DE3855871D1 - Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen - Google Patents

Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen

Info

Publication number
DE3855871D1
DE3855871D1 DE3855871T DE3855871T DE3855871D1 DE 3855871 D1 DE3855871 D1 DE 3855871D1 DE 3855871 T DE3855871 T DE 3855871T DE 3855871 T DE3855871 T DE 3855871T DE 3855871 D1 DE3855871 D1 DE 3855871D1
Authority
DE
Germany
Prior art keywords
carrying
heat treatment
semiconductor wafers
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855871T
Other languages
English (en)
Other versions
DE3855871T2 (de
Inventor
Shigeki Hirasawa
Takuji Torii
Tomoji Watanabe
Toshihiro Komatsu
Kazuo Honma
Akihiko Sakai
Tetsuya Takagaki
Toshiyuki Uchino
Hiroto Nagatomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62226389A external-priority patent/JPH0744159B2/ja
Priority claimed from JP63188477A external-priority patent/JPH0239525A/ja
Priority claimed from JP63221859A external-priority patent/JPH088220B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3855871D1 publication Critical patent/DE3855871D1/de
Application granted granted Critical
Publication of DE3855871T2 publication Critical patent/DE3855871T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/13—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y10S414/138—Wafers positioned vertically within cassette
DE3855871T 1987-09-11 1988-09-09 Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen Expired - Fee Related DE3855871T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62226389A JPH0744159B2 (ja) 1987-09-11 1987-09-11 半導体ウエハの熱処理装置および熱処理方法
JP63188477A JPH0239525A (ja) 1988-07-29 1988-07-29 半導体熱処理装置
JP63221859A JPH088220B2 (ja) 1988-09-05 1988-09-05 半導体ウェハの熱処理装置、及び熱処理方法

Publications (2)

Publication Number Publication Date
DE3855871D1 true DE3855871D1 (de) 1997-05-22
DE3855871T2 DE3855871T2 (de) 1997-10-16

Family

ID=27326044

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855871T Expired - Fee Related DE3855871T2 (de) 1987-09-11 1988-09-09 Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen

Country Status (3)

Country Link
US (1) US5001327A (de)
EP (1) EP0306967B1 (de)
DE (1) DE3855871T2 (de)

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CN114466728B (zh) 2019-07-26 2025-05-27 朗姆研究公司 用于自动化晶片搬运机械手教导与健康检查的整合适应性定位系统及例程
JP7754586B2 (ja) * 2021-06-08 2025-10-15 東京エレクトロン株式会社 温度補正情報算出装置、半導体製造装置、プログラム、温度補正情報算出方法
CN118658802B (zh) * 2024-08-19 2024-10-29 青岛天仁微纳科技有限责任公司 一种高可控性纳米压印晶圆热处理监测方法

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Also Published As

Publication number Publication date
EP0306967B1 (de) 1997-04-16
EP0306967A2 (de) 1989-03-15
EP0306967A3 (de) 1990-08-22
DE3855871T2 (de) 1997-10-16
US5001327A (en) 1991-03-19

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