory test system and memory test method
TWI847340B (zh) * 2022-11-01 2024-07-01 瑞昱半導體股份有限公司 記憶體測試電路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399912A (en) * 1992-01-13 1995-03-21 Hitachi, Ltd. Hold-type latch circuit with increased margin in the feedback timing and a memory device using same for holding parity check error
US5959915A (en) * 1997-06-30 1999-09-28 Samsung Electronics, Co., Ltd. Test method of integrated circuit devices by using a dual edge clock technique
CN1402873A (zh) * 1999-12-03 2003-03-12 日本电气株式会社 半导体存储装置及其测试方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09507945A (ja) * 1994-11-09 1997-08-12 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ メモリアドレスデコーダと誤り許容メモリアドレスデコーダをテストする方法
US5621739A (en) * 1996-05-07 1997-04-15 Intel Corporation Method and apparatus for buffer self-test and characterization
US5787092A (en) * 1997-05-27 1998-07-28 Hewlett-Packard Co. Test chip circuit for on-chip timing characterization
US5936977A (en) * 1997-09-17 1999-08-10 Cypress Semiconductor Corp. Scan path circuitry including a programmable delay circuit
DE10035169A1 (de) * 2000-07-19 2002-02-07 Infineon Technologies Ag Verfahren und Vorrichtung zum Testen von Setup-Zeit und Hold-Zeit von Signalen einer Schaltung mit getakteter Datenübertragung
US6829728B2 (en) * 2000-11-13 2004-12-07 Wu-Tung Cheng Full-speed BIST controller for testing embedded synchronous memories
EP1629506B1 (de) * 2003-05-22 2009-04-29 Nxp B.V. Test von ram addressdekodierern auf widerstandsbehaftete leiterunterbrechungen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399912A (en) * 1992-01-13 1995-03-21 Hitachi, Ltd. Hold-type latch circuit with increased margin in the feedback timing and a memory device using same for holding parity check error
US5959915A (en) * 1997-06-30 1999-09-28 Samsung Electronics, Co., Ltd. Test method of integrated circuit devices by using a dual edge clock technique
CN1402873A (zh) * 1999-12-03 2003-03-12 日本电气株式会社 半导体存储装置及其测试方法

Also Published As

Publication number Publication date
CN1934655A (zh) 2007-03-21
EP1738375A1 (de) 2007-01-03
JP2007531191A (ja) 2007-11-01
DE602005007003D1 (de) 2008-07-03
WO2005093761A1 (en) 2005-10-06
ATE396484T1 (de) 2008-06-15
EP1738375B1 (de) 2008-05-21
US7536610B2 (en) 2009-05-19
US20050216799A1 (en) 2005-09-29

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PB01 Publication
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SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20090605

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20090605

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110608

Termination date: 20210323

CF01 Termination of patent right due to non-payment of annual fee