CN219800879U - Narrow-band-pass avalanche photodiode - Google Patents
Narrow-band-pass avalanche photodiode Download PDFInfo
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- CN219800879U CN219800879U CN202321154322.2U CN202321154322U CN219800879U CN 219800879 U CN219800879 U CN 219800879U CN 202321154322 U CN202321154322 U CN 202321154322U CN 219800879 U CN219800879 U CN 219800879U
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- avalanche photodiode
- filter film
- encapsulation layer
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- bandpass
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- 238000005538 encapsulation Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 claims description 39
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000001914 filtration Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本申请涉及一种窄带通雪崩光电二极管，通过在设置于基板上雪崩光电二极管上包覆式设置封装层，封装层包括包覆式设置在雪崩光电二极管上的第一封装层和包覆设置在第一封装层上的第二封装层，并于雪崩光电二极管的高度方向在第一封装层和第二封装层的上表面设置窄带通滤光膜，雪崩光电二极管自身实现了窄带通滤光，窄带通滤光膜距雪崩光电二极管更进，结构更加紧凑，对于其他波段杂散光的滤光效果更好。
The present application relates to a narrow-bandpass avalanche photodiode, in which an encapsulation layer is provided over the avalanche photodiode on a substrate. The encapsulation layer includes a first encapsulation layer overlying the avalanche photodiode and an encapsulation layer covering the avalanche photodiode. The second encapsulation layer is on the first encapsulation layer, and a narrow bandpass filter film is provided on the upper surface of the first encapsulation layer and the second encapsulation layer in the height direction of the avalanche photodiode. The avalanche photodiode itself realizes narrow bandpass filtering. The narrow bandpass filter film is further from the avalanche photodiode, has a more compact structure, and has a better filtering effect on stray light in other bands.
Description
Technical Field
The utility model relates to a narrow-band-pass avalanche photodiode, and belongs to the technical field of semiconductors.
Background
Avalanche Photodiodes (APDs) are photodetectors with high gain, have excellent performance for detection of weak light signals, and have wide application in the fields of laser ranging, laser detection, laser radar and the like.
Typically, avalanche Photodiodes (APDs) have a broad spectral range of reception, respond to incident light in a large spectral range around the center wavelength, and are susceptible to interference from stray light in other bands. Therefore, filtering measures are generally added in practical use. At present, the common filtering measures are all modes of attaching an interference filter on a device or plating a narrow-band filter film on the front end lens of a sensor in various practical applications, and the like, and the distance of the filtering measures is far away from an Avalanche Photodiode (APD), the structure is not compact, and the filtering effect on stray light of other wave bands is poor. In addition, the conventional narrow bandpass filter is usually composed of a long bandpass and a bandpass antireflection film, and two optical surfaces are required to realize the narrow bandpass filter, whereas the conventional resin package for Avalanche Photodiodes (APDs) is usually available with only one optical surface, so that the narrow bandpass filter cannot be directly realized on the Avalanche Photodiodes (APDs).
Disclosure of Invention
The utility model aims to provide a narrow-band-pass avalanche photodiode, which realizes narrow-band-pass filtering and has a compact structure and a good filtering effect on stray light of other wave bands when in use.
In order to achieve the above purpose, the present utility model provides the following technical solutions: a narrow bandpass avalanche photodiode comprising:
a substrate;
avalanche photodiode mounted on the substrate
The packaging layer comprises a first packaging layer which is arranged on the avalanche photodiode in a cladding mode and a second packaging layer which is arranged on the first packaging layer in a cladding mode; and
The narrow bandpass filter film comprises a first filter film arranged on the upper surface of the first packaging layer in the height direction of the avalanche photodiode and a second filter film arranged on the upper surface of the second packaging layer, and the first filter film is arranged between the first packaging layer and the second packaging layer.
Further, the narrow-band-pass filter film comprises a band-pass antireflection film and a long-wave-pass filter film, wherein one of the first filter film and the second filter film is the band-pass antireflection film, and the other is the long-wave-pass filter film.
Further, the first filter film is the long-wave pass filter film, and the second filter film is the band-pass antireflection film.
Further, the projection of the first filter film in the height direction covers the upper surface of the avalanche photodiode, and the projection of the second filter film and the projection in the height direction covers the first filter film.
Further, the encapsulation layer is of a resin structure.
Further, the first packaging layer and the second packaging layer are integrally formed on the periphery.
Further, the bottom of the packaging layer is connected with the substrate.
Further, the substrate is a PCB or a ceramic substrate.
The utility model has the beneficial effects that: according to the utility model, the packaging layer is arranged on the avalanche photodiode arranged on the substrate in a coating manner, the packaging layer comprises the first packaging layer arranged on the avalanche photodiode in a coating manner and the second packaging layer arranged on the first packaging layer in a coating manner, and the narrow bandpass filter films are arranged on the upper surfaces of the first packaging layer and the second packaging layer in the height direction of the avalanche photodiode, so that the avalanche photodiode realizes narrow bandpass filter, the narrow bandpass filter is more advanced from the avalanche photodiode, the structure is more compact, and the filtering effect on stray light of other wave bands is better.
The foregoing description is only an overview of the present utility model, and is intended to provide a better understanding of the present utility model, as it is embodied in the following description, with reference to the preferred embodiments of the present utility model and the accompanying drawings.
Drawings
Fig. 1 is a schematic diagram of a narrow band-pass avalanche photodiode according to a preferred embodiment of the present utility model.
Detailed Description
The following describes in further detail the embodiments of the present utility model with reference to the drawings and examples. The following examples are illustrative of the utility model and are not intended to limit the scope of the utility model.
Referring to fig. 1, a narrow band-pass avalanche photodiode 2 according to a preferred embodiment of the present utility model includes an avalanche photodiode 2, a packaging layer and a filter film, wherein the avalanche photodiode 2 (APD) is a photodetector with high gain, which is not described herein.
The avalanche photodiode 2 is mounted on the substrate 1, and specifically, the upper surface of the avalanche photodiode 2 is provided with an opening for incoming light, the opening communicating with the photosurface of the avalanche photodiode 2.
The encapsulation layer comprises a first encapsulation layer 3 which is arranged on the avalanche photodiode 2 in a cladding mode and a second encapsulation layer 4 which is arranged on the first encapsulation layer 3 in a cladding mode.
The narrow bandpass filter film comprises a first filter film 5 arranged on the upper surface of the first packaging layer 3 in the height direction of the avalanche photodiode 2 and a second filter film 6 arranged on the upper surface of the second packaging layer 4, wherein the first filter film 5 is arranged between the first packaging layer 3 and the second packaging layer 4.
The narrow-band-pass filter film comprises a band-pass antireflection film and a long-wave-pass filter film, one of the first filter film 5 and the second filter film 6 is the band-pass antireflection film, and the other is the long-wave-pass filter film. Specifically, the bandpass antireflection film and the long-wave pass filter film can be formed on the upper surface of the packaging layer by magnetron sputtering, electron beam evaporation or atomic layer deposition, wherein the first filter film 5 and the second filter film 6 can be bandpass antireflection films or long-wave pass filter films, and only the first filter film 5 and the second filter film 6 are required to be different, and the first filter film and the second filter film are required to be adjusted according to requirements, and the method is not limited herein.
In this embodiment, to reduce the interference of stray light in other bands, the first filter 5 is a long-pass filter, and the second filter 6 is a bandpass antireflection film.
In the present embodiment, in order to improve the filtering effect, the projection of the first filter film 5 in the height direction covers the upper surface of the avalanche photodiode 2, and the projection of the second filter film 6 in the height direction covers the first filter film 5. Specifically, the first filter film 5 is relatively closer to the avalanche photodiode 2, so that the first filter film 5 completely covers the upper surface of the avalanche photodiode 2, and thus the filtering effect on the incident light entering the avalanche photodiode 2 can be ensured. The second filter film 6 is relatively far away from the avalanche photodiode 2, and second, the first filter film 5 and the second filter film 6 are further provided with a second encapsulation layer 4, in order to ensure that the incident light entering the first filter film 5 is filtered by the second filter film 6, the second filter film 6 is disposed right above the first filter film 5, and the projection of the second filter film 6 in the height direction completely covers the first filter film 5, preferably, the projection area of the second filter film 6 is larger than the projection area of the first filter film 5, and the projection area of the first filter film 5 is larger than the area of the upper surface of the avalanche photodiode 2.
In this embodiment, to ensure the light transmission effect, the encapsulation layer is a resin structure. Specifically, the resin structure is a packaging layer formed by resin materials, the light transmittance is good, and the packaging layer is the prior art and is not described herein.
In this embodiment, for convenience of packaging, the first packaging layer 3 and the second packaging layer 4 are integrally formed on the peripheral side. Specifically, a first packaging layer 3 and a second packaging layer 4 are formed on the avalanche photodiode 2 and are coated on the packaging layer on the periphery of the first packaging layer 3, then a first optical filter film 5 is formed on the upper surface of the first packaging layer 3 by coating, the projection of the first optical filter film 5 in the high direction is overlapped with the upper surface of the avalanche photodiode 2, then the remaining packaging layers of the second packaging layer 4 are performed on the first optical filter film 5 and the first packaging layer 3, and finally a second optical filter film 6 is formed on the upper surface of the second packaging layer 4 by coating.
In this embodiment, to protect the avalanche photodiode 2, the bottom of the encapsulation layer is connected to the substrate 1. Specifically, the encapsulation layer is connected with the substrate 1 to form a protective sleeve, and is covered on the outer side of the avalanche photodiode 2, so that the avalanche photodiode 2 can be prevented from being damaged.
In this embodiment, the substrate 1 is a PCB board or a ceramic substrate 1. Specifically, the PCB board or the ceramic substrate 1 is a common control circuit board, which is a prior art and will not be described herein.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321154322.2U CN219800879U (en) | 2023-05-15 | 2023-05-15 | Narrow-band-pass avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321154322.2U CN219800879U (en) | 2023-05-15 | 2023-05-15 | Narrow-band-pass avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219800879U true CN219800879U (en) | 2023-10-03 |
Family
ID=88181754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321154322.2U Active CN219800879U (en) | 2023-05-15 | 2023-05-15 | Narrow-band-pass avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219800879U (en) |
-
2023
- 2023-05-15 CN CN202321154322.2U patent/CN219800879U/en active Active
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Effective date of registration: 20250314 Granted publication date: 20231003 |
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