DE68928024D1 - Schalter - Google Patents

Schalter

Info

Publication number
DE68928024D1
DE68928024D1 DE68928024T DE68928024T DE68928024D1 DE 68928024 D1 DE68928024 D1 DE 68928024D1 DE 68928024 T DE68928024 T DE 68928024T DE 68928024 T DE68928024 T DE 68928024T DE 68928024 D1 DE68928024 D1 DE 68928024D1
Authority
DE
Germany
Prior art keywords
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928024T
Other languages
English (en)
Other versions
DE68928024T2 (de
Inventor
Kunihiro Sakai
Haruki Kawada
Hiroshi Matsuda
Kiyoshi Takimoto
Hisaaki Kawade
Yuko Morikawa
Ken Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68928024D1 publication Critical patent/DE68928024D1/de
Publication of DE68928024T2 publication Critical patent/DE68928024T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Light Receiving Elements (AREA)
DE68928024T 1988-02-22 1989-02-20 Schalter Expired - Fee Related DE68928024T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63039829A JP2675803B2 (ja) 1988-02-22 1988-02-22 スイッチング素子

Publications (2)

Publication Number Publication Date
DE68928024D1 true DE68928024D1 (de) 1997-06-12
DE68928024T2 DE68928024T2 (de) 1997-10-02

Family

ID=12563859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928024T Expired - Fee Related DE68928024T2 (de) 1988-02-22 1989-02-20 Schalter

Country Status (4)

Country Link
US (1) US5170238A (de)
EP (1) EP0330395B1 (de)
JP (1) JP2675803B2 (de)
DE (1) DE68928024T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213757B2 (ja) * 1990-04-03 2001-10-02 キヤノン株式会社 情報転送方法、情報転送装置及び画像読出装置
JP3437195B2 (ja) * 1991-10-01 2003-08-18 キヤノン株式会社 Ｍｉｍ型電気素子とその製造方法、及びこれを用いた画像表示装置、描画装置
EP0537642B1 (de) * 1991-10-15 1999-01-07 Canon Kabushiki Kaisha Informationsverarbeitungsgerät mit Spurausrichtungsmechanismus
JPH06187675A (ja) * 1992-09-25 1994-07-08 Canon Inc 情報処理装置、及びそれを用いる情報処理方法
JP3207994B2 (ja) * 1993-02-17 2001-09-10 キヤノン株式会社 走査型プローブ顕微鏡、およびそれを用いた情報記録再生装置
JPH10503858A (ja) * 1995-05-30 1998-04-07 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ スイッチング装置及びその使用
DE69731454T2 (de) * 1996-08-22 2005-10-20 Koninklijke Philips Electronics N.V. Elektooptische schaltvorrichtung
JPH11514759A (ja) * 1996-09-05 1999-12-14 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 光スイッチングデバイス
KR20010040487A (ko) 1998-02-02 2001-05-15 유니액스 코포레이션 Ｘ-ｙ 번지지정 가능한 전기 마이크로스위치 어레이 및이를 사용한 센서 매트릭스
US6572974B1 (en) * 1999-12-06 2003-06-03 The Regents Of The University Of Michigan Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US7220986B2 (en) 2001-09-28 2007-05-22 Japan Science & Technology Agency Photoelectric current multiplier using molecular crystal and production method therefor
WO2005041205A1 (de) * 2003-10-22 2005-05-06 Siemens Aktiengesellschaft Wiederbeschreibbare speichereinheit basierend auf organischen materialien
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
US7255892B2 (en) 2004-06-30 2007-08-14 Hewlett-Packard Development Company, L.P. Molecular layer and method of forming the same
GB2431786B (en) * 2004-08-27 2008-09-24 Fuji Electric Holdings Co Logic circuit
WO2006125730A1 (de) * 2005-05-23 2006-11-30 Siemens Aktiengesellschaft Organischer photodetektor in dünnschichtbauweise
JP2012513119A (ja) * 2008-12-18 2012-06-07 ファースト ソーラー インコーポレイテッド 裏面金属コンタクトを含む光電変換装置
JP5560727B2 (ja) * 2009-08-28 2014-07-30 ソニー株式会社 非接液全固体型タンパク質光電変換素子およびその製造方法ならびに電子機器
DE102019123085A1 (de) * 2019-08-28 2021-03-04 TPMT-Tepin Microelectronic Technology Ltd. Co. Solarzelle, zugehöriges Herstellungs- und Betriebsverfahren sowie Anordnung mit einer Solarzelle und einer Spannungsquelle
DE102019123088A1 (de) * 2019-08-28 2021-03-04 TPMT-Tepin Microelectronic Technology Ltd. Co. Photoschalterstruktur, zugehöriges Herstellungsverfahren sowie Anordnung mit einer Photoschalterstruktur und einer Spannungsquelle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833894A (en) * 1973-06-20 1974-09-03 Ibm Organic memory device
JPS58221562A (ja) * 1982-06-18 1983-12-23 Fuji Xerox Co Ltd 原稿読取装置
US4731756A (en) * 1983-02-07 1988-03-15 The Johns Hopkins University Optical storage and switching devices using organic charge transfer salts
JPS60193326A (ja) * 1984-03-15 1985-10-01 Canon Inc 成膜装置
JPS60194517A (ja) * 1984-03-16 1985-10-03 Canon Inc 単分子累積膜成膜方法
DE3781315T2 (de) * 1986-05-09 1993-03-04 Nippon Oils & Fats Co Ltd Ultraduenne membran vom langmuir-blodgett-typ aus polyfumuraten.
EP0268370B1 (de) * 1986-10-13 1995-06-28 Canon Kabushiki Kaisha Schaltungselement
JPH0777273B2 (ja) * 1986-12-24 1995-08-16 キヤノン株式会社 スイッチング素子およびその駆動方法
GB2202085B (en) * 1987-01-27 1990-02-14 Ricoh Kk Amorphous silicon photosensor

Also Published As

Publication number Publication date
EP0330395B1 (de) 1997-05-07
EP0330395A3 (de) 1990-05-30
EP0330395A2 (de) 1989-08-30
JPH01214078A (ja) 1989-08-28
DE68928024T2 (de) 1997-10-02
US5170238A (en) 1992-12-08
JP2675803B2 (ja) 1997-11-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee