DD153497A3 - Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd - Google Patents
Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd Download PDFInfo
- Publication number
- DD153497A3 DD153497A3 DD21895680A DD21895680A DD153497A3 DD 153497 A3 DD153497 A3 DD 153497A3 DD 21895680 A DD21895680 A DD 21895680A DD 21895680 A DD21895680 A DD 21895680A DD 153497 A3 DD153497 A3 DD 153497A3
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- plasma
- electrodes
- recipient
- substrates
- electrode
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000001020 plasma etching Methods 0.000 claims abstract description 6
- 230000001419 dependent effect Effects 0.000 claims abstract description 5
- 239000007787 solid Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 5
- 238000003486 chemical etching Methods 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000011368 organic material Substances 0.000 abstract description 2
- 239000002912 waste gas Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- -1 chlorine hydrocarbons Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32587—Triode systems
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD21895680A DD153497A3 (de) | 1980-02-08 | 1980-02-08 | Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd |
| CS809279A CS927980A1 (en) | 1980-02-08 | 1980-12-22 | Zpusob a zarizeni k plazmovemu leptani nebo k chemickemu plazmovemu odparovani v parni fazi |
| DE8181100455T DE3163337D1 (en) | 1980-02-08 | 1981-01-22 | Process and apparatus for ion etching or for plasma c.v.d. |
| EP81100455A EP0034706B1 (de) | 1980-02-08 | 1981-01-22 | Verfahren und Vorrichtung zum Plasmaätzen oder zur Plasma CVD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD21895680A DD153497A3 (de) | 1980-02-08 | 1980-02-08 | Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD153497A3 true DD153497A3 (de) | 1982-01-13 |
Family
ID=5522614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD21895680A DD153497A3 (de) | 1980-02-08 | 1980-02-08 | Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0034706B1 (cs) |
| CS (1) | CS927980A1 (cs) |
| DD (1) | DD153497A3 (cs) |
| DE (1) | DE3163337D1 (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3308222A1 (de) * | 1982-01-06 | 1984-09-13 | Drytek, Inc., Wilmington, Mass. | Vorrichtung zur behandlung von werkstuecken mit gasplasma |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4496448A (en) * | 1983-10-13 | 1985-01-29 | At&T Bell Laboratories | Method for fabricating devices with DC bias-controlled reactive ion etching |
| US4626447A (en) * | 1985-03-18 | 1986-12-02 | Energy Conversion Devices, Inc. | Plasma confining apparatus |
| US4637853A (en) * | 1985-07-29 | 1987-01-20 | International Business Machines Corporation | Hollow cathode enhanced plasma for high rate reactive ion etching and deposition |
| FR2589168B1 (fr) * | 1985-10-25 | 1992-07-17 | Solems Sa | Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma |
| US4657619A (en) * | 1985-11-29 | 1987-04-14 | Donnell Kevin P O | Diverter magnet arrangement for plasma processing system |
| JPH0351971Y2 (cs) * | 1988-05-12 | 1991-11-08 | ||
| JPH029115A (ja) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
| JP6185222B2 (ja) | 2008-11-25 | 2017-08-23 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツングＳｏｌｖａｙ Ｆｌｕｏｒ ＧｍｂＨ | 防食性フラックス |
| DE202010017865U1 (de) | 2010-02-10 | 2013-01-16 | Solvay Fluor Gmbh | Flussmittel zur Bildung eines nichtlöslichen Lötrückstandes |
| CN102741013B (zh) | 2010-02-10 | 2015-12-16 | 苏威氟有限公司 | 焊剂、焊剂组合物、用于钎焊的方法以及钎焊的铝部件 |
| DE102011013467A1 (de) * | 2011-03-09 | 2012-09-13 | Manz Ag | Vorrichtung und Verfahren zum plasmaunterstützten Behandeln zumindest zweier Substrate |
| DE102014011933A1 (de) * | 2014-08-14 | 2016-02-18 | Manz Ag | Plasmabehandlungsvorrichtung und Verfahren zur Oberflächenbehandlung von Substraten |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1391842A (en) * | 1971-08-04 | 1975-04-23 | Elektromat Veb | Apparatus for coating substrates by cathode sputtering and for cleaning by ion bombardment in the same vacuum vessel |
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
| DE2541719C3 (de) * | 1975-09-18 | 1980-10-16 | Vjatscheslav Michajlovitsch Goljanov | Einrichtung zur Herstellung von Schichten durch Kathodenzerstäubung von Werkstoffen mittels Ionen |
| JPS53112066A (en) * | 1977-03-11 | 1978-09-30 | Fujitsu Ltd | Plasma treatment apparatus |
| JPS5846057B2 (ja) * | 1979-03-19 | 1983-10-14 | 富士通株式会社 | プラズマ処理方法 |
-
1980
- 1980-02-08 DD DD21895680A patent/DD153497A3/de not_active IP Right Cessation
- 1980-12-22 CS CS809279A patent/CS927980A1/cs unknown
-
1981
- 1981-01-22 EP EP81100455A patent/EP0034706B1/de not_active Expired
- 1981-01-22 DE DE8181100455T patent/DE3163337D1/de not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3308222A1 (de) * | 1982-01-06 | 1984-09-13 | Drytek, Inc., Wilmington, Mass. | Vorrichtung zur behandlung von werkstuecken mit gasplasma |
Also Published As
| Publication number | Publication date |
|---|---|
| CS927980A1 (en) | 1984-01-16 |
| EP0034706B1 (de) | 1984-05-02 |
| EP0034706A3 (en) | 1981-09-09 |
| DE3163337D1 (en) | 1984-06-07 |
| EP0034706A2 (de) | 1981-09-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ENJ | Ceased due to non-payment of renewal fee |