DK200000188A - A method for fabricating nanoscale patterns in a surface - Google Patents
A method for fabricating nanoscale patterns in a surface Download PDFInfo
- Publication number
- DK200000188A DK200000188A DK200000188A DKPA200000188A DK200000188A DK 200000188 A DK200000188 A DK 200000188A DK 200000188 A DK200000188 A DK 200000188A DK PA200000188 A DKPA200000188 A DK PA200000188A DK 200000188 A DK200000188 A DK 200000188A
- Authority
- DK
- Denmark
- Prior art keywords
- range
- operation parameters
- nanoscale patterns
- fabricating nanoscale
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002891 organic anions Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
Landscapes
- Micromachines (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Description
CLAIMS 1. A method for forming at least one nanoscale depression in a surface of a substrate, said method comprising the steps of: - immersing at least part of the surface of the substrate into a liquid environment, - immersing at least part of an object into the liquid environment, - bringing the object within proximity of the surface of the substrate by applying a first set of operation parameters, said first set of operation parameters comprising bias voltage, tunnel current and working potential, and - forming at least one nanoscale depression in the surface of the substrate by applying a second set of operation parameters, said second set of operation parameters comprising bias voltage, tunnel current and working potential, wherein the bias voltage of the second set of operation parameters is negative. 2. A method according to claim 1, wherein the liquid environment is an electrically conducting environment. 3. A method according to claim 1 or 2, wherein the object forms part of a scanning probe microscope, such as a scanning tunneling microscope. 4. A method according to claim 3, wherein the object forms part of a tunneling tip. 5. A method according to any of the preceding claims, wherein the bias voltage of the second set of operation parameters is in the range -10 mV - 0 V, preferably in the range -8 mV - 0 V, more preferably in the range -4 mV - 0 V, such as approximately -2 mV. 6. A method according to any of the preceding claims, wherein the tunnel current of the second set of operation parameters is in the range 0-10 nA, preferably in the range O - 6 nA, more preferably in the range 0-4 nA, even more preferably in the range 2 - 3 nA. 7. A method according to any of the preceding claims, wherein the working potential of the second set of operation parameters is in the range -0,1 - 0,5 V vs NHE, preferably in the range 0 - 0,4 V vs NHE, more preferably in the range 0,1 - 0,3 V vs NHE. 8. A method according to any of the preceding claims, wherein the bias voltage of the first set of operation parameters is in the range 100-300 mV, and wherein the tunnel current of the first set of operation parameters is in the range 0.5-5 nA, and wherein the working potential of the first set of operation parameters is in the range 0.1-0.6 V vs NHE. 9. A method according to claim 2, wherein the electrically conducting environment comprises an aqueous acidic, basic, neutral, or salt containing electrolyte solution such as HCI04. 10. A method according to claim 9, wherein the concentration of the HCI04 solution is in the range 10'3-10 M, preferably in the range 0,02-0,4 M, more preferably in the range 0,03-0,3 M and even more preferably in the range 0,05-0,1 M. 11. A method according to any of the preceding claims, wherein part of the surface of the substrate holds an electrically conducting material, such as a metal, so that the at least one depression is formed in said electrically conducting material. 12. A method according to any of the preceding claims, wherein part of the surface of the substrate holds a gold film, or constitutes bulk gold. 13. A method according to claim 1, wherein the liquid environment comprises chloride, sulphate, or other adsorbing inorganic or organic anions or molecules. 14. A method according to any of the preceding claims, wherein part of the surface of the substrate holds a semiconductor material, such as silicon. 15. A method according to claim 1, wherein the object forms part of a tip of a commercially available scanning probe microscope, such as a scanning tunneling microscope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DK200000188A DK174913B1 (da) | 1999-02-05 | 2000-02-04 | Fremgangsmåde til fremstilling af nanoskalamønstre på en overflade |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DK15699 | 1999-02-05 | ||
| DKPA199900156 | 1999-02-05 | ||
| DK200000188 | 2000-02-04 | ||
| DK200000188A DK174913B1 (da) | 1999-02-05 | 2000-02-04 | Fremgangsmåde til fremstilling af nanoskalamønstre på en overflade |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK200000188A true DK200000188A (da) | 2000-08-06 |
| DK174913B1 DK174913B1 (da) | 2004-02-16 |
Family
ID=26063417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK200000188A DK174913B1 (da) | 1999-02-05 | 2000-02-04 | Fremgangsmåde til fremstilling af nanoskalamønstre på en overflade |
Country Status (1)
| Country | Link |
|---|---|
| DK (1) | DK174913B1 (da) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1233412A3 (en) * | 2001-02-15 | 2003-10-08 | Hewlett-Packard Company | Data storage device |
-
2000
- 2000-02-04 DK DK200000188A patent/DK174913B1/da not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1233412A3 (en) * | 2001-02-15 | 2003-10-08 | Hewlett-Packard Company | Data storage device |
| CN100437791C (zh) * | 2001-02-15 | 2008-11-26 | 惠普公司 | 包括在探头触点和存储介质之间的传导介质的数据存储设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| DK174913B1 (da) | 2004-02-16 |
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