DE102004015231A1 - Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss - Google Patents
Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss Download PDFInfo
- Publication number
- DE102004015231A1 DE102004015231A1 DE200410015231 DE102004015231A DE102004015231A1 DE 102004015231 A1 DE102004015231 A1 DE 102004015231A1 DE 200410015231 DE200410015231 DE 200410015231 DE 102004015231 A DE102004015231 A DE 102004015231A DE 102004015231 A1 DE102004015231 A1 DE 102004015231A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- impinging
- treat
- vacuum chamber
- charge carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Die Erfindung betrifft eine Vorrichtung und ein Verfahren zum Beaufschlagen von mindestens einem Substrat (3) mit elektrischen Ladungsträgern in einer Vakuumkammer (1) zum Zwecke der Oberflächenbehandlung, wobei zwischen mindestens einer Elektronenemissionseinrichtung (5) und mindestens einer als Anode geschalteten Elektrode (11) eine stromstarke Gasentladung ausgebildet wird, wobei das Substrat (3) in Nähe der Elektrode (11) in einem Bereich (17) der Gasentladung angeordnet oder durch diesen Bereich (17) bewegt wird, wobei die Elektrode (11) von einem tunnelförmig in sich geschlossenen Magnetfeld (13) in der Art einer Magnetronkatode mit einer Feldstärke von mindestens 10 A/m durchdrungen wird und das Substrat (3) mit einer elektrischen Spannung gegenüber der Elektrode beaufschlagt wird, welche im Zeitverlauf überwiegend negative Werte aufweist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004015231.4A DE102004015231B4 (de) | 2004-03-29 | 2004-03-29 | Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004015231.4A DE102004015231B4 (de) | 2004-03-29 | 2004-03-29 | Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102004015231A1 true DE102004015231A1 (de) | 2005-10-20 |
| DE102004015231B4 DE102004015231B4 (de) | 2015-12-31 |
Family
ID=35033937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102004015231.4A Expired - Fee Related DE102004015231B4 (de) | 2004-03-29 | 2004-03-29 | Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE102004015231B4 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013225608A1 (de) | 2013-12-11 | 2015-06-11 | Apo Gmbh Massenkleinteilbeschichtung | Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma |
| EP3012856A1 (de) | 2014-10-24 | 2016-04-27 | CemeCon AG | Verfahren und vorrichtung zur erzeugung einer elektrischen entladung |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2964735D1 (en) * | 1978-10-09 | 1983-03-17 | Asu Composants Sa | Cathodic sputtering method for depositing an autolubricant coating of metallic chalcogenides onto substrates |
| WO1990002216A1 (en) * | 1988-08-25 | 1990-03-08 | Vac-Tec Systems, Inc. | Physical vapor deposition dual coating apparatus and process |
| DE4125365C1 (de) * | 1991-07-31 | 1992-05-21 | Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De | |
| JP4355036B2 (ja) * | 1997-03-18 | 2009-10-28 | キヤノンアネルバ株式会社 | イオン化スパッタリング装置 |
| DE19830404B4 (de) * | 1998-07-08 | 2004-07-22 | Von Ardenne Anlagentechnik Gmbh | Vorrichtung zur Sputterbeschichtung mit variierbarem Plasmapotential |
| DE19902146C2 (de) * | 1999-01-20 | 2003-07-31 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur gepulsten Plasmaaktivierung |
| DE10314932A1 (de) * | 2002-04-17 | 2003-11-06 | Cemecon Ag | Zerstäubungseinrichtung |
-
2004
- 2004-03-29 DE DE102004015231.4A patent/DE102004015231B4/de not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013225608A1 (de) | 2013-12-11 | 2015-06-11 | Apo Gmbh Massenkleinteilbeschichtung | Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma |
| EP2884824A1 (de) | 2013-12-11 | 2015-06-17 | APO GmbH Massenkleinteilbeschichtung | Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma |
| EP3012856A1 (de) | 2014-10-24 | 2016-04-27 | CemeCon AG | Verfahren und vorrichtung zur erzeugung einer elektrischen entladung |
| DE102014115492A1 (de) | 2014-10-24 | 2016-04-28 | Cemecon Ag | Verfahren und Vorrichtung zur Erzeugung einer elektronischen Entladung |
| US9773650B2 (en) | 2014-10-24 | 2017-09-26 | Cemecon Ag | Method and device for generating an electrical discharge |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102004015231B4 (de) | 2015-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| R012 | Request for examination validly filed |
Effective date: 20110201 |
|
| 8125 | Change of the main classification |
Ipc: C23C 14/02 AFI20051017BHDE |
|
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: C23F0004000000 Ipc: C23C0014020000 Effective date: 20110310 |
|
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: C23C0014020000 Ipc: H05H0001460000 |
|
| R016 | Response to examination communication | ||
| R018 | Grant decision by examination section/examining division | ||
| R020 | Patent grant now final | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |