DK2142686T3 - Fremgangsmåde til at fremstille en enkeltkrystal. - Google Patents
Fremgangsmåde til at fremstille en enkeltkrystal. Download PDFInfo
- Publication number
- DK2142686T3 DK2142686T3 DK07722699.1T DK07722699T DK2142686T3 DK 2142686 T3 DK2142686 T3 DK 2142686T3 DK 07722699 T DK07722699 T DK 07722699T DK 2142686 T3 DK2142686 T3 DK 2142686T3
- Authority
- DK
- Denmark
- Prior art keywords
- single crystal
- rod
- magnetic field
- clockwise
- polycrystalline
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 230000004907 flux Effects 0.000 claims description 18
- 239000000155 melt Substances 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000012768 molten material Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 5
- 230000008569 process Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241000380131 Ammophila arenaria Species 0.000 description 1
- 101100532065 Arabidopsis thaliana RTM3 gene Proteins 0.000 description 1
- 101100243951 Caenorhabditis elegans pie-1 gene Proteins 0.000 description 1
- 241001137251 Corvidae Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 240000005561 Musa balbisiana Species 0.000 description 1
- 235000018290 Musa x paradisiaca Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 235000015108 pies Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/26—Stirring of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Claims (6)
1. Fremgangsmåde til fremstilling af siliciumenkeltkrystal omfattende trinnene at føre en polykrystallinsk siliciumstav gennem et opvarmningsområde for at danne en smeltezone, at påtrykke smeltezonen et magnetfelt, hvilket magnetfelt er rettet aksialt i forhold til den polykrystallinske siliciumstav og dannet ved at føre en elektrisk jævnstrøm gennem en solenoidspole, der er anbragt til at omgive smeltezonen, og at inducere dannelse og vækst af en siliciumenkeltkrystal ved størkning af det smeltede materiale på et siliciumenkeltkrystalkim, kendetegnet ved, at den voksende siliciumenkeltkrystal roteres i et mønster, der veksler mellem rotationsretninger med uret og mod uret, ved at fluxtætheden af det aksiale magnetfelt er i intervallet fra 0,005 til 0,015 T, og ved at diameteren af den trukne siliciumenkeltkrystal er i intervallet fra 75 mm til 350 mm.
2. Fremgangsmåde ifølge krav 1, hvor den polykrystallinske siliciumstav roteres ved en rotationshastighed på 0,5 til 40 rpm.
3. Fremgangsmåde ifølge et hvilket som helst af kravene 1 eller 2, hvor rotationshastigheden af rotationerne med uret og mod uret er i intervallet fra 10 til 18 rpm.
4. Fremgangsmåde ifølge et hvilket som helst af kravene 1 til 3, hvor varighederne af rotationerne med uret og mod uret er i intervallet fra 2 til 10 sekunder.
5. Fremgangsmåde ifølge et hvilket som helst af kravene 1 til 4 omfattende en relativ bevægelse mellem den polykrystallinske siliciumstav og opvarmningsområdet, hvilket forårsager en bevægelse af smeltezonen mod én ende af den polykrystallinske siliciumstav.
6. Fremgangsmåde ifølge et hvilket som helst af kravene 1 til 5 ydermere omfattende trinnet at skære den fremstillede siliciumenkeltkrystal i én eller flere wafers.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/DK2007/050044 WO2008125104A1 (en) | 2007-04-13 | 2007-04-13 | Method and apparatus for producing a single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2142686T3 true DK2142686T3 (da) | 2019-04-08 |
Family
ID=38754122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK07722699.1T DK2142686T3 (da) | 2007-04-13 | 2007-04-13 | Fremgangsmåde til at fremstille en enkeltkrystal. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20100107968A1 (da) |
| EP (1) | EP2142686B1 (da) |
| JP (1) | JP5485136B2 (da) |
| KR (1) | KR20100016121A (da) |
| CN (1) | CN101680108A (da) |
| CA (1) | CA2688739C (da) |
| DK (1) | DK2142686T3 (da) |
| EA (1) | EA017453B1 (da) |
| WO (1) | WO2008125104A1 (da) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4831203B2 (ja) * | 2009-04-24 | 2011-12-07 | 信越半導体株式会社 | 半導体単結晶の製造方法および半導体単結晶の製造装置 |
| DK2679706T3 (da) * | 2011-02-23 | 2018-12-17 | Shinetsu Handotai Kk | Fremgangsmåde til fremstilling af n-type siliciummonokrystal |
| JP5234148B2 (ja) * | 2011-08-04 | 2013-07-10 | 信越半導体株式会社 | 半導体単結晶の製造方法および半導体単結晶の製造装置 |
| JP5594257B2 (ja) * | 2011-08-19 | 2014-09-24 | 信越半導体株式会社 | 単結晶製造方法 |
| DE102011089429A1 (de) * | 2011-12-21 | 2013-06-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
| CN102899716B (zh) * | 2012-09-14 | 2015-04-08 | 北京京运通科技股份有限公司 | 一种双向平动机构及区熔单晶炉 |
| CN103114325A (zh) * | 2013-02-25 | 2013-05-22 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
| CN103114326A (zh) * | 2013-02-25 | 2013-05-22 | 天津市环欧半导体材料技术有限公司 | 一种区熔气相掺杂硅单晶的生产方法 |
| JP5888264B2 (ja) * | 2013-02-28 | 2016-03-16 | 信越半導体株式会社 | 半導体単結晶の製造方法 |
| US9255343B2 (en) | 2013-03-08 | 2016-02-09 | Ut-Battelle, Llc | Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal |
| CN103539136B (zh) * | 2013-10-29 | 2015-09-02 | 新疆华莎能源股份有限公司 | 一种工业化生产高纯镁橄榄石晶体材料的方法 |
| DE102014226419A1 (de) * | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
| JP5892527B1 (ja) * | 2015-01-06 | 2016-03-23 | 信越化学工業株式会社 | 太陽電池用ｆｚシリコン単結晶の製造方法及び太陽電池の製造方法 |
| WO2017137438A1 (en) | 2016-02-08 | 2017-08-17 | Topsil Globalwafers A/S | A phosphorus doped silicon single crystal |
| DE102017202311A1 (de) | 2017-02-14 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| DE102017202420A1 (de) | 2017-02-15 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| DE102017202413A1 (de) | 2017-02-15 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| DE102018210317A1 (de) | 2018-06-25 | 2020-01-02 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium |
| EP4144894B1 (de) | 2021-09-07 | 2025-06-18 | Siltronic AG | Verfahren zum herstellen eines einkristalls aus silicium |
| CN113943973A (zh) * | 2021-10-26 | 2022-01-18 | 中国电子科技集团公司第四十六研究所 | 一种拉制高电阻率区熔单晶硅的工艺方法 |
| JP7730768B2 (ja) * | 2022-01-21 | 2025-08-28 | 信越化学工業株式会社 | 単結晶シリコンの製造方法及び評価方法 |
| EP4312248A1 (en) | 2022-07-27 | 2024-01-31 | Siltronic AG | A heteroepitaxial wafer for the deposition of gallium nitride |
| CN121629512B (zh) * | 2026-02-04 | 2026-04-10 | 苏州晨晖智能设备有限公司 | 一种同心圆缺陷降低的含锑单晶硅棒、其制备方法及硅片 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD263310A1 (de) * | 1987-08-17 | 1988-12-28 | Akad Wissenschaften Ddr | Verfahren zur halbleiterkristallzuechtung aus elektrisch leitfaehigen schmelzen |
| DE3805118A1 (de) * | 1988-02-18 | 1989-08-24 | Wacker Chemitronic | Verfahren zum tiegelfreien zonenziehen von halbleiterstaeben und induktionsheizspule zu seiner durchfuehrung |
| JP2623390B2 (ja) * | 1991-03-22 | 1997-06-25 | 信越半導体株式会社 | シリコン単結晶棒の成長方法 |
| EP0504929B1 (en) * | 1991-03-22 | 1996-08-28 | Shin-Etsu Handotai Company Limited | Method of growing silicon monocrystalline rod |
| JP2874722B2 (ja) * | 1993-06-18 | 1999-03-24 | 信越半導体株式会社 | シリコン単結晶の成長方法及び装置 |
| JP2820027B2 (ja) * | 1994-05-24 | 1998-11-05 | 信越半導体株式会社 | 半導体単結晶の成長方法 |
| JP2002249393A (ja) | 2001-02-15 | 2002-09-06 | Komatsu Electronic Metals Co Ltd | Ｆｚ法半導体単結晶成長方法 |
| DE10137856B4 (de) * | 2001-08-02 | 2007-12-13 | Siltronic Ag | Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium |
| DE10137857B4 (de) * | 2001-08-02 | 2006-11-16 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls |
| DE10216609B4 (de) * | 2002-04-15 | 2005-04-07 | Siltronic Ag | Verfahren zur Herstellung der Halbleiterscheibe |
-
2007
- 2007-04-13 CN CN200780052807A patent/CN101680108A/zh active Pending
- 2007-04-13 KR KR1020097022849A patent/KR20100016121A/ko not_active Abandoned
- 2007-04-13 CA CA2688739A patent/CA2688739C/en not_active Expired - Fee Related
- 2007-04-13 EA EA200970941A patent/EA017453B1/ru not_active IP Right Cessation
- 2007-04-13 DK DK07722699.1T patent/DK2142686T3/da active
- 2007-04-13 US US12/595,647 patent/US20100107968A1/en not_active Abandoned
- 2007-04-13 EP EP07722699.1A patent/EP2142686B1/en active Active
- 2007-04-13 JP JP2010502418A patent/JP5485136B2/ja active Active
- 2007-04-13 WO PCT/DK2007/050044 patent/WO2008125104A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CA2688739A1 (en) | 2008-10-23 |
| CN101680108A (zh) | 2010-03-24 |
| EP2142686B1 (en) | 2018-12-12 |
| JP5485136B2 (ja) | 2014-05-07 |
| US20100107968A1 (en) | 2010-05-06 |
| CA2688739C (en) | 2015-05-26 |
| EP2142686A1 (en) | 2010-01-13 |
| EA200970941A1 (ru) | 2010-04-30 |
| KR20100016121A (ko) | 2010-02-12 |
| JP2010523459A (ja) | 2010-07-15 |
| WO2008125104A1 (en) | 2008-10-23 |
| EA017453B1 (ru) | 2012-12-28 |
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