DE3772425D1 - Integrierter widerstand auf einem halbleitersubstrat. - Google Patents

Integrierter widerstand auf einem halbleitersubstrat.

Info

Publication number: DE3772425D1
Authority: DE; Germany
Prior art keywords: semiconductor substrate; integrated resistance; integrated; resistance; semiconductor
Prior art date: 1986-04-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8787400742T

Other languages

English (en)

Inventor

Bruno Nadd

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Thales SA

Original Assignee

Thomson CSF SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-04-04

Filing date

1987-04-03

Publication date

1991-10-02

1987-04-03 Application filed by Thomson CSF SA filed Critical Thomson CSF SA

1991-10-02 Application granted granted Critical

1991-10-02 Publication of DE3772425D1 publication Critical patent/DE3772425D1/de

2007-04-04 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
239000000758 substrate Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

DE8787400742T 1986-04-04 1987-04-03 Integrierter widerstand auf einem halbleitersubstrat. Expired - Fee Related DE3772425D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR8604858A FR2596922B1 (fr)	1986-04-04	1986-04-04	Resistance integree sur un substrat semi-conducteur

Publications (1)

Publication Number	Publication Date
DE3772425D1 true DE3772425D1 (de)	1991-10-02

Family

ID=9333914

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787400742T Expired - Fee Related DE3772425D1 (de)	1986-04-04	1987-04-03	Integrierter widerstand auf einem halbleitersubstrat.

Country Status (6)

Country	Link
US (1)	US4792840A (de)
EP (1)	EP0240435B1 (de)
JP (1)	JP2619343B2 (de)
CA (1)	CA1284691C (de)
DE (1)	DE3772425D1 (de)
FR (1)	FR2596922B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5128514A (en) *	1987-07-31	1992-07-07	Siemens Aktiengesellschaft	Black radiator for use as an emitter in calibratable gas sensors
JPS6481835A (en) *	1987-09-24	1989-03-28	Yamaguchi Unmo Kogyosho Kk	Mica powder filler and granulation thereof
FR2646019B1 (fr) *	1989-04-14	1991-07-19	Sgs Thomson Microelectronics	Resistance spirale haute tension
FR2649828B1 (fr) *	1989-07-17	1991-10-31	Sgs Thomson Microelectronics	Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
EP0574643B1 (de) *	1992-05-28	1998-03-18	Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe	Auf einem Halbleitersubstrat integrierter Spiralwiderstand
EP0571695A1 (de) *	1992-05-28	1993-12-01	Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe	Auf einem Halbleitersubstrat integrierter Hochsspannungswiderstand
FR2693035B1 (fr) *	1992-06-30	1994-09-30	Sgs Thomson Microelectronics	Diode de protection pour composant semiconducteur vertical.
US6222247B1 (en) *	1999-12-02	2001-04-24	United Microelectronics Corp.	Semiconductor resistor that can be withstand high voltages
JP4469584B2 (ja) *	2003-09-12	2010-05-26	株式会社東芝	半導体装置
US7306999B2 (en) *	2005-01-25	2007-12-11	Semiconductor Components Industries, L.L.C.	High voltage sensor device and method therefor
US7955943B2 (en) *	2005-01-25	2011-06-07	Semiconductor Components Industries, Llc	High voltage sensor device and method therefor
US7956418B2 (en) *	2007-05-29	2011-06-07	Mediatek Inc.	ESD protection devices
CN114267717B (zh) *	2021-11-19	2024-03-01	深圳深爱半导体股份有限公司	半导体器件及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB945747A (de) *	1959-02-06		Texas Instruments Inc
FR1539871A (fr) *	1967-08-07	1968-09-20	Lip Sa	élément plan pour la constitution de selfs ou de résistances par empilement d'éléments de ce type
US3629667A (en) *	1969-03-14	1971-12-21	Ibm	Semiconductor resistor with uniforms current distribution at its contact surface
US4157563A (en) *	1971-07-02	1979-06-05	U.S. Philips Corporation	Semiconductor device
US4009483A (en) *	1974-04-04	1977-02-22	Motorola, Inc.	Implementation of surface sensitive semiconductor devices
US4139833A (en) *	1976-11-22	1979-02-13	Gould Inc.	Resistance temperature sensor
JPS5833708B2 (ja) *	1977-01-31	1983-07-21	株式会社東芝	集積回路装置
IT1115654B (it) *	1977-05-04	1986-02-03	Ates Componenti Elettron	Partitore di tensione diffuso per circuito integrato monolitico
GB2011178B (en) *	1977-12-15	1982-03-17	Philips Electronic Associated	Fieldeffect devices
JPS5811750B2 (ja) *	1979-06-04	1983-03-04	株式会社日立製作所	高耐圧抵抗素子
JPS57160159A (en) *	1981-03-28	1982-10-02	Toshiba Corp	High breakdown voltage planar type semiconductor device
JPS5976466A (ja) *	1982-10-25	1984-05-01	Mitsubishi Electric Corp	プレ−ナ形半導体装置

1986
- 1986-04-04 FR FR8604858A patent/FR2596922B1/fr not_active Expired
1987
- 1987-04-01 US US07/032,561 patent/US4792840A/en not_active Expired - Lifetime
- 1987-04-03 CA CA000533755A patent/CA1284691C/fr not_active Expired - Lifetime
- 1987-04-03 EP EP87400742A patent/EP0240435B1/de not_active Expired - Lifetime
- 1987-04-03 DE DE8787400742T patent/DE3772425D1/de not_active Expired - Fee Related
- 1987-04-03 JP JP62082798A patent/JP2619343B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
CA1284691C (fr)	1991-06-04
JP2619343B2 (ja)	1997-06-11
EP0240435B1 (de)	1991-08-28
EP0240435A1 (de)	1987-10-07
FR2596922B1 (fr)	1988-05-20
US4792840A (en)	1988-12-20
FR2596922A1 (fr)	1987-10-09
JPS62239561A (ja)	1987-10-20

Legal Events

Date	Code	Title	Description
1992-09-24	8364	No opposition during term of opposition
2004-02-12	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3581535D1 (de)	1991-02-28	Integrierter zusammenbau auf einer halbleiterscheibe.
DE3688088D1 (de)	1993-04-29	Integrierte halbleiterschaltung.
DE3177218D1 (de)	1990-11-08	Integrierte schaltungsanordnung auf halbleiterscheibenskala.
DE3677543D1 (de)	1991-03-28	Ein supergitter enthaltende halbleitervorrichtung.
DE3685071D1 (de)	1992-06-04	Integrierte halbleiterschaltung.
NO891590D0 (no)	1989-04-18	Roerkoplingsanordning.
DE68921088D1 (de)	1995-03-23	Integrierte Halbleiterschaltung.
DE3786070D1 (de)	1993-07-08	Umhuellte halbleiteranordnung.
DE3680774D1 (de)	1991-09-12	Integriertes halbleiterbauelement.
DE3782775D1 (de)	1993-01-07	Integrierte halbleiterschaltung.
DE3685759D1 (de)	1992-07-30	Integrierte halbleiterschaltung.
DE69010034D1 (de)	1994-07-28	Halbleiteranordnung mit einer Schutzschaltung.
DE3772425D1 (de)	1991-10-02	Integrierter widerstand auf einem halbleitersubstrat.
DE3684364D1 (de)	1992-04-23	Integrierte halbleiterschaltung.
DE3677165D1 (de)	1991-02-28	Integrierte halbleiterschaltungsanordnung.
DE3686753D1 (de)	1992-10-22	Lichtemittierendes halbleiterelement.
NL193883B (nl)	2000-09-01	Geïntegreerde halfgeleiderinrichting.
DE3581333D1 (de)	1991-02-21	Lichtemittierende halbleitervorrichtung.
DE3681193D1 (de)	1991-10-10	Auf einem verbundhalbleitersubstrat gebildete logische integrierte schaltungsvorrichtung.
DE3883504D1 (de)	1993-09-30	Integrierte Halbleiterschaltung mit einer Gleichstromprüfungsfunktion.
DE3784247D1 (de)	1993-03-25	Halbleiter-zusammenbau.
DE3685983D1 (de)	1992-08-20	Integrierte halbleiteranordnung.
DE3750124D1 (de)	1994-07-28	Zweirichtungs-Halbleitergerät mit nur einem einzigen Einrichtungsgerät.
DE3581159D1 (de)	1991-02-07	Halbleiteranordnung mit integrierter schaltung.
FI873996L (fi)	1988-03-17	Foerbaettrad metod foer framstaellning av sammansatta keramiska strukturer genom anvaendning av metallskrot.