DE602004018559D1 - Lichtempfindliche Vorrichtung, deren Herstellungsverfahren und integrierte optoelektronische Schaltung mit dieser Vorrichtung - Google Patents

Lichtempfindliche Vorrichtung, deren Herstellungsverfahren und integrierte optoelektronische Schaltung mit dieser Vorrichtung

Info

Publication number
DE602004018559D1
DE602004018559D1 DE602004018559T DE602004018559T DE602004018559D1 DE 602004018559 D1 DE602004018559 D1 DE 602004018559D1 DE 602004018559 T DE602004018559 T DE 602004018559T DE 602004018559 T DE602004018559 T DE 602004018559T DE 602004018559 D1 DE602004018559 D1 DE 602004018559D1
Authority
DE
Germany
Prior art keywords
production method
optoelectronic circuit
integrated optoelectronic
photosensitive
photosensitive device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004018559T
Other languages
English (en)
Inventor
Jun-Young Kim
Byoung-Iyong Choi
Eun-Kyung Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004018559D1 publication Critical patent/DE602004018559D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
DE602004018559T 2003-02-25 2004-02-24 Lichtempfindliche Vorrichtung, deren Herstellungsverfahren und integrierte optoelektronische Schaltung mit dieser Vorrichtung Expired - Lifetime DE602004018559D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0011639A KR100528331B1 (ko) 2003-02-25 2003-02-25 수광소자 및 그 제조방법 및 이를 적용한 광전자 집적 회로

Publications (1)

Publication Number Publication Date
DE602004018559D1 true DE602004018559D1 (de) 2009-02-05

Family

ID=32768603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018559T Expired - Lifetime DE602004018559D1 (de) 2003-02-25 2004-02-24 Lichtempfindliche Vorrichtung, deren Herstellungsverfahren und integrierte optoelektronische Schaltung mit dieser Vorrichtung

Country Status (6)

Country Link
US (1) US7015560B2 (de)
EP (1) EP1453106B1 (de)
JP (1) JP2004260181A (de)
KR (1) KR100528331B1 (de)
CN (1) CN100442526C (de)
DE (1) DE602004018559D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2392782B (en) * 2002-09-04 2005-07-13 Teraview Ltd An Antenna
US7880255B2 (en) * 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
JP4618064B2 (ja) * 2005-09-12 2011-01-26 ソニー株式会社 半導体装置およびその製造方法
JP5003013B2 (ja) * 2006-04-25 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
KR101330270B1 (ko) * 2010-01-29 2013-11-15 이화여자대학교 산학협력단 소비전력 및 암전류가 감소된 실리콘 광전자 증배관
JP2012059881A (ja) * 2010-09-08 2012-03-22 Toshiba Corp 撮像素子、撮像モジュール及び撮像素子の製造方法
CN103456829B (zh) * 2012-05-30 2016-08-10 国家电网公司 一种单片集成pon网络onu端光收发芯片及其制作方法
CN105977337B (zh) * 2016-07-18 2017-08-25 苏州北鹏光电科技有限公司 低暗电流高速pin探测器及其加工方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437890A (en) * 1963-05-10 1969-04-08 Ibm Diffused-epitaxial scanistors
FR2192379B1 (de) * 1972-07-10 1977-07-22 Radiotechnique Compelec
JPS5517180A (en) * 1978-07-24 1980-02-06 Handotai Kenkyu Shinkokai Light emitting diode display
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
JPS5861682A (ja) * 1981-10-09 1983-04-12 Fujitsu Ltd 半導体受光素子
US5187380A (en) * 1992-04-09 1993-02-16 General Electric Company Low capacitance X-ray radiation detector
US5466948A (en) * 1994-10-11 1995-11-14 John M. Baker Monolithic silicon opto-coupler using enhanced silicon based LEDS
US5587611A (en) 1995-05-08 1996-12-24 Analogic Corporation Coplanar X-ray photodiode assemblies
JPH09275199A (ja) * 1996-04-05 1997-10-21 Olympus Optical Co Ltd 半導体装置及びその製造方法
US6111305A (en) * 1997-10-09 2000-08-29 Nippon Telegraph And Telephone Corporation P-I-N semiconductor photodetector
TW415103B (en) * 1998-03-02 2000-12-11 Ibm Si/SiGe optoelectronic integrated circuits

Also Published As

Publication number Publication date
US20040164370A1 (en) 2004-08-26
KR20040076331A (ko) 2004-09-01
EP1453106B1 (de) 2008-12-24
KR100528331B1 (ko) 2005-11-16
US7015560B2 (en) 2006-03-21
JP2004260181A (ja) 2004-09-16
CN1525573A (zh) 2004-09-01
EP1453106A3 (de) 2006-06-07
EP1453106A2 (de) 2004-09-01
CN100442526C (zh) 2008-12-10

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