DE112012000833T8 - Aushärtbare Nanoprägezusammensetzung, mittels Nanoprägelithografie hergestelltes Formprodukt und Verfahren zur Ausbildung einer Strukturierung - Google Patents

Aushärtbare Nanoprägezusammensetzung, mittels Nanoprägelithografie hergestelltes Formprodukt und Verfahren zur Ausbildung einer Strukturierung Download PDF

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Publication number
DE112012000833T8
DE112012000833T8 DE112012000833.2T DE112012000833T DE112012000833T8 DE 112012000833 T8 DE112012000833 T8 DE 112012000833T8 DE 112012000833 T DE112012000833 T DE 112012000833T DE 112012000833 T8 DE112012000833 T8 DE 112012000833T8
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DE
Germany
Prior art keywords
nanoprecipitate
nanoprecipitated
curable
composition
patterning process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112012000833.2T
Other languages
English (en)
Other versions
DE112012000833T5 (de
Inventor
Hitoshi Sekine
Yasuhiro Takada
Hisashi Tanimoto
Naoto Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DIC Corp
Original Assignee
DIC Corp
Dainippon Ink and Chemicals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DIC Corp, Dainippon Ink and Chemicals Co Ltd filed Critical DIC Corp
Publication of DE112012000833T5 publication Critical patent/DE112012000833T5/de
Application granted granted Critical
Publication of DE112012000833T8 publication Critical patent/DE112012000833T8/de
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C08F290/068—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D151/00—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • C09D151/006—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers grafted on to block copolymers containing at least one sequence of polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Silicon Polymers (AREA)
DE112012000833.2T 2011-02-15 2012-02-14 Aushärtbare Nanoprägezusammensetzung, mittels Nanoprägelithografie hergestelltes Formprodukt und Verfahren zur Ausbildung einer Strukturierung Expired - Fee Related DE112012000833T8 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2011029654 2011-02-15
JP2011-029654 2011-02-15
JP2011-166787 2011-07-29
JP2011166787 2011-07-29
JP2011-169221 2011-08-02
JP2011169221 2011-08-02
PCT/JP2012/053373 WO2012111656A1 (ja) 2011-02-15 2012-02-14 ナノインプリント用硬化性組成物、ナノインプリント成形体及びパターン形成方法

Publications (2)

Publication Number Publication Date
DE112012000833T5 DE112012000833T5 (de) 2013-12-12
DE112012000833T8 true DE112012000833T8 (de) 2014-01-02

Family

ID=46672574

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012000833.2T Expired - Fee Related DE112012000833T8 (de) 2011-02-15 2012-02-14 Aushärtbare Nanoprägezusammensetzung, mittels Nanoprägelithografie hergestelltes Formprodukt und Verfahren zur Ausbildung einer Strukturierung

Country Status (6)

Country Link
US (1) US20140061970A1 (de)
KR (1) KR20130115358A (de)
CN (1) CN103392221B (de)
DE (1) DE112012000833T8 (de)
TW (1) TWI529487B (de)
WO (1) WO2012111656A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102004260B1 (ko) * 2012-03-29 2019-07-26 디아이씨 가부시끼가이샤 도전성 잉크 조성물, 도전성 패턴의 제조 방법 및 도전성 회로
JP5968041B2 (ja) * 2012-04-23 2016-08-10 株式会社トクヤマ 光硬化性ナノインプリント用組成物およびパターンの形成方法
TW201418333A (zh) * 2012-10-15 2014-05-16 Dainippon Ink & Chemicals 耐熱材料及耐熱構件
KR20160134667A (ko) * 2014-03-14 2016-11-23 디아이씨 가부시끼가이샤 산소 플라즈마 에칭용 레지스트 재료, 레지스트막 및 그것을 사용한 적층체
CN104257008A (zh) * 2014-10-21 2015-01-07 常熟市任阳工艺鞋厂 新型抗菌鞋垫
CN107075017B (zh) 2014-11-07 2019-11-05 Dic株式会社 固化性组合物、抗蚀材料及抗蚀膜
JP6285346B2 (ja) * 2014-12-08 2018-02-28 信越化学工業株式会社 透明樹脂組成物、該組成物からなる接着剤、該組成物からなるダイボンド材、該組成物を用いた導電接続方法、及び該方法によって得られた光半導体装置
JP6961495B2 (ja) 2016-01-25 2021-11-05 キヤノン株式会社 パターン形成方法、加工基板の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法、インプリントモールドの製造方法
KR102219155B1 (ko) 2016-03-24 2021-02-23 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 조성물, 감활성광선성 또는 감방사선성 조성물의 제조 방법, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
CN109195999B (zh) * 2016-05-11 2021-04-16 Dic株式会社 光压印用固化性组合物及使用其的图案形成方法
KR102712660B1 (ko) 2016-07-28 2024-10-04 삼성디스플레이 주식회사 패터닝된 경화물의 제조 방법 및 패터닝된 경화물
CN106739629B (zh) * 2016-11-09 2018-11-09 武汉华工图像技术开发有限公司 一种激光全息防伪膜
US20190146343A1 (en) 2017-11-10 2019-05-16 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
KR102610160B1 (ko) * 2018-05-14 2023-12-05 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
JP6983123B2 (ja) * 2018-07-24 2021-12-17 信越化学工業株式会社 粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法
CN112470254B (zh) * 2018-07-27 2024-06-04 学校法人东京理科大学 制造模制品的方法、压印-电子光刻的共同模制用抗蚀剂、制造复制模的方法、制造装置的方法和压印材料
JP7111274B2 (ja) * 2020-02-27 2022-08-02 Dic株式会社 層間絶縁膜製造用塗布組成物、層間絶縁膜、及び半導体素子、並びに層間絶縁膜の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11279408A (ja) * 1997-06-02 1999-10-12 Dainippon Ink & Chem Inc 水性樹脂の製造法、水性硬化性樹脂組成物および水性塗料
JP2001217380A (ja) * 2000-02-04 2001-08-10 Hitachi Ltd 半導体装置およびその製造方法
JP2002210745A (ja) * 2001-01-22 2002-07-30 Canon Inc 金型製造方法およびレプリカマスターならびに金型
JP5000112B2 (ja) * 2005-09-09 2012-08-15 東京応化工業株式会社 ナノインプリントリソグラフィによるパターン形成方法
JP5062521B2 (ja) * 2007-02-27 2012-10-31 独立行政法人理化学研究所 レプリカモールドの製造方法およびレプリカモールド
EP2256788A4 (de) * 2008-03-07 2011-03-30 Showa Denko Kk Uv-nanoimprintverfahren, harzabdruckform und herstellungsverfahren dafür, magnetisches aufzeichnungsmedium und verfahren zu seiner herstellung sowie magnetisches aufzeichnungs-/wiedergabegerät
KR101217749B1 (ko) * 2008-12-11 2013-01-02 디아이씨 가부시끼가이샤 경화성 수지 조성물 및 도료, 그것을 적층하여 이루어지는 플라스틱 성형체
JP5393282B2 (ja) 2009-06-17 2014-01-22 東京応化工業株式会社 ナノインプリント用組成物およびパターン形成方法
JP5403371B2 (ja) * 2009-06-22 2014-01-29 綜研化学株式会社 金属製モールドの製造方法ならびに該金属製モールドを製造するための樹脂モールドおよび樹脂
JP5566639B2 (ja) * 2009-07-16 2014-08-06 富士フイルム株式会社 インプリント用硬化性組成物、硬化物およびパターン形成方法

Also Published As

Publication number Publication date
KR20130115358A (ko) 2013-10-21
TWI529487B (zh) 2016-04-11
US20140061970A1 (en) 2014-03-06
TW201239528A (en) 2012-10-01
WO2012111656A1 (ja) 2012-08-23
CN103392221B (zh) 2016-08-10
DE112012000833T5 (de) 2013-12-12
CN103392221A (zh) 2013-11-13

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee