DE69126115D1 - Direkte Entkupplung einer Mikroschaltung - Google Patents

Direkte Entkupplung einer Mikroschaltung

Info

Publication number
DE69126115D1
DE69126115D1 DE69126115T DE69126115T DE69126115D1 DE 69126115 D1 DE69126115 D1 DE 69126115D1 DE 69126115 T DE69126115 T DE 69126115T DE 69126115 T DE69126115 T DE 69126115T DE 69126115 D1 DE69126115 D1 DE 69126115D1
Authority
DE
Germany
Prior art keywords
microcircuit
direct decoupling
decoupling
direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69126115T
Other languages
English (en)
Other versions
DE69126115T2 (de
Inventor
Thomas J Dunaway
Richard Spielberger
Michael W Heinks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69126115D1 publication Critical patent/DE69126115D1/de
Application granted granted Critical
Publication of DE69126115T2 publication Critical patent/DE69126115T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/601Capacitive arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
DE69126115T 1991-01-02 1991-12-24 Direkte Entkupplung einer Mikroschaltung Expired - Lifetime DE69126115T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/636,837 US5140496A (en) 1991-01-02 1991-01-02 Direct microcircuit decoupling

Publications (2)

Publication Number Publication Date
DE69126115D1 true DE69126115D1 (de) 1997-06-19
DE69126115T2 DE69126115T2 (de) 1997-11-13

Family

ID=24553544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126115T Expired - Lifetime DE69126115T2 (de) 1991-01-02 1991-12-24 Direkte Entkupplung einer Mikroschaltung

Country Status (5)

Country Link
US (1) US5140496A (de)
EP (1) EP0493967B1 (de)
JP (1) JP2961673B2 (de)
CA (1) CA2058143C (de)
DE (1) DE69126115T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0747678B2 (ja) * 1988-06-07 1995-05-24 住友ダウ株式会社 艶消し樹脂組成物
US5311057A (en) * 1992-11-27 1994-05-10 Motorola Inc. Lead-on-chip semiconductor device and method for making the same
US5377072A (en) * 1994-01-10 1994-12-27 Motorola Inc. Single metal-plate bypass capacitor
DE19581837T1 (de) * 1994-11-10 1997-10-02 Micron Technology Inc Mehrlagiger Leitungsrahmen für eine Halbleitervorrichtung
US5965936A (en) 1997-12-31 1999-10-12 Micron Technology, Inc. Multi-layer lead frame for a semiconductor device
US5633785A (en) * 1994-12-30 1997-05-27 University Of Southern California Integrated circuit component package with integral passive component
US6014586A (en) * 1995-11-20 2000-01-11 Pacesetter, Inc. Vertically integrated semiconductor package for an implantable medical device
US6285070B1 (en) 1995-12-22 2001-09-04 Micron Technology, Inc. Method of forming semiconductor die with integral decoupling capacitor
US6563192B1 (en) 1995-12-22 2003-05-13 Micron Technology, Inc. Semiconductor die with integral decoupling capacitor
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US5982018A (en) 1997-05-23 1999-11-09 Micron Technology, Inc. Thin film capacitor coupons for memory modules and multi-chip modules
US6054754A (en) * 1997-06-06 2000-04-25 Micron Technology, Inc. Multi-capacitance lead frame decoupling device
US6515359B1 (en) 1998-01-20 2003-02-04 Micron Technology, Inc. Lead frame decoupling capacitor semiconductor device packages including the same and methods
US6114756A (en) 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
US6770963B1 (en) * 2001-01-04 2004-08-03 Broadcom Corporation Multi-power ring chip scale package for system level integration
US6700794B2 (en) * 2001-07-26 2004-03-02 Harris Corporation Decoupling capacitor closely coupled with integrated circuit
US7211884B1 (en) 2002-01-28 2007-05-01 Pacesetter, Inc. Implantable medical device construction using a flexible substrate
US6903448B1 (en) 2002-11-12 2005-06-07 Marvell International Ltd. High performance leadframe in electronic package
JP2008537843A (ja) 2005-03-01 2008-09-25 エックストゥーワイ アテニュエイターズ,エルエルシー 内部で重なり合った調整器
FR3038105B1 (fr) * 2015-06-29 2017-08-04 Oberthur Technologies Module equipe d'un condensateur et d'une antenne, avec disposition d'electrode de condensateur amelioree

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527185A (en) * 1981-01-12 1985-07-02 Avx Corporation Integrated circuit device and subassembly
GB2091035B (en) * 1981-01-12 1985-01-09 Avx Corp Integrated circuit device and sub-assembly
DE3214991A1 (de) * 1982-04-22 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Halbleiterbaustein mit diskretem kondensator
US4458294A (en) * 1982-07-28 1984-07-03 Corning Glass Works Compliant termination for ceramic chip capacitors
DE3303779A1 (de) * 1983-02-04 1984-08-16 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung eines katalytisch wirksamen elektrodenmaterials fuer sauerstoffverzehr-elektroden
JPS59145047U (ja) * 1983-03-17 1984-09-28 九州日本電気株式会社 半導体装置
FR2584865B1 (fr) * 1985-07-12 1988-06-17 Inf Milit Spatiale Aeronaut Composant electronique comportant un condensateur
US4734819A (en) * 1985-12-20 1988-03-29 Rogers Corporation Decoupling capacitor for surface mounted leadless chip carrier, surface mounted leaded chip carrier and pin grid array package
US4903113A (en) * 1988-01-15 1990-02-20 International Business Machines Corporation Enhanced tab package
JPH01239964A (ja) * 1988-03-22 1989-09-25 Nec Corp 半導体集積回路の電源配線レイアウト法
EP0370743A1 (de) * 1988-11-21 1990-05-30 Honeywell Inc. Zusammenbau eines Leiterrahmens mit einem Entkupplungsfilter
JPH02158147A (ja) * 1988-12-09 1990-06-18 Fujitsu Ltd 半導体装置
US4989117A (en) * 1990-02-12 1991-01-29 Rogers Corporation Molded integrated circuit package incorporating thin decoupling capacitor

Also Published As

Publication number Publication date
CA2058143C (en) 1998-12-29
US5140496A (en) 1992-08-18
JPH0575017A (ja) 1993-03-26
JP2961673B2 (ja) 1999-10-12
EP0493967B1 (de) 1997-05-14
DE69126115T2 (de) 1997-11-13
EP0493967A1 (de) 1992-07-08
CA2058143A1 (en) 1992-07-03

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Legal Events

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