DK2883291T3 - Bølgelængdeafstemmelig laserkilde - Google Patents

Bølgelængdeafstemmelig laserkilde Download PDF

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Publication number
DK2883291T3
DK2883291T3 DK13745681.0T DK13745681T DK2883291T3 DK 2883291 T3 DK2883291 T3 DK 2883291T3 DK 13745681 T DK13745681 T DK 13745681T DK 2883291 T3 DK2883291 T3 DK 2883291T3
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DK
Denmark
Prior art keywords
laser source
wave length
length adjustable
adjustable laser
wave
Prior art date
Application number
DK13745681.0T
Other languages
English (en)
Inventor
Il-Sug Chung
Kresten Yvind
Thor Ansbaek
Ole Hansen
Original Assignee
Univ Danmarks Tekniske
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Publication date
Application filed by Univ Danmarks Tekniske filed Critical Univ Danmarks Tekniske
Application granted granted Critical
Publication of DK2883291T3 publication Critical patent/DK2883291T3/da

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DK13745681.0T 2012-08-08 2013-08-07 Bølgelængdeafstemmelig laserkilde DK2883291T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12179699 2012-08-08
PCT/EP2013/066572 WO2014023777A2 (en) 2012-08-08 2013-08-07 Wavelength sweepable laser source

Publications (1)

Publication Number Publication Date
DK2883291T3 true DK2883291T3 (da) 2022-05-30

Family

ID=48918426

Family Applications (1)

Application Number Title Priority Date Filing Date
DK13745681.0T DK2883291T3 (da) 2012-08-08 2013-08-07 Bølgelængdeafstemmelig laserkilde

Country Status (6)

Country Link
US (1) US9337618B2 (da)
EP (1) EP2883291B8 (da)
JP (1) JP6434406B2 (da)
CN (1) CN104641517B (da)
DK (1) DK2883291T3 (da)
WO (1) WO2014023777A2 (da)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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CN104755908B (zh) * 2012-07-27 2017-12-12 统雷有限公司 敏捷成像系统
JP2015038934A (ja) * 2013-08-19 2015-02-26 キヤノン株式会社 面発光レーザ、およびそれを有する光干渉断層計
JP6512666B2 (ja) * 2013-11-13 2019-05-15 ダンマークス テクニスク ユニバーシテットＤａｎｍａｒｋｓ Ｔｅｋｎｉｓｋｅ Ｕｎｉｖｅｒｓｉｔｅｔ 圧縮光パルスの発生方法
JP6282094B2 (ja) * 2013-11-27 2018-02-21 キヤノン株式会社 面発光レーザ、およびそれを用いた光干渉断層計
WO2016002160A1 (en) * 2014-06-30 2016-01-07 Canon Kabushiki Kaisha Optical-coherence-tomography apparatus and surface-emitting laser
JP6730783B2 (ja) * 2015-02-05 2020-07-29 キヤノン株式会社 波長可変レーザ装置及び光干渉断層計
JP6818410B2 (ja) * 2015-02-05 2021-01-20 キヤノン株式会社 波長可変レーザ装置及び光干渉断層計
JP6608202B2 (ja) * 2015-07-13 2019-11-20 キヤノン株式会社 面発光レーザ、情報取得装置及び撮像装置
JP6608203B2 (ja) * 2015-07-13 2019-11-20 キヤノン株式会社 面発光レーザ、情報取得装置及び撮像装置
JP6679340B2 (ja) * 2016-02-22 2020-04-15 キヤノン株式会社 光干渉断層計
DE102017204478A1 (de) * 2017-03-17 2018-09-20 Jenoptik Laser Gmbh Verfahren zum Betreiben eines oberflächenemittierenden Halbleiterlasers mit veränderlicher Wellenzahl
DE102017205144B4 (de) 2017-03-27 2019-03-14 Jenoptik Laser Gmbh Oberflächenemittierender Halbleiterlaser mit veränderlicher Wellenzahl
US10361539B2 (en) * 2017-04-17 2019-07-23 The Regents Of The University Of California Air-cavity dominant vertical cavity surface emitting lasers
US10831018B2 (en) * 2017-12-08 2020-11-10 Texas Instruments Incorporated Methods and apparatus for increasing efficiency and optical bandwidth of a microelectromechanical system piston-mode spatial light modulator
CN112385099A (zh) * 2018-05-08 2021-02-19 加利福尼亚大学董事会 具有宽波长扫频的气腔占优vcsel
CN110289552A (zh) * 2019-06-26 2019-09-27 北京工业大学 基于亚波长光栅波导的高光束质量垂直腔面激光器阵列与制备方法
CA3107172C (en) * 2020-01-30 2024-02-13 Thorlabs Quantum Electronics, Inc. Tunable laser assembly
CN113258441B (zh) * 2021-06-07 2021-10-01 深圳博升光电科技有限公司 基于hcg的相干光垂直腔面发射激光器及激光器阵列
US12486160B2 (en) 2022-02-28 2025-12-02 Danmarks Tekniske Universitet Grating reflector
EP4562364A1 (en) * 2022-07-29 2025-06-04 Kineolabs, Inc. Compact all free-space line-field swept source oct system
CN119447978A (zh) * 2023-08-01 2025-02-14 芯辰半导体(苏州)有限公司 一种垂直腔面发射激光器及其制备方法
WO2025252901A1 (en) * 2024-06-06 2025-12-11 Ams-Osram International Gmbh Tunable optoelectronic arrangement

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KR101015499B1 (ko) 2004-06-19 2011-02-16 삼성전자주식회사 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부
US20060022213A1 (en) 2004-08-02 2006-02-02 Posamentier Joshua D TO-can heater on flex circuit
US7511870B2 (en) * 2004-10-18 2009-03-31 Georgia Tech Research Corp. Highly tunable low-impedance capacitive micromechanical resonators, oscillators, and processes relating thereto
JP2010141241A (ja) * 2008-12-15 2010-06-24 Seiko Epson Corp 発光装置の製造方法および発光装置
JP5355276B2 (ja) * 2009-07-28 2013-11-27 キヤノン株式会社 面発光レーザ
US20110280269A1 (en) * 2010-05-13 2011-11-17 The Regents Of The University Of California High contrast grating integrated vcsel using ion implantation

Also Published As

Publication number Publication date
CN104641517A (zh) 2015-05-20
US20150171597A1 (en) 2015-06-18
US9337618B2 (en) 2016-05-10
JP2015524622A (ja) 2015-08-24
WO2014023777A2 (en) 2014-02-13
CN104641517B (zh) 2018-01-23
JP6434406B2 (ja) 2018-12-05
EP2883291A2 (en) 2015-06-17
EP2883291B1 (en) 2022-03-02
WO2014023777A3 (en) 2014-04-10
EP2883291B8 (en) 2022-04-06

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