DK1950807T3 - Power semiconductor module with pressure body - Google Patents

Power semiconductor module with pressure body

Info

Publication number
DK1950807T3
DK1950807T3 DK08000992T DK08000992T DK1950807T3 DK 1950807 T3 DK1950807 T3 DK 1950807T3 DK 08000992 T DK08000992 T DK 08000992T DK 08000992 T DK08000992 T DK 08000992T DK 1950807 T3 DK1950807 T3 DK 1950807T3
Authority
DK
Denmark
Prior art keywords
power semiconductor
pressure
load connection
semiconductor module
pressure body
Prior art date
Application number
DK08000992T
Other languages
Danish (da)
Inventor
Ludwig Hager
Herwig Moser
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Application granted granted Critical
Publication of DK1950807T3 publication Critical patent/DK1950807T3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H10W76/63—Seals characterised by their shape or disposition, e.g. between cap and walls of a container
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

The power semiconductor module has a substrate in a pressure contact design. A power semiconductor component is arranged on the substrate. The power semiconductor module has a housing, outward leading load connection elements (40,42) and a pressure device. A pressure body (80) is arranged between the pressure device and a load connection element. A part of the pressure body is passed by the load connection element, and formed a pressure on a pressure receiving area (424) of the assigned load connection element. The load connection elements are partly coated with plastic or ceramic.
DK08000992T 2007-01-24 2008-01-19 Power semiconductor module with pressure body DK1950807T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200710003587 DE102007003587B4 (en) 2007-01-24 2007-01-24 Power semiconductor module with pressure body

Publications (1)

Publication Number Publication Date
DK1950807T3 true DK1950807T3 (en) 2009-08-03

Family

ID=39310570

Family Applications (1)

Application Number Title Priority Date Filing Date
DK08000992T DK1950807T3 (en) 2007-01-24 2008-01-19 Power semiconductor module with pressure body

Country Status (5)

Country Link
EP (1) EP1950807B1 (en)
AT (1) ATE430988T1 (en)
DE (2) DE102007003587B4 (en)
DK (1) DK1950807T3 (en)
ES (1) ES2324845T3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157457A (en) * 2009-12-05 2011-08-17 赛米控电子股份有限公司 Pressure-contacted power semiconductor module with tape-like load connection elements

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009057146B4 (en) 2009-12-05 2013-09-26 Semikron Elektronik Gmbh & Co. Kg Pressure-contacted power semiconductor module with hybrid pressure accumulator
DE102013104950B3 (en) * 2013-05-14 2014-04-30 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module and arrangement hereby
DE102019009143B4 (en) 2019-06-07 2026-02-12 Semikron Danfoss Elektronik Gmbh & Co. Kg Power electronic submodule with DC and AC potential connection surfaces

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728313A1 (en) 1977-06-23 1979-01-04 Siemens Ag SEMICONDUCTOR COMPONENT
DE19530264A1 (en) * 1995-08-17 1997-02-20 Abb Management Ag Power semiconductor module
DE19719703C5 (en) 1997-05-09 2005-11-17 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Power semiconductor module with ceramic substrate
EP1263045A1 (en) * 2001-06-01 2002-12-04 ABB Schweiz AG High power semiconductor module
DE102006006423B4 (en) 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module and associated manufacturing method
DE102006006424B4 (en) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Arrangement with at least one power semiconductor module and a cooling component and associated manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157457A (en) * 2009-12-05 2011-08-17 赛米控电子股份有限公司 Pressure-contacted power semiconductor module with tape-like load connection elements
CN102157457B (en) * 2009-12-05 2015-04-29 赛米控电子股份有限公司 Pressure-contacted power semiconductor module with tape-like load connection elements

Also Published As

Publication number Publication date
ES2324845T3 (en) 2009-08-17
DE102007003587A1 (en) 2008-08-07
DE102007003587B4 (en) 2009-06-10
DE502008000015D1 (en) 2009-06-18
EP1950807B1 (en) 2009-05-06
EP1950807A1 (en) 2008-07-30
ATE430988T1 (en) 2009-05-15

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