DD136670A1 - Verfahren und vorrichtung zur herstellung von halbleiterstrukturen - Google Patents

Verfahren und vorrichtung zur herstellung von halbleiterstrukturen

Info

Publication number
DD136670A1
DD136670A1 DD76191181A DD19118176A DD136670A1 DD 136670 A1 DD136670 A1 DD 136670A1 DD 76191181 A DD76191181 A DD 76191181A DD 19118176 A DD19118176 A DD 19118176A DD 136670 A1 DD136670 A1 DD 136670A1
Authority
DD
German Democratic Republic
Prior art keywords
semiconductor structures
producing semiconductor
producing
structures
semiconductor
Prior art date
Application number
DD76191181A
Other languages
English (en)
Inventor
Rudolf Sacher
Original Assignee
Rudolf Sacher
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rudolf Sacher filed Critical Rudolf Sacher
Priority to DD76191181A priority Critical patent/DD136670A1/de
Priority to DE19772701356 priority patent/DE2701356A1/de
Priority to SE7700374A priority patent/SE7700374L/xx
Priority to GB25964/78A priority patent/GB1597595A/en
Priority to GB2738/77A priority patent/GB1597594A/en
Priority to JP820077A priority patent/JPS52155064A/ja
Priority to FR7702648A priority patent/FR2340565A1/fr
Priority to CS77725A priority patent/CS209199B1/cs
Publication of DD136670A1 publication Critical patent/DD136670A1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
DD76191181A 1976-02-04 1976-02-04 Verfahren und vorrichtung zur herstellung von halbleiterstrukturen DD136670A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DD76191181A DD136670A1 (de) 1976-02-04 1976-02-04 Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
DE19772701356 DE2701356A1 (de) 1976-02-04 1977-01-14 Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
SE7700374A SE7700374L (sv) 1976-02-04 1977-01-14 Sett coh anordning for framstellning av halvledarestrukturer
GB25964/78A GB1597595A (en) 1976-02-04 1977-01-24 Manufacture of semiconductor elements
GB2738/77A GB1597594A (en) 1976-02-04 1977-01-24 Manufacture of semiconductor elements
JP820077A JPS52155064A (en) 1976-02-04 1977-01-27 Method of manufacturing semiconductor structure and apparatus therefor
FR7702648A FR2340565A1 (fr) 1976-02-04 1977-01-31 Procede et installation pour la fabrication de composants semi-conducteurs
CS77725A CS209199B1 (cs) 1976-02-04 1977-02-03 Zařízení k výrobě polovodičových struktur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD76191181A DD136670A1 (de) 1976-02-04 1976-02-04 Verfahren und vorrichtung zur herstellung von halbleiterstrukturen

Publications (1)

Publication Number Publication Date
DD136670A1 true DD136670A1 (de) 1979-07-18

Family

ID=5503510

Family Applications (1)

Application Number Title Priority Date Filing Date
DD76191181A DD136670A1 (de) 1976-02-04 1976-02-04 Verfahren und vorrichtung zur herstellung von halbleiterstrukturen

Country Status (7)

Country Link
JP (1) JPS52155064A (de)
CS (1) CS209199B1 (de)
DD (1) DD136670A1 (de)
DE (1) DE2701356A1 (de)
FR (1) FR2340565A1 (de)
GB (2) GB1597595A (de)
SE (1) SE7700374L (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325182A (en) * 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US5266409A (en) * 1989-04-28 1993-11-30 Digital Equipment Corporation Hydrogenated carbon compositions
US5281851A (en) * 1992-10-02 1994-01-25 Hewlett-Packard Company Integrated circuit packaging with reinforced leads

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
DE2115823C3 (de) * 1971-04-01 1975-09-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von Mikrostrukturen auf einer Halbleiterscheibe
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
NL7413977A (nl) * 1974-10-25 1976-04-27 Philips Nv Aanbrengen van een geleiderlaagpatroon met op een geringe onderlinge afstand gelegen delen, in het bijzonder bij de vervaardiging van half- geleiderinrichtingen.
DE2554638A1 (de) * 1975-12-04 1977-06-16 Siemens Ag Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes

Also Published As

Publication number Publication date
GB1597594A (en) 1981-09-09
FR2340565A1 (fr) 1977-09-02
SE7700374L (sv) 1977-08-05
CS209199B1 (cs) 1981-11-30
DE2701356A1 (de) 1977-08-18
GB1597595A (en) 1981-09-09
JPS52155064A (en) 1977-12-23

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