DD290078A5 - Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode - Google Patents

Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode Download PDF

Info

Publication number: DD290078A5
Authority: DD; German Democratic Republic
Prior art keywords: layer; inp; type; gainasp; advantageously
Prior art date: 1988-12-15

Application number

DD89335747A

Other languages

German (de)

English (en)

Inventor

Vilmos Rakovics

Oedoen Lendvay

Zoltan Labadi

Istvan Habenmayer

Original Assignee

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Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-12-15

Filing date

1989-12-15

Publication date

1991-05-16

1989-12-15 Application filed by ��@��@��@��@��@��@��k�� filed Critical ��@��@��@��@��@��@��k��

1991-05-16 Publication of DD290078A5 publication Critical patent/DD290078A5/de

Links

238000000034 method Methods 0.000 title description 6
238000002360 preparation method Methods 0.000 title description 2
230000007704 transition Effects 0.000 title description 2
239000002184 metal Substances 0.000 claims abstract description 14
229910052751 metal Inorganic materials 0.000 claims abstract description 14
238000004519 manufacturing process Methods 0.000 claims abstract description 11
239000000126 substance Substances 0.000 claims abstract description 3
230000000903 blocking effect Effects 0.000 claims abstract 4
238000005530 etching Methods 0.000 claims description 13
238000000407 epitaxy Methods 0.000 claims description 11
239000013589 supplement Substances 0.000 claims description 8
238000001704 evaporation Methods 0.000 claims description 6
230000008020 evaporation Effects 0.000 claims description 5
238000010438 heat treatment Methods 0.000 claims description 5
239000000203 mixture Substances 0.000 claims description 5
239000007789 gas Substances 0.000 claims description 4
238000003776 cleavage reaction Methods 0.000 claims description 3
239000013078 crystal Substances 0.000 claims description 3
229910052737 gold Inorganic materials 0.000 claims description 3
238000001465 metallisation Methods 0.000 claims description 3
238000002156 mixing Methods 0.000 claims description 3
230000007017 scission Effects 0.000 claims description 3
239000002966 varnish Substances 0.000 claims description 3
MNZMECMQTYGSOI-UHFFFAOYSA-N acetic acid;hydron;bromide Chemical compound Br.CC(O)=O MNZMECMQTYGSOI-UHFFFAOYSA-N 0.000 claims description 2
238000000206 photolithography Methods 0.000 claims description 2
229920002120 photoresistant polymer Polymers 0.000 claims 1
238000007747 plating Methods 0.000 claims 1
229910017401 Au—Ge Inorganic materials 0.000 abstract description 4
230000004888 barrier function Effects 0.000 abstract description 3
230000009977 dual effect Effects 0.000 abstract description 2
239000000969 carrier Substances 0.000 abstract 1
230000015556 catabolic process Effects 0.000 abstract 1
239000010931 gold Substances 0.000 description 11
OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 7
239000007788 liquid Substances 0.000 description 6
238000001816 cooling Methods 0.000 description 5
CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 4
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
229910000673 Indium arsenide Inorganic materials 0.000 description 3
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
239000000463 material Substances 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
238000010276 construction Methods 0.000 description 2
238000009826 distribution Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
229910000042 hydrogen bromide Inorganic materials 0.000 description 2
239000000155 melt Substances 0.000 description 2
239000013307 optical fiber Substances 0.000 description 2
230000005855 radiation Effects 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
206010000210 abortion Diseases 0.000 description 1
231100000176 abortion Toxicity 0.000 description 1
125000000217 alkyl group Chemical group 0.000 description 1
239000000956 alloy Substances 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000005496 eutectics Effects 0.000 description 1
239000000835 fiber Substances 0.000 description 1
238000011049 filling Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
239000004922 lacquer Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
238000010297 mechanical methods and process Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
125000000896 monocarboxylic acid group Chemical group 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000003973 paint Substances 0.000 description 1
238000005498 polishing Methods 0.000 description 1
239000000843 powder Substances 0.000 description 1
230000006798 recombination Effects 0.000 description 1
238000005215 recombination Methods 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
238000003860 storage Methods 0.000 description 1
QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
-1 sulfuric acid peroxide Chemical class 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
238000005979 thermal decomposition reaction Methods 0.000 description 1
229910052718 tin Inorganic materials 0.000 description 1
238000002604 ultrasonography Methods 0.000 description 1
238000007738 vacuum evaporation Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Geometry (AREA)
Semiconductor Lasers (AREA)

DD89335747A 1988-12-15 1989-12-15 Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode DD290078A5 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
HU886432A HU206565B (en)	1988-12-15	1988-12-15	Inp/gainasp laser diode of burried active layer, having built-in blocking layer, of double heterostructure and method for making said laser diode by one-stage liquid epitaxial procedure

Publications (1)

Publication Number	Publication Date
DD290078A5 true DD290078A5 (de)	1991-05-16

Family

ID=10971624

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DD89335747A DD290078A5 (de)	1988-12-15	1989-12-15	Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode

Country Status (7)

Country	Link
EP (1)	EP0373637A3 (fr)
JP (1)	JPH03136289A (fr)
KR (1)	KR940007604B1 (fr)
CA (1)	CA2005555A1 (fr)
DD (1)	DD290078A5 (fr)
HU (1)	HU206565B (fr)
IL (1)	IL92701A0 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5341001A (en) *	1992-02-13	1994-08-23	Matsushita Electric Industrial Co., Ltd.	Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
JPH07288361A (ja) *	1994-04-18	1995-10-31	Nec Kansai Ltd	半導体レーザ及びその製造方法
JP2699888B2 (ja) *	1994-09-20	1998-01-19	日本電気株式会社	埋め込み型ｐ型基板半導体レーザ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5864084A (ja) *	1981-10-13	1983-04-16	Nec Corp	半導体レ−ザ
DE3277278D1 (en) *	1981-10-19	1987-10-15	Nec Corp	Double channel planar buried heterostructure laser

1988
- 1988-12-15 HU HU886432A patent/HU206565B/hu not_active IP Right Cessation
1989
- 1989-12-13 EP EP19890123072 patent/EP0373637A3/fr not_active Withdrawn
- 1989-12-14 CA CA002005555A patent/CA2005555A1/fr not_active Abandoned
- 1989-12-14 IL IL92701A patent/IL92701A0/xx unknown
- 1989-12-15 KR KR1019890018779A patent/KR940007604B1/ko not_active Expired - Lifetime
- 1989-12-15 JP JP1324112A patent/JPH03136289A/ja active Pending
- 1989-12-15 DD DD89335747A patent/DD290078A5/de not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPH03136289A (ja)	1991-06-11
EP0373637A3 (fr)	1990-12-27
KR940007604B1 (ko)	1994-08-20
CA2005555A1 (fr)	1990-06-15
EP0373637A2 (fr)	1990-06-20
HU206565B (en)	1992-11-30
IL92701A0 (en)	1990-09-17
KR900011085A (ko)	1990-07-11
HUT55924A (en)	1991-06-28

Legal Events

Date	Code	Title	Description
1995-06-22	ENJ	Ceased due to non-payment of renewal fee

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