DE3677588D1 - Maskierungsverfahren und verwendete maske. - Google Patents

Maskierungsverfahren und verwendete maske.

Info

Publication number
DE3677588D1
DE3677588D1 DE8686420280T DE3677588T DE3677588D1 DE 3677588 D1 DE3677588 D1 DE 3677588D1 DE 8686420280 T DE8686420280 T DE 8686420280T DE 3677588 T DE3677588 T DE 3677588T DE 3677588 D1 DE3677588 D1 DE 3677588D1
Authority
DE
Germany
Prior art keywords
mask used
masking method
masking
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686420280T
Other languages
English (en)
Inventor
Jean-Marc Dumant
Bruno Latombe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3677588D1 publication Critical patent/DE3677588D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8686420280T 1985-11-21 1986-11-19 Maskierungsverfahren und verwendete maske. Expired - Lifetime DE3677588D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8517487A FR2590376A1 (fr) 1985-11-21 1985-11-21 Procede de masquage et masque utilise

Publications (1)

Publication Number Publication Date
DE3677588D1 true DE3677588D1 (de) 1991-03-28

Family

ID=9325177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686420280T Expired - Lifetime DE3677588D1 (de) 1985-11-21 1986-11-19 Maskierungsverfahren und verwendete maske.

Country Status (4)

Country Link
US (1) US4762396A (de)
EP (1) EP0234166B1 (de)
DE (1) DE3677588D1 (de)
FR (1) FR2590376A1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3879471T2 (de) * 1988-04-21 1993-09-16 Ibm Verfahren zur herstellung eines photoresistmusters und apparat dafuer.
US4912022A (en) * 1988-12-27 1990-03-27 Motorola, Inc. Method for sloping the profile of an opening in resist
JP2754785B2 (ja) * 1989-09-20 1998-05-20 ソニー株式会社 高密度光ディスクの製造方法
JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
DE69131497T2 (de) * 1990-06-21 2000-03-30 Matsushita Electronics Corp., Kadoma Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben
US5578402A (en) * 1990-06-21 1996-11-26 Matsushita Electronics Corporation Photomask used by photolithography and a process of producing same
JPH0566552A (ja) * 1990-12-28 1993-03-19 Nippon Steel Corp レチクル
US5252434A (en) * 1992-02-20 1993-10-12 At&T Bell Laboratories Method for forming a sloped surface having a predetermined slope
US5320864A (en) * 1992-06-29 1994-06-14 Lsi Logic Corporation Sedimentary deposition of photoresist on semiconductor wafers
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features
KR950008384B1 (ko) * 1992-12-10 1995-07-28 삼성전자주식회사 패턴의 형성방법
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
US5866913A (en) * 1995-12-19 1999-02-02 International Business Machines Corporation Proximity correction dose modulation for E-beam projection lithography
KR100209752B1 (ko) * 1996-05-16 1999-07-15 구본준 마이크로 렌즈 패턴용 마스크
US5840447A (en) * 1997-08-29 1998-11-24 International Business Machines Corporation Multi-phase photo mask using sub-wavelength structures
KR100288150B1 (ko) * 1997-11-27 2001-05-02 구본준 액정표시장치의 제조방법
US7083900B2 (en) * 1997-11-27 2006-08-01 Lg Electronics Inc. Method for manufacturing a liquid crystal display device
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6301697B1 (en) * 1999-04-30 2001-10-09 Nicolas B. Cobb Streamlined IC mask layout optical and process correction through correction reuse
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US7412676B2 (en) * 2000-06-13 2008-08-12 Nicolas B Cobb Integrated OPC verification tool
US6425113B1 (en) * 2000-06-13 2002-07-23 Leigh C. Anderson Integrated verification and manufacturability tool
US6430737B1 (en) * 2000-07-10 2002-08-06 Mentor Graphics Corp. Convergence technique for model-based optical and process correction
US6574784B1 (en) * 2001-06-14 2003-06-03 George P. Lippincott Short edge management in rule based OPC
US7013439B2 (en) * 2002-01-31 2006-03-14 Juan Andres Torres Robles Contrast based resolution enhancing technology
US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
US6973633B2 (en) * 2002-07-24 2005-12-06 George Lippincott Caching of lithography and etch simulation results
US6928634B2 (en) * 2003-01-02 2005-08-09 Yuri Granik Matrix optical process correction
US7073162B2 (en) * 2003-10-31 2006-07-04 Mentor Graphics Corporation Site control for OPC
US7536660B2 (en) * 2004-02-24 2009-05-19 Konstantinos Adam OPC simulation model using SOCS decomposition of edge fragments
US7539954B2 (en) * 2004-02-24 2009-05-26 Konstantinos Adam OPC simulation model using SOCS decomposition of edge fragments
US7861207B2 (en) 2004-02-25 2010-12-28 Mentor Graphics Corporation Fragmentation point and simulation site adjustment for resolution enhancement techniques
US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
US7282306B2 (en) * 2004-03-26 2007-10-16 Intel Corporation Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret
US8799830B2 (en) * 2004-05-07 2014-08-05 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
US7240305B2 (en) * 2004-06-02 2007-07-03 Lippincott George P OPC conflict identification and edge priority system
US7459248B2 (en) * 2005-02-24 2008-12-02 James Word Performing OPC on structures with virtual edges
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US7434199B2 (en) * 2005-09-27 2008-10-07 Nicolas Bailey Cobb Dense OPC
US7712068B2 (en) * 2006-02-17 2010-05-04 Zhuoxiang Ren Computation of electrical properties of an IC layout
US7506285B2 (en) 2006-02-17 2009-03-17 Mohamed Al-Imam Multi-dimensional analysis for predicting RET model accuracy
US8056022B2 (en) 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
US7966585B2 (en) 2006-12-13 2011-06-21 Mentor Graphics Corporation Selective shielding for multiple exposure masks
US7802226B2 (en) * 2007-01-08 2010-09-21 Mentor Graphics Corporation Data preparation for multiple mask printing
US7739650B2 (en) * 2007-02-09 2010-06-15 Juan Andres Torres Robles Pre-bias optical proximity correction
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
US8713483B2 (en) 2007-06-05 2014-04-29 Mentor Graphics Corporation IC layout parsing for multiple masks
US7805699B2 (en) * 2007-10-11 2010-09-28 Mentor Graphics Corporation Shape-based photolithographic model calibration

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3232498A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
US4514489A (en) * 1983-09-01 1985-04-30 Motorola, Inc. Photolithography process
JPS60135949A (ja) * 1983-12-23 1985-07-19 Matsushita Electric Works Ltd 光成形体の製造方法

Also Published As

Publication number Publication date
EP0234166A1 (de) 1987-09-02
FR2590376A1 (fr) 1987-05-22
EP0234166B1 (de) 1991-02-20
US4762396A (en) 1988-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee