DK134900B - Fremgangsmåde til fremstilling af halvledersiliciummetal ud fra en chlorsilan. - Google Patents

Fremgangsmåde til fremstilling af halvledersiliciummetal ud fra en chlorsilan.

Info

Publication number: DK134900B
Authority: DK; Denmark
Prior art keywords: chlorosilane; preparation; semiconductor silicon; silicon metal; semiconductor
Prior art date: 1969-11-06

Application number

DK561070A

Other languages

English (en)

Other versions

DK134900C (da

Inventor

Howard Burley Bradley

Maurice Howard Jellinek

Original Assignee

Union Carbide Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1969-11-06

Filing date

1970-11-04

Publication date

1977-02-07

1970-11-04 Application filed by Union Carbide Corp filed Critical Union Carbide Corp

1977-02-07 Publication of DK134900B publication Critical patent/DK134900B/da

1977-07-04 Application granted granted Critical

1977-07-04 Publication of DK134900C publication Critical patent/DK134900C/da

Links

239000005046 Chlorosilane Substances 0.000 title 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Inorganic Chemistry (AREA)
Manufacturing & Machinery (AREA)
Mechanical Engineering (AREA)
Silicon Compounds (AREA)

DK561070A 1969-11-06 1970-11-04 Fremgangsmåde til fremstilling af halvledersiliciummetal ud fra en chlorsilan. DK134900B (da)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date
US87444569A	1969-11-06	1969-11-06
US87444469A	1969-11-06	1969-11-06
US8064570A	1970-10-14	1970-10-14

Publications (2)

Publication Number	Publication Date
DK134900B true DK134900B (da)	1977-02-07
DK134900C DK134900C (da)	1977-07-04

Family

ID=27373749

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK561070A DK134900B (da)	1969-11-06	1970-11-04	Fremgangsmåde til fremstilling af halvledersiliciummetal ud fra en chlorsilan.

Country Status (7)

Country	Link
BE (1)	BE758468A (da)
CA (1)	CA959631A (da)
DE (1)	DE2054266A1 (da)
DK (1)	DK134900B (da)
FR (1)	FR2069002A5 (da)
GB (1)	GB1338403A (da)
NL (1)	NL7016148A (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2179930A (en) *	1985-09-06	1987-03-18	Philips Electronic Associated	A method of depositing an epitaxial silicon layer

1970
- 1970-10-30 CA CA096,958A patent/CA959631A/en not_active Expired
- 1970-11-04 FR FR7039664A patent/FR2069002A5/fr not_active Expired
- 1970-11-04 GB GB5252470A patent/GB1338403A/en not_active Expired
- 1970-11-04 DE DE19702054266 patent/DE2054266A1/de active Pending
- 1970-11-04 DK DK561070A patent/DK134900B/da unknown
- 1970-11-04 NL NL7016148A patent/NL7016148A/xx unknown
- 1970-11-04 BE BE758468D patent/BE758468A/xx unknown

Also Published As

Publication number	Publication date
DE2054266A1 (de)	1971-05-13
DK134900C (da)	1977-07-04
NL7016148A (da)	1971-05-10
FR2069002A5 (da)	1971-09-03
CA959631A (en)	1974-12-24
BE758468A (fr)	1971-05-04
GB1338403A (en)	1973-11-21

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