DE102004015231A1 - Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss - Google Patents

Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss Download PDF

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Publication number
DE102004015231A1
DE102004015231A1 DE200410015231 DE102004015231A DE102004015231A1 DE 102004015231 A1 DE102004015231 A1 DE 102004015231A1 DE 200410015231 DE200410015231 DE 200410015231 DE 102004015231 A DE102004015231 A DE 102004015231A DE 102004015231 A1 DE102004015231 A1 DE 102004015231A1
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Germany
Prior art keywords
substrate
impinging
treat
vacuum chamber
charge carriers
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DE200410015231
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English (en)
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DE102004015231B4 (de
Inventor
Heidrun Klostermann
Fred Fietzke
Klaus Goedicke
Tilo Wuensche
Bernd-Georg Boecher
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Priority to DE102004015231.4A priority Critical patent/DE102004015231B4/de
Publication of DE102004015231A1 publication Critical patent/DE102004015231A1/de
Application granted granted Critical
Publication of DE102004015231B4 publication Critical patent/DE102004015231B4/de
Anticipated expiration legal-status Critical
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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354Introduction of auxiliary energy into the plasma
    • C23C14/355Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3435Applying energy to the substrate during sputtering
    • C23C14/345Applying energy to the substrate during sputtering using substrate bias
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft eine Vorrichtung und ein Verfahren zum Beaufschlagen von mindestens einem Substrat (3) mit elektrischen Ladungsträgern in einer Vakuumkammer (1) zum Zwecke der Oberflächenbehandlung, wobei zwischen mindestens einer Elektronenemissionseinrichtung (5) und mindestens einer als Anode geschalteten Elektrode (11) eine stromstarke Gasentladung ausgebildet wird, wobei das Substrat (3) in Nähe der Elektrode (11) in einem Bereich (17) der Gasentladung angeordnet oder durch diesen Bereich (17) bewegt wird, wobei die Elektrode (11) von einem tunnelförmig in sich geschlossenen Magnetfeld (13) in der Art einer Magnetronkatode mit einer Feldstärke von mindestens 10 A/m durchdrungen wird und das Substrat (3) mit einer elektrischen Spannung gegenüber der Elektrode beaufschlagt wird, welche im Zeitverlauf überwiegend negative Werte aufweist.
DE102004015231.4A 2004-03-29 2004-03-29 Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss Expired - Fee Related DE102004015231B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102004015231.4A DE102004015231B4 (de) 2004-03-29 2004-03-29 Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004015231.4A DE102004015231B4 (de) 2004-03-29 2004-03-29 Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss

Publications (2)

Publication Number Publication Date
DE102004015231A1 true DE102004015231A1 (de) 2005-10-20
DE102004015231B4 DE102004015231B4 (de) 2015-12-31

Family

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Family Applications (1)

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DE102004015231.4A Expired - Fee Related DE102004015231B4 (de) 2004-03-29 2004-03-29 Verfahren und Vorrichtung zum Behandeln von Substratoberflächen mittels Ladungsträgerbeschuss

Country Status (1)

Country Link
DE (1) DE102004015231B4 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013225608A1 (de) 2013-12-11 2015-06-11 Apo Gmbh Massenkleinteilbeschichtung Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma
EP3012856A1 (de) 2014-10-24 2016-04-27 CemeCon AG Verfahren und vorrichtung zur erzeugung einer elektrischen entladung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2964735D1 (en) * 1978-10-09 1983-03-17 Asu Composants Sa Cathodic sputtering method for depositing an autolubricant coating of metallic chalcogenides onto substrates
WO1990002216A1 (en) * 1988-08-25 1990-03-08 Vac-Tec Systems, Inc. Physical vapor deposition dual coating apparatus and process
DE4125365C1 (de) * 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
JP4355036B2 (ja) * 1997-03-18 2009-10-28 キヤノンアネルバ株式会社 イオン化スパッタリング装置
DE19830404B4 (de) * 1998-07-08 2004-07-22 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur Sputterbeschichtung mit variierbarem Plasmapotential
DE19902146C2 (de) * 1999-01-20 2003-07-31 Fraunhofer Ges Forschung Verfahren und Einrichtung zur gepulsten Plasmaaktivierung
DE10314932A1 (de) * 2002-04-17 2003-11-06 Cemecon Ag Zerstäubungseinrichtung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013225608A1 (de) 2013-12-11 2015-06-11 Apo Gmbh Massenkleinteilbeschichtung Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma
EP2884824A1 (de) 2013-12-11 2015-06-17 APO GmbH Massenkleinteilbeschichtung Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma
EP3012856A1 (de) 2014-10-24 2016-04-27 CemeCon AG Verfahren und vorrichtung zur erzeugung einer elektrischen entladung
DE102014115492A1 (de) 2014-10-24 2016-04-28 Cemecon Ag Verfahren und Vorrichtung zur Erzeugung einer elektronischen Entladung
US9773650B2 (en) 2014-10-24 2017-09-26 Cemecon Ag Method and device for generating an electrical discharge

Also Published As

Publication number Publication date
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