CN206516634U - The semiconductor devices of cache layer containing nitrogen gallium aluminium and nitrogen gallium indium - Google Patents
The semiconductor devices of cache layer containing nitrogen gallium aluminium and nitrogen gallium indium Download PDFInfo
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- CN206516634U CN206516634U CN201621439525.6U CN201621439525U CN206516634U CN 206516634 U CN206516634 U CN 206516634U CN 201621439525 U CN201621439525 U CN 201621439525U CN 206516634 U CN206516634 U CN 206516634U
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- nitrogen gallium
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 202
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 102
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 99
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 239000004411 aluminium Substances 0.000 title claims abstract description 86
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 83
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 31
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 150000004767 nitrides Chemical class 0.000 claims abstract description 48
- 238000003475 lamination Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 20
- 229910017083 AlN Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- -1 indium Chemical class 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- Recrystallisation Techniques (AREA)
Abstract
The utility model is related to a kind of semiconductor devices of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium.The top that the semiconductor devices includes substrate, is located at the inculating crystal layer on the substrate top, is located at the inculating crystal layer includes the cushion of nitrogen gallium aluminium lamination and nitrogen gallium indium layer and is located at III nitride epitaxial layers on the cache layer top.The utility model includes the cushion of nitrogen gallium aluminium lamination and nitrogen gallium indium layer by setting, effectively alleviate the lattice mismatch and thermal mismatching between III nitride epitaxial layers and substrate, and because being stacked nitrogen gallium indium layer in cushion, the nitrogen gallium aluminium lamination grown in cushion is set to be in compressive strain state, inhibit nitrogen gallium aluminium lamination to increase the more dislocation defects produced and larger internal stress with thickness, and then high-quality III nitride epitaxial layers can be obtained.
Description
Technical field
The utility model is related to field of semiconductor devices, more particularly to a kind of cache layer containing nitrogen gallium aluminium and nitrogen gallium indium
Semiconductor devices.
Background technology
III hi-nitride semiconductor material is described as being third generation semi-conducting material, including gallium nitride (GaN), aluminium nitride
(AlN), indium nitride (InN) and formed between them three, quaternary alloy, such as nitrogen gallium aluminium (AlGaN), nitrogen aluminium indium (InAlN)
With nitrogen gallium indium (InGaN).III hi-nitride semiconductor material based on gallium nitride (GaN) has wide direct for gap (Eg=
3.36eV), high-melting-point, high heat conductance, high saturated electrons speed, high critical breakdown electric field intensity and high electronics room temperature mobilities,
It is widely used in metal-semiconductor field effect transistor (MESFET), HEMT (HEMT), heterojunction field
High temperature resistant, high pressure and the high frequency transition parts such as effect transistor (HFET), light emitting diode (LED).
Due to hardly resulting in large-sized gallium nitride single crystal material at present, in order to obtain high-quality gallium nitride film,
By carrying out heteroepitaxial growth on the backing materials such as silicon, sapphire or carborundum.Wherein silicon have high-quality, price it is low,
It is easy to cleavage and makes the advantages such as electrode, is most potential backing material.But it is due to that silicon and gallium nitride have larger crystalline substance
Thermal mismatching between lattice mismatch and thermal mismatching, such as gallium nitride and silicon is 56%, and lattice mismatch is 19.6%, is grown in silicon substrate
More dislocation defects and larger internal stress can be produced on epitaxial layer of gallium nitride, and these defects can cause epitaxial layer production to be split
Line, governs the growth of high-quality gallium nitride film.
In order to preferably suppress the crackle of gallium nitride layer stress generation, its crystal mass is improved, in heteroepitaxial growth
In generally comprise inculating crystal layer and cushion.The cache layer of traditional semiconductor devices is on silicon substrate aluminium nitride inculating crystal layer top, shape
Into the structure of certain thickness nitrogen gallium aluminium cushion.But nitrogen gallium aluminium cache layer can produce more position with the increase of thickness
Wrong defect and larger internal stress, cause the low quality of gallium nitride layer grown up thereon.
Utility model content
Based on this, it is necessary to for nitrogen gallium aluminium cache layer with the increase of thickness, can produce more dislocation defects and compared with
The problem of big internal stress, there is provided a kind of semiconductor devices of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium.
A kind of semiconductor devices of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium, including：
Substrate；
Inculating crystal layer, the inculating crystal layer is located at the top of the substrate；
Cushion, the cushion is arranged on the top of the inculating crystal layer, and the cushion includes nitrogen gallium aluminium lamination and nitrogen gallium
Indium layer；And
III nitride epitaxial layers, III nitride epitaxial layers are arranged on the top of the cushion.
In one of the embodiments, the cushion includes individual layer nitrogen gallium aluminium lamination and individual layer nitrogen gallium indium layer.
In one of the embodiments, nitrogen gallium aluminium lamination and/or nitrogen gallium indium layer is multilayer, and nitrogen gallium indium layer and institute
State nitrogen gallium aluminium lamination alternately laminated.
In one of the embodiments, when the nitrogen gallium aluminium lamination has multilayer, each layer of nitrogen gallium aluminium in the cache layer
The doping concentration of aluminium is different in layer, wherein the doping concentration of aluminium is no more than 1 in the nitrogen gallium aluminium lamination.
In one of the embodiments, the substrate is Sapphire Substrate, silicon substrate or silicon carbide substrates.
In one of the embodiments, the inculating crystal layer is aln layer and/or nitrogen gallium aluminium lamination.
In one of the embodiments, III nitride epitaxial layers include epitaxial layer of gallium nitride and nitrogen gallium aluminium epitaxial layer
In at least one layer, and in III nitride epitaxial layers have by epitaxial layer of gallium nitride and nitrogen gallium aluminium epitaxial layer constitute it is different
Matter structure.
In one of the embodiments, in addition to the aln inserting layer that is arranged in the middle of III nitride epitaxial layers
And/or nitrogen gallium aluminium insert layer.
Above-mentioned semiconductor device, forms the buffering that a nitrogen gallium aluminium lamination is set with nitrogen gallium indium layer stackup on inculating crystal layer top
Layer, the structure that nitrogen gallium aluminium lamination in cushion is adjusted by changing aluminium doping concentration is constructed, and effectively alleviates III nitride epitaxial layers
Lattice mismatch and thermal mismatching between substrate, and because being stacked nitrogen gallium indium layer in cushion, make raw in cushion
Long nitrogen gallium aluminium lamination be in compressive strain state, it is suppressed that nitrogen gallium aluminium lamination with thickness increase produce more dislocation defects and compared with
Big internal stress, and then high-quality III nitride epitaxial layers can be obtained.
Brief description of the drawings
Fig. 1 is the structural representation of the semiconductor devices of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium of an embodiment；
Fig. 2 is the structure of the cushion of the semiconductor devices of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium of an embodiment
Schematic diagram.
Embodiment
For the ease of understanding the utility model, of the present utility model adulterated containing silicon is nitrogenized below with reference to relevant drawings
The semiconductor devices and its manufacture method of aluminium lamination are described more fully.Preferable implementation of the present utility model is given in accompanying drawing
Example.But, the utility model can be realized in many different forms, however it is not limited to embodiment described herein.Conversely
Ground is to make the understanding to disclosure of the present utility model more thorough comprehensive there is provided the purpose of these embodiments.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with belonging to technology of the present utility model
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein " and/or " include
The arbitrary and all combination of one or more related Listed Items.
As shown in figure 1, the semiconductor devices of an embodiment includes substrate 101, inculating crystal layer 102, cushion 103, first
III nitride epitaxial layers 104 and the 2nd III nitride epitaxial layers 106.
In the present embodiment, the material of substrate 101 is selected except the thermal expansion system of lattice mismatch to be considered, material
Number, will also consider the size and price of material.In the present embodiment, the material selection silicon of substrate 101.It is appreciated that
In other embodiments, the material of substrate 101 can also be sapphire or carborundum etc..
Inculating crystal layer 102 is located at the upper surface of substrate 101, and main function is, in substrate surface formation nucleating point, to be conducive to III
Group-III nitride forming core and growth on substrate.In the present embodiment, the material of inculating crystal layer 102 is aluminium nitride.Inculating crystal layer 102 by
One or more layers aln layer construction is formed.It is preferred that, the thickness of inculating crystal layer 102 is less than or equal to 500nm.It is appreciated that at it
In his embodiment, the material of inculating crystal layer 102 is other III group-III nitrides such as nitrogen gallium aluminium, gallium nitride, silicon nitride, or a few persons group
Close.Inculating crystal layer 102 is one layer or many containing other III group iii nitride layers composition such as aln layer, gallium nitride layer, silicon nitride layer
Rotating fields.
Cushion 103 is located at the top of inculating crystal layer 102, and main function is III nitride epitaxial layers of effective alleviation and substrate
Between lattice mismatch and thermal mismatching, reduce the strain of III nitride epitaxial layers stress generation, reduction dislocation and defect
Generation, and then form preferable III nitride epitaxial layers.In the present embodiment, the material of cushion 103 is nitrogen gallium indium
And aluminium nitride, wherein aluminium nitride material can (aluminium be relative to aln layer according to outer layer growth requirement change aluminium doping concentration
Mass fraction).It is preferred that, the thickness of cushion 103 is less than or equal to 5um.
As shown in Fig. 2 cushion 103 is nitrogen gallium aluminium lamination 111 and surpassing that nitrogen gallium indium layer 112 successively alternately laminated growth is constituted
Lattice Rotating fields.Wherein, the doping concentration of the aluminium in cushion 103 in second layer nitrogen gallium aluminium lamination 111 is relative to first layer nitrogen gallium
The doping concentration of aluminium in the doping concentration increase by 15% of aluminium in aluminium lamination 111, third layer nitrogen gallium aluminium lamination 111 is relative to first layer
The doping concentration increase by 35% of aluminium in nitrogen gallium aluminium lamination 111, the doping concentration of the aluminium in third layer nitrogen gallium aluminium lamination 111 is relative to the
The doping concentration increase by 60% of aluminium in one layer of nitrogen gallium aluminium lamination 111.Aluminium in cushion 103 in each layer of nitrogen gallium aluminium lamination 111
Doping concentration can be unfixed, and the doping concentration of aluminium can be according to outside III group-III nitride in each layer of nitrogen gallium aluminium lamination 111
The growth demand for prolonging layer is adjusted, and can be irregular change.It is preferred that, the doping concentration of aluminium is not in nitrogen gallium aluminium lamination 111
More than 1.
It is appreciated that in other embodiments, cushion 103 can be one layer of nitrogen gallium aluminium lamination 111 and one layer of nitrogen gallium indium
Double-layer structure, the three-decker of two layers of nitrogen gallium aluminium lamination 111 and one layer of composition of nitrogen gallium indium layer 112, the one layer of nitrogen gallium aluminium of the composition of layer 112
The four of three-decker, two layers of nitrogen gallium aluminium lamination 111 and two layers of the composition of nitrogen gallium indium layer 112 that layer 111 and two layers of nitrogen gallium indium layer 112 are constituted
The super lattice layer structures that the nitrogen gallium such as Rotating fields aluminium lamination 111 is constituted with the alternately laminated growth of nitrogen gallium indium layer 112.Wherein, cushion 103
In the doping concentration of aluminium in each layer of nitrogen gallium aluminium lamination 111 can be fixed or unfixed.Each layer of nitrogen gallium aluminium
The doping concentration of aluminium can be adjusted according to the growth demand of III nitride epitaxial layers in layer 111, can be rule change
Or irregular change.It is preferred that, the doping concentration of aluminium is no more than 1 in nitrogen gallium aluminium lamination 111.
III nitride epitaxial layers are by the one III nitride epitaxial layers 104 and the structure of the 2nd III nitride epitaxial layers 106
Into.One III nitride epitaxial layers 104 are located at the top of cushion 103, and the 2nd III nitride epitaxial layers 106 are located at first
The top of III nitride epitaxial layers 104.In the present embodiment, the material of the one III nitride epitaxial layers 104 is nitridation
Gallium, the material of the 2nd III nitride epitaxial layers 106 is nitrogen gallium aluminium.
One nitrogen gallium aluminium/gallium nitride heterojunction structure of composition between epitaxial layer of gallium nitride and nitrogen gallium aluminium epitaxial layer, nitrogen gallium aluminium/
Gallium nitride heterojunction structure is the core component of semiconductor devices.Triangle situation is formed at nitrogen gallium aluminium/gallium nitride heterojunction structure interface
Trap, the de Broglie wavelength of electronics is bigger than the width of potential well, and the energy in surface direction forms son by occurring quantization
Can band, electronics only exists the free degree along surface both direction, these gesture in the loss of movement free degree in vertical surface direction
The electronics in trap with very high migration velocity is two-dimensional electron gas (2DEG).
It is appreciated that in other embodiments, the material of the one III nitride epitaxial layers 104 is that nitrogen transfers aluminium or nitrogen gallium
Other III group-III nitrides such as indium, the material of the 2nd III nitride epitaxial layers 106 is other III race nitrogen such as gallium nitride or indium nitride
Compound.III nitride epitaxial layers are one layer of the 1st nitride epitaxial layers 104 and one layer of the 2nd III nitride epitaxial layers
106 double-layer structure, two layers of the one III nitride epitaxial layers 104 and the one layer of structure of the 2nd III nitride epitaxial layers 106 constituted
Into three-decker, one layer of the 1st nitride epitaxial layers 104 and two layers the 2nd III nitride epitaxial layers 106 constitute three
The four-layer structure that Rotating fields, two layers of the one III nitride epitaxial layers 104 and two layers of the 2nd III nitride epitaxial layers 106 are constituted
Deng the sandwich construction constituted including the one III nitride epitaxial layers 104 and the 2nd III nitride epitaxial layers 106, and III race's nitrogen
Compound epitaxial layer has at least one heterojunction structure.
It is preferred that, as shown in figure 1, in the present embodiment, also having in the centre of the one III nitride epitaxial layers 104 slotting
Enter layer 105.The main function of insert layer 105 is that the epitaxial layer for making subsequent growth is in compressive strain state, is reduced in epitaxial layer
Stress and dislocation, and then the crackle in epitaxial layer is eliminated, obtain III nitride epitaxial layers of high-quality flawless.In this implementation
In mode, the material of insert layer 105 is aluminium nitride.It is preferred that, the thickness of insert layer 105 is less than or equal to 100nm.Insert layer 105
It is one or more layers structure that aln layer is constituted.It is appreciated that in other embodiments, the material of insert layer 105 is nitrogen
Gallium aluminium, insert layer can be that one or more layers structure that nitrogen gallium aluminium lamination is constituted or aln layer are constituted with nitrogen gallium aluminium lamination
Multistory masonry structure.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and it describes more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (7)
1. a kind of semiconductor devices of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium, it is characterised in that including：
Substrate；
Inculating crystal layer, the inculating crystal layer is located at the top of the substrate；
Cushion, the cushion is arranged on the top of the inculating crystal layer, and the cushion includes nitrogen gallium aluminium lamination and nitrogen gallium indium layer；
And
III nitride epitaxial layers, III nitride epitaxial layers are arranged on the top of the cushion.
2. semiconductor devices according to claim 1, it is characterised in that the cushion includes individual layer nitrogen gallium aluminium lamination and list
Layer nitrogen gallium indium layer.
3. semiconductor devices according to claim 1, it is characterised in that nitrogen gallium aluminium lamination and/or nitrogen the gallium indium layer is many
Layer, and nitrogen gallium indium layer is alternately laminated with the nitrogen gallium aluminium lamination.
4. semiconductor devices according to claim 1, it is characterised in that the substrate be Sapphire Substrate, silicon substrate or
Silicon carbide substrates.
5. semiconductor devices according to claim 1, it is characterised in that the inculating crystal layer is aln layer and/or nitrogen gallium
Aluminium lamination.
6. semiconductor devices according to claim 1, it is characterised in that III nitride epitaxial layers include gallium nitride
At least one layer in epitaxial layer and nitrogen gallium aluminium epitaxial layer, and in III nitride epitaxial layers have by epitaxial layer of gallium nitride with
The heterojunction structure that nitrogen gallium aluminium epitaxial layer is constituted.
7. the semiconductor devices according to claim any one of 1-6, it is characterised in that also including being arranged on III race nitrogen
Aln inserting layer and/or nitrogen gallium aluminium insert layer in the middle of compound epitaxial layer.
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| CN201621439525.6U CN206516634U (en) | 2016-12-26 | 2016-12-26 | The semiconductor devices of cache layer containing nitrogen gallium aluminium and nitrogen gallium indium |
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| CN201621439525.6U CN206516634U (en) | 2016-12-26 | 2016-12-26 | The semiconductor devices of cache layer containing nitrogen gallium aluminium and nitrogen gallium indium |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783968A (en) * | 2016-12-26 | 2017-05-31 | 英诺赛科（珠海）科技有限公司 | The semiconductor devices and its manufacture method of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium |
| CN114256057A (en) * | 2020-09-25 | 2022-03-29 | 华为技术有限公司 | Nitride epitaxial structure and semiconductor device |
-
2016
- 2016-12-26 CN CN201621439525.6U patent/CN206516634U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783968A (en) * | 2016-12-26 | 2017-05-31 | 英诺赛科（珠海）科技有限公司 | The semiconductor devices and its manufacture method of the cache layer containing nitrogen gallium aluminium and nitrogen gallium indium |
| CN106783968B (en) * | 2016-12-26 | 2024-07-26 | 英诺赛科（珠海）科技有限公司 | Semiconductor device including buffer layer of gallium aluminum nitride and gallium indium nitride and method of manufacturing the same |
| CN114256057A (en) * | 2020-09-25 | 2022-03-29 | 华为技术有限公司 | Nitride epitaxial structure and semiconductor device |
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