DE3676501D1 - Sputterverfahren zur verminderung der huegelbildung bei auf substrate aufgebrachten aluminiumschichten. - Google Patents

Sputterverfahren zur verminderung der huegelbildung bei auf substrate aufgebrachten aluminiumschichten.

Info

Publication number
DE3676501D1
DE3676501D1 DE8686907056T DE3676501T DE3676501D1 DE 3676501 D1 DE3676501 D1 DE 3676501D1 DE 8686907056 T DE8686907056 T DE 8686907056T DE 3676501 T DE3676501 T DE 3676501T DE 3676501 D1 DE3676501 D1 DE 3676501D1
Authority
DE
Germany
Prior art keywords
substrates
sputtering method
layers applied
aluminum layers
hollow formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686907056T
Other languages
English (en)
Inventor
Y Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE3676501D1 publication Critical patent/DE3676501D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE8686907056T 1985-11-12 1986-10-29 Sputterverfahren zur verminderung der huegelbildung bei auf substrate aufgebrachten aluminiumschichten. Expired - Fee Related DE3676501D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/797,095 US4891112A (en) 1985-11-12 1985-11-12 Sputtering method for reducing hillocking in aluminum layers formed on substrates
PCT/US1986/002276 WO1987003013A1 (en) 1985-11-12 1986-10-29 Sputtering method for reducing hillocking in aluminum layers formed on substrates

Publications (1)

Publication Number Publication Date
DE3676501D1 true DE3676501D1 (de) 1991-02-07

Family

ID=25169890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686907056T Expired - Fee Related DE3676501D1 (de) 1985-11-12 1986-10-29 Sputterverfahren zur verminderung der huegelbildung bei auf substrate aufgebrachten aluminiumschichten.

Country Status (5)

Country Link
US (1) US4891112A (de)
EP (1) EP0247140B1 (de)
JP (1) JPS63501432A (de)
DE (1) DE3676501D1 (de)
WO (1) WO1987003013A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4721689A (en) * 1986-08-28 1988-01-26 International Business Machines Corporation Method for simultaneously forming an interconnection level and via studs
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
EP0491503A3 (de) * 1990-12-19 1992-07-22 AT&T Corp. Verfahren zur Ablagerung von Metall
TW239900B (de) * 1993-06-17 1995-02-01 Materials Research Corp
US5599737A (en) * 1994-12-30 1997-02-04 Lucent Technologies Inc. Conductive runner fabrication
TW460599B (en) * 1998-01-14 2001-10-21 Toshiba Corp Method for forming fine wiring pattern
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6420263B1 (en) 2000-02-28 2002-07-16 International Business Machines Corporation Method for controlling extrusions in aluminum metal lines and the device formed therefrom
US20130071618A1 (en) * 2011-09-20 2013-03-21 Shenzhen China Star Optoelectronics Technology Co. Ltd. Thin Film, Pattern Layer, And Manufacturing Method Thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451912A (en) * 1966-07-15 1969-06-24 Ibm Schottky-barrier diode formed by sputter-deposition processes
US4012756A (en) * 1969-12-30 1977-03-15 International Business Machines Corporation Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith
US3761372A (en) * 1971-07-09 1973-09-25 Gillette Co Method for producing an improved cutting tool
US4007103A (en) * 1975-10-14 1977-02-08 Ibm Corporation Planarizing insulative layers by resputtering
US4124472A (en) * 1977-02-28 1978-11-07 Riegert Richard P Process for the protection of wear surfaces
US4111775A (en) * 1977-07-08 1978-09-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multilevel metallization method for fabricating a metal oxide semiconductor device
ATE2443T1 (de) * 1978-10-09 1983-03-15 Asu Composants S.A. Verfahren zum absetzen einer selbstschmierenden, aus metallischen chalkogeniden bestehenden schicht auf unterlagen durch kathodenzerstaeubung.
US4184933A (en) * 1978-11-29 1980-01-22 Harris Corporation Method of fabricating two level interconnects and fuse on an IC
US4336118A (en) * 1980-03-21 1982-06-22 Battelle Memorial Institute Methods for making deposited films with improved microstructures
US4468438A (en) * 1981-12-07 1984-08-28 At&T Bell Laboratories Garnet epitaxial films with high Curie temperatures
US4525733A (en) * 1982-03-03 1985-06-25 Eastman Kodak Company Patterning method for reducing hillock density in thin metal films and a structure produced thereby

Also Published As

Publication number Publication date
JPS63501432A (ja) 1988-06-02
EP0247140A1 (de) 1987-12-02
WO1987003013A1 (en) 1987-05-21
EP0247140B1 (de) 1991-01-02
US4891112A (en) 1990-01-02

Similar Documents

Publication Publication Date Title
DE3688758D1 (de) Duennfilmtransistor auf isolierendem substrat.
DE3688385D1 (de) System und verfahren zum absetzen mehrerer duenner filmschichten auf ein substrat.
DE3583422D1 (de) Mehrschichtleitersubstrat.
DE3862326D1 (de) Duennschicht-einkristall-diamantsubstrat.
FI875153A7 (fi) Menetelmä kerrosten, kuten alustoilla olevien pintakerrosten paksuuden säätämiseksi ja/tai mittaamiseksi.
DE3784926D1 (de) Beschichtungsverfahren fuer leitungen.
FR2746791B1 (fr) Substrat revetu destine a un vitrage transparent a haute selectivite
DE3778261D1 (de) Substrat mit mehrschichtiger verdrahtung.
ES547591A0 (es) Un metodo de revestir un substrato con capas multiples de polimero.
DE3681808D1 (de) Herstellungsverfahren von traegern fuer gedruckte schaltungen.
DE3686092D1 (de) Verfahren zur in-situ-herstellung einer schutzschicht auf photolack fuer plasmaaetzen.
DE3586099D1 (de) Abscheiden eines ueberzugs auf einem poroesen substrat.
DE3485129D1 (de) Verfahren zur bildung eines musters von elektrisch leitenden linien auf der oberseite eines keramischen substrates.
DE3650612D1 (de) Verfahren zur Planarisierung einer dünnen Al-Schicht
DE3774052D1 (de) Verfahren zur bildung von siliziumoxynitridschichten auf siliziumsubstraten.
DE68917477D1 (de) Verfahren zur schaffung einer grenzschicht zwischen substrat und atmosphäre.
FI885141A7 (fi) Menetelmä substraattien päällystämiseksi
DE3873938D1 (de) Laminiertes substrat fuer integrierte schaltungen.
DE68906907D1 (de) Glaskeramik zur beschichtung von metallischen substraten.
AU3114284A (en) Flexible substrate with glass layers
NO172808C (no) Anvendelse av polysiloksanmasser til forebyggelse av isdannelse paa substrater
DE3771040D1 (de) Metallischer ueberzug auf einem mineralischen substrat.
DE69403748D1 (de) Verfahren zum Verbinden einer Tintenaufnahmeschicht auf einem vorgegebenen Substrat
DE3764554D1 (de) Verfahren zum niederschlagen von phosphorsilikatglasschichten.
IT8521347A0 (it) Metodo e apparecchiatura per il rivestimento di crogiuoli di quarzo con strati protettivi.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee