CN205828351U - 用于化学处理半导体衬底的装置 - Google Patents

用于化学处理半导体衬底的装置 Download PDF

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Publication number
CN205828351U
CN205828351U CN201620228808.XU CN201620228808U CN205828351U CN 205828351 U CN205828351 U CN 205828351U CN 201620228808 U CN201620228808 U CN 201620228808U CN 205828351 U CN205828351 U CN 205828351U
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CN
China
Prior art keywords
substrate
pretreatment
liquid
semiconductor substrate
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201620228808.XU
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English (en)
Chinese (zh)
Inventor
彼得·法思
斯蒂芬·凯勒
伊霍·梅尔尼克
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Rct Solutions Ltd
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Rct Solutions Ltd
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Publication date
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Publication of CN205828351U publication Critical patent/CN205828351U/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Weting (AREA)
CN201620228808.XU 2015-03-25 2016-03-23 用于化学处理半导体衬底的装置 Expired - Lifetime CN205828351U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015205437.3A DE102015205437A1 (de) 2015-03-25 2015-03-25 Vorrichtung und Verfahren zur chemischen Behandlung eines Halbleiter-Substrats
DE102015205437.3 2015-03-25

Publications (1)

Publication Number Publication Date
CN205828351U true CN205828351U (zh) 2016-12-21

Family

ID=55542657

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201620228808.XU Expired - Lifetime CN205828351U (zh) 2015-03-25 2016-03-23 用于化学处理半导体衬底的装置
CN201610169935.1A Pending CN106024614A (zh) 2015-03-25 2016-03-23 用于化学处理半导体衬底的装置和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610169935.1A Pending CN106024614A (zh) 2015-03-25 2016-03-23 用于化学处理半导体衬底的装置和方法

Country Status (4)

Country Link
CN (2) CN205828351U (de)
DE (1) DE102015205437A1 (de)
TW (1) TW201703131A (de)
WO (1) WO2016150788A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015223227A1 (de) * 2015-11-24 2017-05-24 Rct Solutions Gmbh Vorrichtung und Verfahren zur chemischen Behandlung eines Halbleiter-Substrats
CN207993803U (zh) * 2017-04-13 2018-10-19 Rct解决方法有限责任公司 用于化学处理带有被锯割形成的表面结构的半导体衬底的设备
CN108735595A (zh) * 2017-04-13 2018-11-02 Rct解决方法有限责任公司 用于化学处理半导体衬底的方法和设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4423326A1 (de) * 1994-07-02 1996-01-04 Bosch Gmbh Robert Verfahren und Vorrichtung zum Rückseitenätzen einer Silicium-Waferstruktur
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
CN102714134B (zh) * 2009-09-22 2016-01-13 雷纳有限公司 用于回蚀半导体层的方法和装置
DE102009050845A1 (de) * 2009-10-19 2011-04-21 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberfläche eines Substrats
DE102012107372B4 (de) * 2012-08-10 2017-03-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Alkalischer Ätzprozess und Vorrichtung zur Durchführung des Verfahrens
CN103618020A (zh) * 2013-10-18 2014-03-05 浙江晶科能源有限公司 一种硅太阳能电池生产中的湿刻蚀方法

Also Published As

Publication number Publication date
CN106024614A (zh) 2016-10-12
DE102015205437A1 (de) 2016-09-29
WO2016150788A1 (de) 2016-09-29
TW201703131A (zh) 2017-01-16

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CX01 Expiry of patent term

Granted publication date: 20161221

CX01 Expiry of patent term