DE3268109D1 - Dense dynamic memory cell structure and manufacturing process - Google Patents

Dense dynamic memory cell structure and manufacturing process

Info

Publication number
DE3268109D1
DE3268109D1 DE8282105762T DE3268109T DE3268109D1 DE 3268109 D1 DE3268109 D1 DE 3268109D1 DE 8282105762 T DE8282105762 T DE 8282105762T DE 3268109 T DE3268109 T DE 3268109T DE 3268109 D1 DE3268109 D1 DE 3268109D1
Authority
DE
Germany
Prior art keywords
memory cell
manufacturing process
cell structure
dynamic memory
dense dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282105762T
Other languages
German (de)
English (en)
Inventor
Donald Mcalpine Kenney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3268109D1 publication Critical patent/DE3268109D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
DE8282105762T 1981-07-22 1982-06-29 Dense dynamic memory cell structure and manufacturing process Expired DE3268109D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/286,110 US4511911A (en) 1981-07-22 1981-07-22 Dense dynamic memory cell structure and process

Publications (1)

Publication Number Publication Date
DE3268109D1 true DE3268109D1 (en) 1986-02-06

Family

ID=23097120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282105762T Expired DE3268109D1 (en) 1981-07-22 1982-06-29 Dense dynamic memory cell structure and manufacturing process

Country Status (5)

Country Link
US (1) US4511911A (2)
EP (1) EP0070426B1 (2)
JP (1) JPS5818960A (2)
CA (1) CA1183954A (2)
DE (1) DE3268109D1 (2)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS6181669A (ja) * 1984-06-25 1986-04-25 テキサス　インスツルメンツ　インコ−ポレイテツド 電界効果トランジスタを作る方法
JPS6182464A (ja) * 1984-07-02 1986-04-26 テキサス　インスツルメンツ　インコ−ポレイテツド メモリ・セルとその製法
US4571816A (en) * 1984-12-11 1986-02-25 Rca Corporation Method of making a capacitor with standard self-aligned gate process
KR930010088B1 (ko) * 1985-04-24 1993-10-14 가부시기가이샤 히다찌세이꾸쇼 반도체 기억장치와 그 제조방법
JPS62198153A (ja) * 1986-02-26 1987-09-01 Nec Corp 半導体装置
JPH0789569B2 (ja) * 1986-03-26 1995-09-27 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPS63183904A (ja) * 1987-01-27 1988-07-29 Kanebo Ltd 可視光重合硬化性組成物
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4970689A (en) * 1988-03-07 1990-11-13 International Business Machines Corporation Charge amplifying trench memory cell
TW483089B (en) * 2001-02-07 2002-04-11 Macronix Int Co Ltd Method for reducing wire capacitance and its semiconductor structure
JP4816800B2 (ja) 2010-03-10 2011-11-16 オムロン株式会社 電子部品、電子部品の製造方法および電子体温計

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301884A (2) * 1962-12-17
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US4017883A (en) * 1971-07-06 1977-04-12 Ibm Corporation Single-electrode charge-coupled random access memory cell with impurity implanted gate region
US4014036A (en) * 1971-07-06 1977-03-22 Ibm Corporation Single-electrode charge-coupled random access memory cell
US3767983A (en) * 1972-08-23 1973-10-23 Bell Telephone Labor Inc Charge transfer device with improved transfer efficiency
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
NL185376C (nl) * 1976-10-25 1990-03-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4164751A (en) * 1976-11-10 1979-08-14 Texas Instruments Incorporated High capacity dynamic ram cell
US4135289A (en) * 1977-08-23 1979-01-23 Bell Telephone Laboratories, Incorporated Method for producing a buried junction memory device
US4326331A (en) * 1979-09-17 1982-04-27 Texas Instruments Incorporated High coupling ratio electrically programmable ROM
NL186886C (nl) * 1980-11-28 1992-03-16 Philips Nv Halfgeleiderinrichting.
US4373965A (en) * 1980-12-22 1983-02-15 Ncr Corporation Suppression of parasitic sidewall transistors in locos structures

Also Published As

Publication number Publication date
EP0070426A3 (en) 1983-09-14
US4511911A (en) 1985-04-16
CA1183954A (en) 1985-03-12
JPH03789B2 (2) 1991-01-08
EP0070426B1 (en) 1985-12-27
JPS5818960A (ja) 1983-02-03
EP0070426A2 (en) 1983-01-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee