DE60202077D1 - Spannungserhöhungs-schaltung mit bestimmung der versorgungsspannung zur kompensation von schwankungen der versorungsspannung beim lesen - Google Patents

Spannungserhöhungs-schaltung mit bestimmung der versorgungsspannung zur kompensation von schwankungen der versorungsspannung beim lesen

Info

Publication number
DE60202077D1
DE60202077D1 DE60202077T DE60202077T DE60202077D1 DE 60202077 D1 DE60202077 D1 DE 60202077D1 DE 60202077 T DE60202077 T DE 60202077T DE 60202077 T DE60202077 T DE 60202077T DE 60202077 D1 DE60202077 D1 DE 60202077D1
Authority
DE
Germany
Prior art keywords
supply voltage
reading
voltage
increase
circuit determining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60202077T
Other languages
English (en)
Other versions
DE60202077T2 (de
Inventor
Q Le
Masaru Yano
Santosh K Yachareni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Application granted granted Critical
Publication of DE60202077D1 publication Critical patent/DE60202077D1/de
Publication of DE60202077T2 publication Critical patent/DE60202077T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
DE60202077T 2001-07-25 2002-03-14 Spannungserhöhungs-schaltung mit bestimmung der versorgungsspannung zur kompensation von schwankungen der versorungsspannung beim lesen Expired - Lifetime DE60202077T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US915018 1992-07-16
US09/915,018 US6535424B2 (en) 2001-07-25 2001-07-25 Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage
PCT/US2002/007642 WO2003012793A1 (en) 2001-07-25 2002-03-14 A voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltages

Publications (2)

Publication Number Publication Date
DE60202077D1 true DE60202077D1 (de) 2004-12-30
DE60202077T2 DE60202077T2 (de) 2005-11-03

Family

ID=25435088

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60202077T Expired - Lifetime DE60202077T2 (de) 2001-07-25 2002-03-14 Spannungserhöhungs-schaltung mit bestimmung der versorgungsspannung zur kompensation von schwankungen der versorungsspannung beim lesen

Country Status (8)

Country Link
US (1) US6535424B2 (de)
EP (1) EP1410396B1 (de)
JP (1) JP2005526338A (de)
KR (1) KR100865587B1 (de)
CN (1) CN100557701C (de)
DE (1) DE60202077T2 (de)
TW (1) TW563136B (de)
WO (1) WO2003012793A1 (de)

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KR100809071B1 (ko) * 2006-09-25 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
KR100908527B1 (ko) * 2007-04-25 2009-07-20 주식회사 하이닉스반도체 불휘발성 메모리 장치의 독출 전압 발생장치
US9134782B2 (en) 2007-05-07 2015-09-15 Nvidia Corporation Maintaining optimum voltage supply to match performance of an integrated circuit
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KR100875012B1 (ko) * 2007-07-25 2008-12-19 주식회사 하이닉스반도체 전압 제공 회로와 이를 구비하는 플래시 메모리 소자 및동작 전압 제공 방법
US7558116B2 (en) * 2007-08-13 2009-07-07 Spansion Llc Regulation of boost-strap node ramp rate using capacitance to counter parasitic elements in channel
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US10366734B2 (en) * 2017-02-03 2019-07-30 Advanced Micro Devices, Inc. Programmable write word line boost for low voltage memory operation
US10236053B1 (en) * 2017-10-17 2019-03-19 R&D 3 Llc Method and circuit device incorporating time-to-transition signal node sensing
CN108344892B (zh) * 2018-04-16 2019-05-03 武汉新芯集成电路制造有限公司 电荷泵电压检测电路
US11300988B2 (en) 2018-08-07 2022-04-12 Battery Savers Inc. Method and system to boost battery voltage
US11061646B2 (en) * 2018-09-28 2021-07-13 Intel Corporation Compute in memory circuits with multi-Vdd arrays and/or analog multipliers
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Also Published As

Publication number Publication date
WO2003012793A1 (en) 2003-02-13
JP2005526338A (ja) 2005-09-02
DE60202077T2 (de) 2005-11-03
US20030021152A1 (en) 2003-01-30
EP1410396B1 (de) 2004-11-24
KR100865587B1 (ko) 2008-10-28
CN1541393A (zh) 2004-10-27
US6535424B2 (en) 2003-03-18
TW563136B (en) 2003-11-21
EP1410396A1 (de) 2004-04-21
KR20040043165A (ko) 2004-05-22
CN100557701C (zh) 2009-11-04

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Legal Events

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