Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
  • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
  • H10D62/148—Cathode regions of thyristors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
  • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Applications Claiming Priority (1)

Publications (1)

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Family Applications (1)

Country Status (3)

Families Citing this family (2)

• 1977
  • 1977-08-02 CS CS775127A patent/CS192827B1/cs unknown
• 1978
  • 1978-07-28 DD DD78207006A patent/DD137640A1/xx not_active IP Right Cessation
  • 1978-08-02 DE DE19782833917 patent/DE2833917A1/de not_active Ceased

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