ATE535629T1 - Gepulstes hochleistungs-magnetronsputterverfahren sowie hochleistungs-elektroenergiequelle - Google Patents

Gepulstes hochleistungs-magnetronsputterverfahren sowie hochleistungs-elektroenergiequelle

Info

Publication number
ATE535629T1
ATE535629T1 AT09159717T AT09159717T ATE535629T1 AT E535629 T1 ATE535629 T1 AT E535629T1 AT 09159717 T AT09159717 T AT 09159717T AT 09159717 T AT09159717 T AT 09159717T AT E535629 T1 ATE535629 T1 AT E535629T1
Authority
AT
Austria
Prior art keywords
pulse
high power
time
energy source
power
Prior art date
Application number
AT09159717T
Other languages
English (en)
Inventor
Jones Alami
Georg Erkens
Juergen Mueller
Joerg Vetter
Original Assignee
Sulzer Metaplas Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sulzer Metaplas Gmbh filed Critical Sulzer Metaplas Gmbh
Application granted granted Critical
Publication of ATE535629T1 publication Critical patent/ATE535629T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
AT09159717T 2008-07-29 2009-05-08 Gepulstes hochleistungs-magnetronsputterverfahren sowie hochleistungs-elektroenergiequelle ATE535629T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08161322 2008-07-29

Publications (1)

Publication Number Publication Date
ATE535629T1 true ATE535629T1 (de) 2011-12-15

Family

ID=39892270

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09159717T ATE535629T1 (de) 2008-07-29 2009-05-08 Gepulstes hochleistungs-magnetronsputterverfahren sowie hochleistungs-elektroenergiequelle

Country Status (5)

Country Link
US (1) US9551066B2 (de)
EP (1) EP2157205B1 (de)
JP (2) JP6042048B2 (de)
AT (1) ATE535629T1 (de)
PL (1) PL2157205T3 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249498B2 (en) * 2010-06-28 2016-02-02 Micron Technology, Inc. Forming memory using high power impulse magnetron sputtering
JP5765627B2 (ja) * 2010-09-27 2015-08-19 日立金属株式会社 耐久性に優れる被覆工具およびその製造方法
BRPI1102336B1 (pt) * 2011-05-27 2021-01-12 Mahle Metal Leve S/A elemento dotado de pelo menos uma superfície de deslizamento para uso em um motor de combustão
BRPI1102335A2 (pt) 2011-05-27 2013-06-25 Mahle Metal Leve Sa elemento dotado de pelo menos uma superfÍcie de deslizamento com um revestimento para uso em um motor de combustço interna ou em um compressor
EP2867386A1 (de) * 2012-06-29 2015-05-06 Oerlikon Advanced Technologies AG Verfahren zum beschichten durch gepulstes bipolares sputtern
DE102012107163A1 (de) 2012-08-03 2014-05-15 INI Coatings Ltd. Verfahren zur Beschichtung eines Substrats mittels Hochenergieimpulsmagnetronsputtern
WO2014122250A1 (en) * 2013-02-08 2014-08-14 Oerlikon Advanced Technologies Ag Method of hipims sputtering and hipims sputter system
DE102013106351A1 (de) 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
ES2636867T3 (es) * 2013-06-26 2017-10-09 Oerlikon Surface Solutions Ag, Pfäffikon Procedimiento para la fabricación de capas decorativas de material duro por HIPIMS
PL3017079T5 (pl) * 2013-07-03 2020-12-28 Oerlikon Surface Solutions Ag, Pfäffikon Sposób wytwarzania warstw tixsi1-xn
JP2016084508A (ja) * 2014-10-27 2016-05-19 株式会社アルバック 金属膜成膜方法
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
TWI575119B (zh) * 2015-04-28 2017-03-21 遠東科技大學 鋁基鍋具之導磁層加工方法
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
RU2649904C1 (ru) * 2016-11-18 2018-04-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Устройство для синтеза и осаждения металлических покрытий на токопроводящих изделиях
WO2018206100A1 (en) * 2017-05-10 2018-11-15 Applied Materials, Inc. Pulsed dc power supply
EP3639356B1 (de) * 2017-06-12 2025-12-17 Starfire Industries, LLC Gepulstes leistungsmodul mit impuls- und ionenflussregelung für magnetron-sputtern
KR102141684B1 (ko) 2018-08-24 2020-09-14 한국원자력연구원 전류 펄스를 제어하는 모듈레이터 및 그 방법
SE542881C2 (en) * 2018-12-27 2020-08-04 Nils Brenning Ion thruster and method for providing thrust
CN120866780A (zh) * 2019-02-25 2025-10-31 星火工业有限公司 用于事故耐受核燃料、粒子加速器、和航空航天前沿的金属和陶瓷纳米涂层的方法和设备
CN114597109B (zh) * 2020-12-07 2025-05-27 中国科学院大连化学物理研究所 平面射频感性耦合放电等离子体加强型吸气剂装置
EP4531074A1 (de) * 2023-09-29 2025-04-02 Centre National de la Recherche Scientifique Schnelle hochspannung zur ionisierungsverbesserung für das sputterverfahren
WO2025225652A1 (ja) * 2024-04-23 2025-10-30 パナソニックＩｐマネジメント株式会社 評価システム、評価方法、プログラム

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700633C2 (de) 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
DE4127317C2 (de) * 1991-08-17 1999-09-02 Leybold Ag Einrichtung zum Behandeln von Substraten
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
EP0639655B1 (de) * 1993-07-28 2000-09-27 Asahi Glass Company Ltd. Verfahren und Vorrichtung zur Kathodenzerstäubung
JPH0853760A (ja) 1993-07-28 1996-02-27 Asahi Glass Co Ltd 酸化ケイ素膜の製造方法
DE69431573T2 (de) * 1993-07-28 2003-06-12 Asahi Glass Co., Ltd. Verfahren zur Herstellung von Schichten
JP3684593B2 (ja) * 1993-07-28 2005-08-17 旭硝子株式会社 スパッタリング方法およびその装置
DE19610012B4 (de) * 1996-03-14 2005-02-10 Unaxis Deutschland Holding Gmbh Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
SE9704607D0 (sv) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
JP2003022524A (ja) * 2001-07-06 2003-01-24 National Institute Of Advanced Industrial & Technology 磁気記録材料用基板の製造方法及び磁気記録材料
JP2003073814A (ja) * 2001-08-30 2003-03-12 Mitsubishi Heavy Ind Ltd 製膜装置
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
SE0402644D0 (sv) 2004-11-02 2004-11-02 Biocell Ab Method and apparatus for producing electric discharges
JP2007162100A (ja) * 2005-12-15 2007-06-28 Asahi Glass Co Ltd スパッタリング成膜方法
US8173278B2 (en) 2006-04-21 2012-05-08 Cemecon Ag Coated body
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
JP5383500B2 (ja) * 2006-12-12 2014-01-08 オーツェー・エリコン・バルザース・アーゲー 高出力インパルス・マグネトロン・スパッタリング（ｈｉｐｉｍｓ）を用いたｒｆ基板バイアス

Also Published As

Publication number Publication date
JP2015148015A (ja) 2015-08-20
EP2157205A1 (de) 2010-02-24
EP2157205B1 (de) 2011-11-30
US20100236919A1 (en) 2010-09-23
JP2010031359A (ja) 2010-02-12
PL2157205T3 (pl) 2012-04-30
US9551066B2 (en) 2017-01-24
JP6042048B2 (ja) 2016-12-14

Similar Documents

Publication Publication Date Title
ATE535629T1 (de) Gepulstes hochleistungs-magnetronsputterverfahren sowie hochleistungs-elektroenergiequelle
Sarakinos et al. High power pulsed magnetron sputtering: A review on scientific and engineering state of the art
US20060278521A1 (en) System and method for controlling ion density and energy using modulated power signals
US20060278524A1 (en) System and method for modulating power signals to control sputtering
TW200732488A (en) Sputtering method and sputtering system
WO2008071732A3 (en) Rf substrate bias with high power impulse magnetron sputtering (hipims)
US6522076B2 (en) Process and switching arrangement for pulsing energy introduction into magnetron discharges
TW200940735A (en) Reactive sputtering with HIPIMS
WO2008130507A3 (en) Plasma source with segmented magnetron cathode
WO2009065039A3 (en) Methods and apparatus for sputtering deposition using direct current
TW200409826A (en) High peak power plasma pulsed supply with arc handling
WO2008005756A3 (en) Apparatus for substrate processing and methods therefor
CA2916769C (en) Tib2 layers and manufacture thereof
HK1197087A1 (en) A high power pulsed magnetron sputtering method and a magnetron sputtering apparatus
CN105506549A (zh) 脉冲直流溅射制备五氧化二铌薄膜的方法
CN110050325B (zh) 溅射沉积源、具有该溅射沉积源的溅射沉积设备以及将层沉积于基板上的方法
PH12013502181A1 (en) High power impulse magnetron sputtering method providing enhanced ionization of the sputtered particles and apparatus for its implementation
EP2286643B1 (de) Vorrichtung und verfahren zum hochleistungs-puls-gasfluss-sputtern
TW200721265A (en) Silicon dot forming method and silicon dot forming apparatus
CN108173450A (zh) 一种集高压短脉冲预电离一体化高功率双极性脉冲形成电路
JP2007186726A5 (de)
CN103255464B (zh) 一种钢铁表面电化学氧化膜成膜液、使用方法及其形成的膜层
JP2007186724A5 (de)
Ehiasarian et al. Industrial size high power impulse magnetron sputtering
WO2009149888A8 (de) Verfahren zur herstellung einer transparenten und leitfähigen metalloxidschicht durch gepulstes, hochionisierendes magnetronsputtern