DK141785C - Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasen - Google Patents
Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasenInfo
- Publication number
- DK141785C DK141785C DK532272A DK532272A DK141785C DK 141785 C DK141785 C DK 141785C DK 532272 A DK532272 A DK 532272A DK 532272 A DK532272 A DK 532272A DK 141785 C DK141785 C DK 141785C
- Authority
- DK
- Denmark
- Prior art keywords
- cross
- semiconductor
- electric heating
- crossing
- civil
- Prior art date
Links
- 238000005485 electric heating Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Control Of Resistance Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2153566A DE2153566C3 (de) | 1971-07-07 | 1971-10-27 | Vorrichtung zum elektrischen Beheizen eines sich infolge eines Abscheidungsprozesses aus der Gasphase verdickenden Halbleiterstabes |
| DE2153566 | 1971-10-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK141785B DK141785B (da) | 1980-06-16 |
| DK141785C true DK141785C (da) | 1980-11-03 |
Family
ID=5823559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK532272A DK141785C (da) | 1971-10-27 | 1972-10-26 | Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3980942A (da) |
| JP (1) | JPS4852373A (da) |
| BE (1) | BE790657R (da) |
| DK (1) | DK141785C (da) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3082381A (en) * | 1959-05-27 | 1963-03-19 | Goodyear Aircraft Corp | Automatic gain control circuit |
| US3378639A (en) * | 1960-09-12 | 1968-04-16 | American Seating Co | Instruction apparatus for classrooms |
| US3373959A (en) * | 1965-10-21 | 1968-03-19 | Honeywell Inc | Control apparatus |
| US3700412A (en) * | 1968-12-06 | 1972-10-24 | Kokusai Electric Co Ltd | Crystal pulling apparatus having means for maintaining liquid solid crystal interface at a constant temperature |
| US3577090A (en) * | 1969-08-25 | 1971-05-04 | Shell Oil Co | Fast settling, stable amplifier circuit |
| US3602833A (en) * | 1969-09-23 | 1971-08-31 | Us Navy | Active twin t filter with a positive feedback q control |
| US3602804A (en) * | 1969-12-08 | 1971-08-31 | Acme Electric Corp | Regulator circuit responsive to input voltage,output voltage and current |
| DE2000130B2 (de) * | 1970-01-02 | 1970-12-10 | Erich Ott | Analogregler mit einem Triac als Wechselstromsteller |
| US3623140A (en) * | 1970-01-30 | 1971-11-23 | Forbro Design Corp | Plurality of programmable regulated power supplies share the load in a predetermined ratio with overall stability determined by the master supply |
-
0
- BE BE790657D patent/BE790657R/xx active
-
1972
- 1972-10-24 US US05/299,942 patent/US3980942A/en not_active Expired - Lifetime
- 1972-10-26 JP JP47106720A patent/JPS4852373A/ja active Pending
- 1972-10-26 DK DK532272A patent/DK141785C/da active
Also Published As
| Publication number | Publication date |
|---|---|
| BE790657R (fr) | 1973-02-15 |
| JPS4852373A (da) | 1973-07-23 |
| DK141785B (da) | 1980-06-16 |
| US3980942A (en) | 1976-09-14 |
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