DK209788A - Apparat til traekning af enkrystaller - Google Patents

Apparat til traekning af enkrystaller

Info

Publication number: DK209788A
Authority: DK; Denmark
Prior art keywords: single crystals; drawing single; crystals
Prior art date: 1987-10-03

Application number

DK209788A

Other languages

English (en)

Other versions

DK209788D0 (da

Inventor

Dieter Drechsel

Karl Jericho

Original Assignee

Leybold Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-10-03

Filing date

1988-04-18

Publication date

1989-04-04

1988-04-18 Application filed by Leybold Ag filed Critical Leybold Ag

1988-04-18 Publication of DK209788D0 publication Critical patent/DK209788D0/da

1989-04-04 Publication of DK209788A publication Critical patent/DK209788A/da

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B15/00—Drawing glass upwardly from the melt
- C03B15/14—Drawing tubes, cylinders, or rods from the melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Metallurgy (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DK209788A 1987-10-03 1988-04-18 Apparat til traekning af enkrystaller DK209788A (da)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE3733487A DE3733487C2 (de)	1987-10-03	1987-10-03	Vorrichtung zum Ziehen von Einkristallen

Publications (2)

Publication Number	Publication Date
DK209788D0 DK209788D0 (da)	1988-04-18
DK209788A true DK209788A (da)	1989-04-04

Family

ID=6337565

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK209788A DK209788A (da)	1987-10-03	1988-04-18	Apparat til traekning af enkrystaller

Country Status (6)

Country	Link
EP (1)	EP0310739B1 (da)
JP (1)	JP2635688B2 (da)
KR (1)	KR960009700B1 (da)
DE (2)	DE3733487C2 (da)
DK (1)	DK209788A (da)
FI (1)	FI88313C (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0633218B2 (ja) *	1987-12-08	1994-05-02	日本鋼管株式会社	シリコン単結晶の製造装置
JP3774920B2 (ja) *	1995-12-27	2006-05-17	信越半導体株式会社	単結晶引上装置のヒータ機構
DE19830785A1 (de) *	1998-07-09	2000-01-13	Wacker Siltronic Halbleitermat	Stütztiegel zur Stützung von Schmelztiegeln
JP5131170B2 (ja) *	2008-12-05	2013-01-30	信越半導体株式会社	単結晶製造用上部ヒーターおよび単結晶製造装置ならびに単結晶製造方法
US8944354B2 (en)	2011-09-30	2015-02-03	Starbucks Corporation	Apparatus, systems, and methods for grinding a material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3359077A (en) *	1964-05-25	1967-12-19	Globe Union Inc	Method of growing a crystal
GB1095587A (da) *	1965-09-24
US3511610A (en) *	1966-10-14	1970-05-12	Gen Motors Corp	Silicon crystal growing
JPS60103097A (ja) *	1983-11-08	1985-06-07	Sumitomo Electric Ind Ltd	単結晶引上装置
CA1261715A (en) *	1984-07-06	1989-09-26	General Signal Corporation	Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6153187A (ja) *	1984-08-24	1986-03-17	Sony Corp	単結晶成長装置
IN161924B (da) *	1984-10-29	1988-02-27	Westinghouse Electric Corp
DE3506754A1 (de) *	1985-02-26	1986-08-28	Leybold-Heraeus GmbH, 5000 Köln	Klemmverbindung in elektrisch beheizten vakuumanlagen

1987
- 1987-10-03 DE DE3733487A patent/DE3733487C2/de not_active Expired - Fee Related
1988
- 1988-03-10 DE DE8888103768T patent/DE3877486D1/de not_active Expired - Fee Related
- 1988-03-10 EP EP88103768A patent/EP0310739B1/de not_active Expired - Lifetime
- 1988-04-18 DK DK209788A patent/DK209788A/da not_active Application Discontinuation
- 1988-06-14 JP JP63144912A patent/JP2635688B2/ja not_active Expired - Lifetime
- 1988-09-14 KR KR1019880011865A patent/KR960009700B1/ko not_active Expired - Lifetime
- 1988-09-30 FI FI884510A patent/FI88313C/fi not_active IP Right Cessation

Also Published As

Publication number	Publication date
JP2635688B2 (ja)	1997-07-30
FI88313C (fi)	1993-04-26
KR890006529A (ko)	1989-06-14
DE3877486D1 (de)	1993-02-25
EP0310739A2 (de)	1989-04-12
EP0310739A3 (en)	1990-06-27
FI884510A7 (fi)	1989-04-04
EP0310739B1 (de)	1993-01-13
DK209788D0 (da)	1988-04-18
FI88313B (fi)	1993-01-15
JPH0196087A (ja)	1989-04-14
DE3733487A1 (de)	1989-04-13
DE3733487C2 (de)	1997-08-14
KR960009700B1 (ko)	1996-07-23
FI884510A0 (fi)	1988-09-30

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Legal Events

Date	Code	Title	Description
1999-08-30	AHS	Application shelved for other reasons than non-payment