DE2145452A1 - - Google Patents
Info
- Publication number
- DE2145452A1 DE2145452A1 DE19712145452 DE2145452A DE2145452A1 DE 2145452 A1 DE2145452 A1 DE 2145452A1 DE 19712145452 DE19712145452 DE 19712145452 DE 2145452 A DE2145452 A DE 2145452A DE 2145452 A1 DE2145452 A1 DE 2145452A1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8076370 | 1970-09-14 | ||
| JP8076370 | 1970-09-14 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2145452A1 true DE2145452A1 (2) | 1973-01-18 |
| DE2145452B1 DE2145452B1 (de) | 1973-01-18 |
| DE2145452C DE2145452C (de) | 1973-08-09 |
Family
ID=
Also Published As
| Publication number | Publication date |
|---|---|
| FR2107594A5 (2) | 1972-05-05 |
| GB1325108A (en) | 1973-08-01 |
| AU448164B2 (en) | 1974-05-09 |
| NL7112583A (2) | 1972-03-16 |
| DE2145452B1 (de) | 1973-01-18 |
| AU3341571A (en) | 1973-03-22 |
| CA931235A (en) | 1973-07-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EF | Willingness to grant licences | ||
| 8339 | Ceased/non-payment of the annual fee |