CS213611B1 - Nuclear reactor from the cadmium telluride - Google Patents
Nuclear reactor from the cadmium telluride Download PDFInfo
- Publication number
- CS213611B1 CS213611B1 CS768748A CS874876A CS213611B1 CS 213611 B1 CS213611 B1 CS 213611B1 CS 768748 A CS768748 A CS 768748A CS 874876 A CS874876 A CS 874876A CS 213611 B1 CS213611 B1 CS 213611B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- cadmium telluride
- insulating layer
- single crystal
- detector
- nuclear reactor
- Prior art date
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 13
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 3
- 230000005865 ionizing radiation Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005025 nuclear technology Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BG3197375 | 1975-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS213611B1 true CS213611B1 (en) | 1982-04-09 |
Family
ID=3901839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS768748A CS213611B1 (en) | 1975-12-30 | 1976-12-29 | Nuclear reactor from the cadmium telluride |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5292577A (ja) |
| CA (1) | CA1080372A (ja) |
| CS (1) | CS213611B1 (ja) |
| FR (1) | FR2337435A1 (ja) |
| GB (1) | GB1511410A (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149983A (en) * | 1981-03-12 | 1982-09-16 | Yokogawa Hokushin Electric Corp | Radiation detector |
| JPS62115391A (ja) * | 1985-11-13 | 1987-05-27 | Nippon Mining Co Ltd | CdTe放射線検出器 |
| JPS62226082A (ja) * | 1986-03-28 | 1987-10-05 | Yokogawa Electric Corp | β線検出装置 |
| FR2738080B1 (fr) * | 1995-08-24 | 1997-10-31 | Commissariat Energie Atomique | Dispositif de detection de rayons x a base de semi-conducteurs |
| WO2000003266A1 (en) * | 1998-07-09 | 2000-01-20 | Mitsubishi Denki Kabushiki Kaisha | Radiation detector |
-
1976
- 1976-12-22 FR FR7638680A patent/FR2337435A1/fr active Granted
- 1976-12-22 JP JP15480676A patent/JPS5292577A/ja active Pending
- 1976-12-29 CS CS768748A patent/CS213611B1/cs unknown
- 1976-12-30 CA CA268,955A patent/CA1080372A/en not_active Expired
- 1976-12-30 GB GB54340/76A patent/GB1511410A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1080372A (en) | 1980-06-24 |
| FR2337435B3 (ja) | 1979-08-31 |
| GB1511410A (en) | 1978-05-17 |
| JPS5292577A (en) | 1977-08-04 |
| FR2337435A1 (fr) | 1977-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6350989B1 (en) | Wafer-fused semiconductor radiation detector | |
| US7060523B2 (en) | Lithium-drifted silicon detector with segmented contacts | |
| GB1241379A (en) | Improvements in or relating to target structures for cathode ray tubes | |
| US2885562A (en) | Photoelectric device | |
| Kang et al. | The silicon vertex detector of the Belle II experiment | |
| US3390449A (en) | Method for preparation and encapsulation of germanium gamma ray detectors | |
| Tavendale | Semiconductor lithium-ion drift diodes as high-resolution gamma-ray pair spectrometers | |
| CS213611B1 (en) | Nuclear reactor from the cadmium telluride | |
| CN110611009B (zh) | 嵌套式三维沟槽电极硅探测器 | |
| US4056726A (en) | Coaxial gamma ray detector and method therefor | |
| US3863072A (en) | Semiconductor localization detector | |
| US4689649A (en) | Semiconductor radiation detector | |
| US4122345A (en) | Semiconductor detector for detecting ionizing radiation | |
| RU2061282C1 (ru) | Полупроводниковый детектор ионизирующего излучения | |
| US3086117A (en) | Semiconductive dosimeters | |
| JPH0550857B2 (ja) | ||
| JPS6161708B2 (ja) | ||
| US3320495A (en) | Surface-barrier diode for detecting high energy particles and method for preparing same | |
| JP3688933B2 (ja) | 放射線検出器 | |
| CN108511554B (zh) | 一种方形复合式壳型电极半导体探测器的制备方法 | |
| Drummond | High Purity Germanium Radiation Detectors | |
| Williams et al. | Electron Emission from The Schottky Barrier Structure ZnS: Pt: Cs | |
| Kalma et al. | Ionizing radiation effects in HgCdTe MIS capacitors | |
| Dearnaley | Semiconductor nuclear radiation detectors | |
| JP3644306B2 (ja) | 放射線検出器 |