DK1609180T3 - Elektriske forbindelser i substrater - Google Patents
Elektriske forbindelser i substraterInfo
- Publication number
- DK1609180T3 DK1609180T3 DK04722492.8T DK04722492T DK1609180T3 DK 1609180 T3 DK1609180 T3 DK 1609180T3 DK 04722492 T DK04722492 T DK 04722492T DK 1609180 T3 DK1609180 T3 DK 1609180T3
- Authority
- DK
- Denmark
- Prior art keywords
- substrates
- electrical connections
- connections
- electrical
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W20/211—Through-semiconductor vias, e.g. TSVs
- H10W20/217—Through-semiconductor vias, e.g. TSVs comprising ring-shaped isolation structures outside of the via holes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Combinations Of Printed Boards (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0300784A SE526366C3 (sv) | 2003-03-21 | 2003-03-21 | Elektriska anslutningar i substrat |
| PCT/SE2004/000439 WO2004084300A1 (en) | 2003-03-21 | 2004-03-22 | Electrical connections in substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK1609180T3 true DK1609180T3 (da) | 2013-06-24 |
Family
ID=20290745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK04722492.8T DK1609180T3 (da) | 2003-03-21 | 2004-03-22 | Elektriske forbindelser i substrater |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7560802B2 (da) |
| EP (1) | EP1609180B1 (da) |
| JP (1) | JP4944605B2 (da) |
| KR (1) | KR101123002B1 (da) |
| CN (1) | CN1791975B (da) |
| CA (1) | CA2519893C (da) |
| DK (1) | DK1609180T3 (da) |
| SE (1) | SE526366C3 (da) |
| WO (1) | WO2004084300A1 (da) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200644165A (en) * | 2005-05-04 | 2006-12-16 | Icemos Technology Corp | Silicon wafer having through-wafer vias |
| US8105941B2 (en) | 2005-05-18 | 2012-01-31 | Kolo Technologies, Inc. | Through-wafer interconnection |
| CA2607918A1 (en) | 2005-05-18 | 2006-11-23 | Kolo Technologies, Inc. | Micro-electro-mechanical transducers |
| US7946331B2 (en) * | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
| US8456015B2 (en) * | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
| US7851348B2 (en) * | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
| US7786592B2 (en) | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
| US20060281303A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Tack & fuse chip bonding |
| US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
| US7781886B2 (en) | 2005-06-14 | 2010-08-24 | John Trezza | Electronic chip contact structure |
| US7560813B2 (en) | 2005-06-14 | 2009-07-14 | John Trezza | Chip-based thermo-stack |
| US7838997B2 (en) * | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
| US7687400B2 (en) * | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
| EP1907133A4 (en) | 2005-06-17 | 2012-05-09 | Kolo Technologies Inc | MICRO-ELECTRIC MECHANICAL CONVERTER WITH INSULATING EXTENSION |
| US7880565B2 (en) | 2005-08-03 | 2011-02-01 | Kolo Technologies, Inc. | Micro-electro-mechanical transducer having a surface plate |
| DE102005039068A1 (de) * | 2005-08-11 | 2007-02-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleitersubstrat und Verfahren zur Herstellung |
| US20070042563A1 (en) * | 2005-08-19 | 2007-02-22 | Honeywell International Inc. | Single crystal based through the wafer connections technical field |
| US7539003B2 (en) * | 2005-12-01 | 2009-05-26 | Lv Sensors, Inc. | Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes |
| US8308960B2 (en) | 2005-12-14 | 2012-11-13 | Silex Microsystems Ab | Methods for making micro needles and applications thereof |
| US9312217B2 (en) | 2006-02-01 | 2016-04-12 | Silex Microsystems Ab | Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections |
| EP2002477B1 (en) * | 2006-03-27 | 2011-12-21 | Philips Intellectual Property & Standards GmbH | A fabrication method for a low ohmic through substrate connection for semiconductor carriers |
| US7687397B2 (en) * | 2006-06-06 | 2010-03-30 | John Trezza | Front-end processed wafer having through-chip connections |
| US20070281460A1 (en) * | 2006-06-06 | 2007-12-06 | Cubic Wafer, Inc. | Front-end processed wafer having through-chip connections |
| SE530415C2 (sv) | 2006-09-04 | 2008-05-27 | Nanospace Ab | Gastrustor |
| WO2008083284A2 (en) * | 2006-12-29 | 2008-07-10 | Cufer Asset Ltd. L.L.C. | Front-end processed wafer having through-chip connections |
| SE533579C2 (sv) | 2007-01-25 | 2010-10-26 | Silex Microsystems Ab | Metod för mikrokapsling och mikrokapslar |
| US7670874B2 (en) * | 2007-02-16 | 2010-03-02 | John Trezza | Plated pillar package formation |
| JP4792143B2 (ja) * | 2007-02-22 | 2011-10-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US7585750B2 (en) * | 2007-05-04 | 2009-09-08 | Stats Chippac, Ltd. | Semiconductor package having through-hole via on saw streets formed with partial saw |
| FR2916056A1 (fr) * | 2007-05-10 | 2008-11-14 | St Microelectronics Sa | Exploration d'une cavite avec plusieurs capteurs d'image |
| US7894199B1 (en) * | 2008-02-20 | 2011-02-22 | Altera Corporation | Hybrid package |
| US7737409B2 (en) | 2008-06-12 | 2010-06-15 | Analog Devices, Inc. | Silicon detector and method for constructing silicon detectors |
| US9287438B1 (en) * | 2008-07-16 | 2016-03-15 | Solaero Technologies Corp. | Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation |
| NO20083766L (no) | 2008-09-01 | 2010-03-02 | Idex Asa | Overflatesensor |
| US8630033B2 (en) | 2008-12-23 | 2014-01-14 | Silex Microsystems Ab | Via structure and method thereof |
| SE533992C2 (sv) | 2008-12-23 | 2011-03-22 | Silex Microsystems Ab | Elektrisk anslutning i en struktur med isolerande och ledande lager |
| US8309973B2 (en) | 2009-02-12 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based sub-mount for an opto-electronic device |
| SE537499C2 (sv) | 2009-04-30 | 2015-05-26 | Silex Microsystems Ab | Bondningsmaterialstruktur och process med bondningsmaterialstruktur |
| JP5330115B2 (ja) * | 2009-06-17 | 2013-10-30 | 浜松ホトニクス株式会社 | 積層配線基板 |
| US8492901B2 (en) * | 2009-11-06 | 2013-07-23 | International Business Machines Corporation | Metal oxide semiconductor (MOS)-compatible high-aspect ratio through-wafer vias and low-stress configuration thereof |
| JP5218497B2 (ja) | 2009-12-04 | 2013-06-26 | 株式会社デンソー | 半導体装置およびその製造方法 |
| FR2953992B1 (fr) | 2009-12-15 | 2012-05-18 | Commissariat Energie Atomique | Realisation de structures d'interconnexions tsv formees d'un contour isolant et d'une zone conductrice situee dans le contour et disjointe du contour |
| NO20093601A1 (no) | 2009-12-29 | 2011-06-30 | Idex Asa | Overflatesensor |
| US8288243B2 (en) * | 2010-04-15 | 2012-10-16 | Texas Instruments Incorporated | Method for fabricating through substrate microchannels |
| US8492260B2 (en) | 2010-08-30 | 2013-07-23 | Semionductor Components Industries, LLC | Processes of forming an electronic device including a feature in a trench |
| FR2964793B1 (fr) * | 2010-09-09 | 2014-04-11 | Ipdia | Dispositif d'interposition |
| US8440544B2 (en) | 2010-10-06 | 2013-05-14 | International Business Machines Corporation | CMOS structure and method of manufacture |
| JP5206826B2 (ja) | 2011-03-04 | 2013-06-12 | 株式会社デンソー | 領域分割基板およびそれを用いた半導体装置ならびにそれらの製造方法 |
| SE536530C2 (sv) | 2011-04-21 | 2014-02-04 | Silex Microsystems Ab | Startsubstrat för halvledarteknologi med substratgenomgåendekopplingar och en metod för tillverkning därav |
| SE538018C2 (sv) | 2011-12-22 | 2016-02-09 | Silex Microsystems Ab | Isolering av mikrostrukturer |
| JP2013140838A (ja) * | 2011-12-28 | 2013-07-18 | Sumitomo Precision Prod Co Ltd | 半導体装置及びその製造方法 |
| SE538058C2 (sv) * | 2012-03-30 | 2016-02-23 | Silex Microsystems Ab | Metod att tillhandahålla ett viahål och en routing-struktur |
| JP6154583B2 (ja) | 2012-06-14 | 2017-06-28 | ラピスセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
| SE537406C2 (sv) | 2012-06-21 | 2015-04-21 | Silex Microsystems Ab | Halvledaranordning och metod för tillverkning av halvledaranordning med skivgenomgående anslutningar |
| US9012324B2 (en) * | 2012-08-24 | 2015-04-21 | United Microelectronics Corp. | Through silicon via process |
| US8981533B2 (en) | 2012-09-13 | 2015-03-17 | Semiconductor Components Industries, Llc | Electronic device including a via and a conductive structure, a process of forming the same, and an interposer |
| US9030584B2 (en) | 2013-03-18 | 2015-05-12 | Omnivision Technologies, Inc. | Image sensor with substrate noise isolation |
| CN103413785B (zh) * | 2013-08-02 | 2015-08-26 | 南通富士通微电子股份有限公司 | 芯片切割方法及芯片封装方法 |
| US9385187B2 (en) | 2014-04-25 | 2016-07-05 | Texas Instruments Incorporated | High breakdown N-type buried layer |
| US9318376B1 (en) | 2014-12-15 | 2016-04-19 | Freescale Semiconductor, Inc. | Through substrate via with diffused conductive component |
| CN106159073B (zh) * | 2015-04-23 | 2020-06-16 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
| US9812354B2 (en) | 2015-05-15 | 2017-11-07 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a material defining a void |
| US10315915B2 (en) | 2015-07-02 | 2019-06-11 | Kionix, Inc. | Electronic systems with through-substrate interconnects and MEMS device |
| US10158164B2 (en) | 2015-10-30 | 2018-12-18 | Essential Products, Inc. | Handheld mobile device with hidden antenna formed of metal injection molded substrate |
| US9882275B2 (en) | 2015-10-30 | 2018-01-30 | Essential Products, Inc. | Antennas for handheld devices |
| US9896777B2 (en) | 2015-10-30 | 2018-02-20 | Essential Products, Inc. | Methods of manufacturing structures having concealed components |
| US10546816B2 (en) * | 2015-12-10 | 2020-01-28 | Nexperia B.V. | Semiconductor substrate with electrically isolating dielectric partition |
| KR102479946B1 (ko) | 2016-04-06 | 2022-12-22 | 해성디에스 주식회사 | 반도체 패키지 기판 및 그 제조방법 |
| US10957537B2 (en) * | 2018-11-12 | 2021-03-23 | Hrl Laboratories, Llc | Methods to design and uniformly co-fabricate small vias and large cavities through a substrate |
| EP3923315B1 (en) * | 2020-06-11 | 2024-01-24 | ASML Netherlands B.V. | Manipulator, manipulator array, charged particle tool, multibeam charged particle tool, and method of manipulating a charged particle beam |
| US12509346B2 (en) * | 2022-10-25 | 2025-12-30 | Robert Bosch Gmbh | Laser sealing methods for closing ventholes of micromecahnical devices |
| CN117238840B (zh) * | 2023-11-14 | 2024-02-27 | 合肥晶合集成电路股份有限公司 | 背照式图像传感器及制备方法、深沟槽隔离结构制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278368A (ja) * | 1987-05-11 | 1988-11-16 | Nec Corp | 半導体基板のバイアホ−ル形成方法 |
| US5616421A (en) * | 1991-04-08 | 1997-04-01 | Aluminum Company Of America | Metal matrix composites containing electrical insulators |
| US6002177A (en) * | 1995-12-27 | 1999-12-14 | International Business Machines Corporation | High density integrated circuit packaging with chip stacking and via interconnections |
| EP0974817A4 (en) * | 1997-04-03 | 2006-09-13 | Yamatake Corp | CIRCUIT BOARD, DETECTOR AND METHOD FOR THE PRODUCTION THEREOF |
| JP3418548B2 (ja) * | 1997-04-03 | 2003-06-23 | 株式会社山武 | 回路基板およびその製造方法 |
| EP0926726A1 (en) * | 1997-12-16 | 1999-06-30 | STMicroelectronics S.r.l. | Fabrication process and electronic device having front-back through contacts for bonding onto boards |
| JP3161524B2 (ja) * | 1998-06-12 | 2001-04-25 | 日本電気株式会社 | 半導体装置、及びその製造方法 |
| JP2000349087A (ja) * | 1999-06-04 | 2000-12-15 | Hitachi Ltd | 半導体装置およびそれを用いた回路 |
| FR2797140B1 (fr) * | 1999-07-30 | 2001-11-02 | Thomson Csf Sextant | Procede de fabrication de connexions traversantes dans un substrat et substrat equipe de telles connexions |
| FR2805709B1 (fr) * | 2000-02-28 | 2002-05-17 | Commissariat Energie Atomique | Connexion electrique entre deux faces d'un substrat et procede de realisation |
| US6825967B1 (en) * | 2000-09-29 | 2004-11-30 | Calient Networks, Inc. | Shaped electrodes for micro-electro-mechanical-system (MEMS) devices to improve actuator performance and methods for fabricating the same |
| DE60035994T2 (de) * | 2000-10-04 | 2008-06-05 | Qimonda Ag | Verfahren zur Herstellung eines dünnen selbsttragenden Halbleitervorrichtungsfilms und einer dreidimensionalen Halbleitervorrichtung |
| EP1412129A4 (en) * | 2001-08-02 | 2008-04-02 | Skc Co Ltd | METHOD FOR PRODUCING A CHEMICAL-MECHANICAL POLISHING PILLOW USING LASER |
| EP2560199B1 (en) * | 2002-04-05 | 2016-08-03 | STMicroelectronics S.r.l. | Process for manufacturing a through insulated interconnection in a body of semiconductor material |
-
2003
- 2003-03-21 SE SE0300784A patent/SE526366C3/sv not_active IP Right Cessation
-
2004
- 2004-03-22 US US10/550,199 patent/US7560802B2/en not_active Expired - Lifetime
- 2004-03-22 EP EP04722492.8A patent/EP1609180B1/en not_active Expired - Lifetime
- 2004-03-22 JP JP2006507977A patent/JP4944605B2/ja not_active Expired - Lifetime
- 2004-03-22 WO PCT/SE2004/000439 patent/WO2004084300A1/en not_active Ceased
- 2004-03-22 CA CA2519893A patent/CA2519893C/en not_active Expired - Lifetime
- 2004-03-22 DK DK04722492.8T patent/DK1609180T3/da active
- 2004-03-22 CN CN2004800139324A patent/CN1791975B/zh not_active Expired - Lifetime
- 2004-03-22 KR KR1020057017686A patent/KR101123002B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006521022A (ja) | 2006-09-14 |
| HK1084236A1 (en) | 2006-07-21 |
| CN1791975B (zh) | 2012-05-09 |
| US7560802B2 (en) | 2009-07-14 |
| CA2519893C (en) | 2013-03-12 |
| WO2004084300A1 (en) | 2004-09-30 |
| SE526366C3 (sv) | 2005-10-26 |
| CA2519893A1 (en) | 2004-09-30 |
| SE0300784L (sv) | 2004-09-22 |
| SE0300784D0 (sv) | 2003-03-21 |
| KR20060003333A (ko) | 2006-01-10 |
| CN1791975A (zh) | 2006-06-21 |
| US20070020926A1 (en) | 2007-01-25 |
| EP1609180A1 (en) | 2005-12-28 |
| SE526366C2 (sv) | 2005-08-30 |
| JP4944605B2 (ja) | 2012-06-06 |
| EP1609180B1 (en) | 2013-04-17 |
| KR101123002B1 (ko) | 2012-03-16 |
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