DE60000115D1 - Halbleiterlaser und zugehöriges Herstellungsverfahren - Google Patents

Halbleiterlaser und zugehöriges Herstellungsverfahren

Info

Publication number
DE60000115D1
DE60000115D1 DE60000115T DE60000115T DE60000115D1 DE 60000115 D1 DE60000115 D1 DE 60000115D1 DE 60000115 T DE60000115 T DE 60000115T DE 60000115 T DE60000115 T DE 60000115T DE 60000115 D1 DE60000115 D1 DE 60000115D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
associated manufacturing
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60000115T
Other languages
English (en)
Other versions
DE60000115T2 (de
Inventor
Yoshinori Kumura
Hiroyuki Ota
Mitsuru Nishitsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Publication of DE60000115D1 publication Critical patent/DE60000115D1/de
Application granted granted Critical
Publication of DE60000115T2 publication Critical patent/DE60000115T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60000115T 1999-02-01 2000-01-31 Halbleiterlaser und zugehöriges Herstellungsverfahren Expired - Lifetime DE60000115T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02380599A JP3690570B2 (ja) 1999-02-01 1999-02-01 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE60000115D1 true DE60000115D1 (de) 2002-05-16
DE60000115T2 DE60000115T2 (de) 2002-08-22

Family

ID=12120553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60000115T Expired - Lifetime DE60000115T2 (de) 1999-02-01 2000-01-31 Halbleiterlaser und zugehöriges Herstellungsverfahren

Country Status (4)

Country Link
US (1) US20030021316A1 (de)
EP (1) EP1026799B1 (de)
JP (1) JP3690570B2 (de)
DE (1) DE60000115T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030235225A1 (en) * 2002-06-22 2003-12-25 Rick Glew Guided self-aligned laser structure with integral current blocking layer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060973B2 (ja) * 1996-12-24 2000-07-10 日本電気株式会社 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ
JPH1117277A (ja) * 1997-06-20 1999-01-22 Sharp Corp 窒化物系半導体レーザ装置およびその製造方法

Also Published As

Publication number Publication date
JP2000223783A (ja) 2000-08-11
US20030021316A1 (en) 2003-01-30
JP3690570B2 (ja) 2005-08-31
EP1026799A2 (de) 2000-08-09
DE60000115T2 (de) 2002-08-22
EP1026799B1 (de) 2002-04-10
EP1026799A3 (de) 2000-08-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)