DE69920306D1 - Ferroelektrische Speicheranordnung - Google Patents

Ferroelektrische Speicheranordnung

Info

Publication number
DE69920306D1
DE69920306D1 DE69920306T DE69920306T DE69920306D1 DE 69920306 D1 DE69920306 D1 DE 69920306D1 DE 69920306 T DE69920306 T DE 69920306T DE 69920306 T DE69920306 T DE 69920306T DE 69920306 D1 DE69920306 D1 DE 69920306D1
Authority
DE
Germany
Prior art keywords
memory device
ferroelectric memory
ferroelectric
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920306T
Other languages
English (en)
Other versions
DE69920306T2 (de
Inventor
Hidekazu Takata
Hidehiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69920306D1 publication Critical patent/DE69920306D1/de
Publication of DE69920306T2 publication Critical patent/DE69920306T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69920306T 1998-02-24 1999-02-23 Ferroelektrische Speicheranordnung Expired - Fee Related DE69920306T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4145598 1998-02-24
JP04145598A JP3487753B2 (ja) 1998-02-24 1998-02-24 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69920306D1 true DE69920306D1 (de) 2004-10-28
DE69920306T2 DE69920306T2 (de) 2005-10-06

Family

ID=12608859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920306T Expired - Fee Related DE69920306T2 (de) 1998-02-24 1999-02-23 Ferroelektrische Speicheranordnung

Country Status (6)

Country Link
US (1) US6038162A (de)
EP (1) EP0944091B1 (de)
JP (1) JP3487753B2 (de)
KR (1) KR100323985B1 (de)
DE (1) DE69920306T2 (de)
TW (1) TW416051B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100303782B1 (ko) * 1998-10-28 2001-09-24 박종섭 두개의 공급전위를 사용하여 메모리소자의 셀 플레이트 라인을구동하기 위한 장치
JP3604576B2 (ja) * 1999-02-19 2004-12-22 シャープ株式会社 強誘電体メモリ装置
KR100428652B1 (ko) * 2001-03-28 2004-04-29 주식회사 하이닉스반도체 인접 셀간에 셀 플레이트를 공유하는 강유전체 메모리 소자
KR100439756B1 (ko) * 2002-01-09 2004-07-12 주식회사 인피니트테크놀로지 3차원 가상내시경 화면 표시장치 및 그 방법
US6657881B1 (en) * 2002-05-17 2003-12-02 Agilent Technologies, Inc. Reconfiguring storage modes in a memory
US6735106B2 (en) * 2002-07-02 2004-05-11 Agilent Technologies, Inc. Accelerated fatigue testing
JP2004139657A (ja) * 2002-10-17 2004-05-13 Toshiba Corp 半導体集積回路装置
US7193880B2 (en) * 2004-06-14 2007-03-20 Texas Instruments Incorporated Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory
DE10361718A1 (de) * 2003-08-22 2005-03-17 Hynix Semiconductor Inc., Ichon Vorrichtung und Verfahren zum Steuern von nicht flüchtigem DRAM
JP4348228B2 (ja) * 2004-04-05 2009-10-21 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ
JP4119412B2 (ja) * 2004-09-24 2008-07-16 株式会社東芝 集積回路装置及びその試験方法
US7301795B2 (en) * 2004-10-28 2007-11-27 Texas Instruments Incorporated Accelerated low power fatigue testing of FRAM
JP4887853B2 (ja) * 2006-03-17 2012-02-29 富士通セミコンダクター株式会社 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930002470B1 (ko) * 1989-03-28 1993-04-02 가부시키가이샤 도시바 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
US5764561A (en) * 1995-11-16 1998-06-09 Rohm Co., Ltd. Ferroelectric memory devices and method of using ferroelectric capacitors

Also Published As

Publication number Publication date
JP3487753B2 (ja) 2004-01-19
KR100323985B1 (ko) 2002-02-16
KR19990072892A (ko) 1999-09-27
EP0944091B1 (de) 2004-09-22
EP0944091A3 (de) 2000-08-16
JPH11238388A (ja) 1999-08-31
TW416051B (en) 2000-12-21
DE69920306T2 (de) 2005-10-06
US6038162A (en) 2000-03-14
EP0944091A2 (de) 1999-09-22

Similar Documents

Publication Publication Date Title
DE69815600D1 (de) Ferroelektrische Speicheranordnung
DE69921215D1 (de) Ferroelektrische Speicheranordnung
DE69517142D1 (de) Ferroelektrische Speicheranordnung
DE69826955D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69520902D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69510834D1 (de) Halbleiterspeicheranordnung
DE69822280D1 (de) Halbleiterspeicher
DE60019191D1 (de) Nichtflüchtige ferroelektrische Speicheranordnung
DE69521159D1 (de) Halbleiterspeicheranordnung
DE69422901D1 (de) Halbleiterspeicheranordnung
DE69934760D1 (de) Speicherschnittstellengerät
DE69726698D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69722133D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69915704D1 (de) Ampic dram
DE69512700D1 (de) Halbleiterspeicheranordnung
DE69706947D1 (de) Halbleiterspeicher
DE69835635D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE59905214D1 (de) Ferroelektrische speicheranordnung
DE69834540D1 (de) Halbleiterspeicher
KR960012510A (ko) 반도체 메모리 장치
DE69925797D1 (de) Ferroelektrische Speicheranordnung
DE69909280D1 (de) Halbleiterspeicher
DE69934853D1 (de) Halbleiterspeicheranordnung
DE69832683D1 (de) Nichtflüchtiges Halbleiterspeicherbauelement
DE69819961D1 (de) Nichtflüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee