CS180949B1 - Method of semiconducting element production - Google Patents

Method of semiconducting element production

Info

Publication number
CS180949B1
CS180949B1 CS7500007915A CS791575A CS180949B1 CS 180949 B1 CS180949 B1 CS 180949B1 CS 7500007915 A CS7500007915 A CS 7500007915A CS 791575 A CS791575 A CS 791575A CS 180949 B1 CS180949 B1 CS 180949B1
Authority
CS
Czechoslovakia
Prior art keywords
element production
semiconducting element
semiconducting
production
Prior art date
Application number
CS7500007915A
Other languages
Czech (cs)
Inventor
Stjapas S Janusonis
Bronjus-Vitautas B Beljauskas
Vida-Katrina J Serkuvene
Vladas K Banjulis
Original Assignee
Stjapas S Janusonis
Beljauskas Bronjus Vitautas B
Serkuvene Vida Katrina J
Vladas K Banjulis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU742076968A external-priority patent/SU653647A1/en
Priority claimed from SU7402076899A external-priority patent/SU521802A1/en
Application filed by Stjapas S Janusonis, Beljauskas Bronjus Vitautas B, Serkuvene Vida Katrina J, Vladas K Banjulis filed Critical Stjapas S Janusonis
Publication of CS180949B1 publication Critical patent/CS180949B1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
CS7500007915A 1974-11-25 1975-11-21 Method of semiconducting element production CS180949B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU742076968A SU653647A1 (en) 1974-11-25 1974-11-25 Method of forming base source at manufacturing transistor structures
SU7402076899A SU521802A1 (en) 1974-11-25 1974-11-25 Method of selective forming of base source at making transistor structures

Publications (1)

Publication Number Publication Date
CS180949B1 true CS180949B1 (en) 1978-02-28

Family

ID=26665540

Family Applications (1)

Application Number Title Priority Date Filing Date
CS7500007915A CS180949B1 (en) 1974-11-25 1975-11-21 Method of semiconducting element production

Country Status (5)

Country Link
CS (1) CS180949B1 (en)
DD (1) DD121429A5 (en)
DE (1) DE2552641B2 (en)
FR (1) FR2292333A1 (en)
HU (1) HU172486B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (en) * 1979-04-20 1980-11-14 Radiotechnique Compelec METHOD FOR PRODUCING INTEGRATED CIRCUITS USING A MULTILAYER MASK AND DEVICES OBTAINED BY THIS METHOD

Also Published As

Publication number Publication date
HU172486B (en) 1978-09-28
DD121429A5 (en) 1976-07-20
FR2292333A1 (en) 1976-06-18
DE2552641B2 (en) 1979-03-29
DE2552641A1 (en) 1976-06-10
FR2292333B1 (en) 1979-02-02

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