DK2884664T3 - Højtydende igbt-gatedriver - Google Patents
Højtydende igbt-gatedriver Download PDFInfo
- Publication number
- DK2884664T3 DK2884664T3 DK14194497.5T DK14194497T DK2884664T3 DK 2884664 T3 DK2884664 T3 DK 2884664T3 DK 14194497 T DK14194497 T DK 14194497T DK 2884664 T3 DK2884664 T3 DK 2884664T3
- Authority
- DK
- Denmark
- Prior art keywords
- highlights
- igbt
- street
- driver
- street driver
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/101,579 US9444448B2 (en) | 2013-12-10 | 2013-12-10 | High performance IGBT gate drive |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2884664T3 true DK2884664T3 (da) | 2020-06-08 |
Family
ID=51987022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK14194497.5T DK2884664T3 (da) | 2013-12-10 | 2014-11-24 | Højtydende igbt-gatedriver |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9444448B2 (da) |
| EP (1) | EP2884664B1 (da) |
| DK (1) | DK2884664T3 (da) |
| ES (1) | ES2794474T3 (da) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106160423B9 (zh) * | 2015-04-07 | 2019-08-06 | 意法半导体(中国)投资有限公司 | 用于低发射开关调节器的驱动器 |
| JP6531026B2 (ja) * | 2015-10-20 | 2019-06-12 | 株式会社 日立パワーデバイス | 電力変換装置 |
| US9490798B1 (en) * | 2015-10-21 | 2016-11-08 | Agileswitch, Llc | Gate drive control system for SiC and IGBT power devices |
| US10530353B2 (en) * | 2015-10-21 | 2020-01-07 | Microchip Technology Incorporated | Gate drive control system for SiC and IGBT power devices to control desaturation or short circuit faults |
| WO2017070290A1 (en) * | 2015-10-21 | 2017-04-27 | Agileswitch, Llc | Gate drive control system for sic and igbt power devices to control desaturation or short circuit faults |
| EP3179632B1 (en) * | 2015-12-11 | 2022-11-02 | ABB Schweiz AG | Driver circuit |
| US10075114B2 (en) | 2016-03-03 | 2018-09-11 | General Electric Company | System and method for controlling DC link voltage of a power converter |
| US11133796B2 (en) * | 2016-03-11 | 2021-09-28 | Ford Global Technologies, Llc | Dynamic IGBT gate drive to reduce switching loss |
| US9931944B2 (en) * | 2016-03-22 | 2018-04-03 | Ford Global Technologies, Llc | Variable voltage convert system with reduced bypass diode conduction |
| US10148206B2 (en) * | 2016-06-27 | 2018-12-04 | General Electric Company | Controlling operation of a power converter based on grid conditions |
| US9748947B1 (en) | 2016-07-12 | 2017-08-29 | Ge Energy Power Conversion Technology Ltd | IGBT gate drive circuit and method |
| US10340829B2 (en) | 2016-07-25 | 2019-07-02 | General Electric Company | Electrical power circuit and method of operating same |
| JP6669638B2 (ja) * | 2016-11-29 | 2020-03-18 | トヨタ自動車株式会社 | スイッチング回路 |
| US10374591B2 (en) | 2017-01-03 | 2019-08-06 | General Electric Company | Systems and methods for a gate drive circuit |
| DE102017119600B4 (de) * | 2017-08-25 | 2019-06-27 | Infineon Technologies Austria Ag | Verfahren zum Ansteuern eines Transistorbauelements mit nicht-isoliertem Gate, Ansteuerschaltung und elektronische Schaltung |
| US12003230B2 (en) | 2017-12-20 | 2024-06-04 | Mediatek Inc. | Systems for controlling a slew rate of a switch |
| EP3598642B1 (en) * | 2018-07-20 | 2022-04-27 | Infineon Technologies Austria AG | Method for driving a transistor device and electronic circuit |
| US10897250B2 (en) | 2018-11-16 | 2021-01-19 | Transportation Ip Holdings, Llc | Systems and methods for controlling dynamic avalanche in switching devices |
| CN111464160A (zh) * | 2019-12-29 | 2020-07-28 | 西安纬通电子科技有限公司 | 一种新型igbt负压关断电路 |
| CN111277120B (zh) * | 2020-02-19 | 2021-06-18 | 泉州装备制造研究所 | 一种SiC MOSFET自适应驱动电路及自适应驱动方法 |
| US11165422B2 (en) | 2020-04-01 | 2021-11-02 | Delta Electronics, Inc. | Gate driver circuit with reduced power semiconductor conduction loss |
| US11552575B1 (en) | 2021-08-18 | 2023-01-10 | General Electric Company | System and method for operating multi-level power converter using multiple deadtimes |
| US11594953B1 (en) | 2021-10-21 | 2023-02-28 | General Electric Company | System and method for operating multi-level power converter using a multi-state deadtime |
| CN114362729A (zh) * | 2022-01-04 | 2022-04-15 | 北京航空航天大学 | 适应高结温环境的门极驱动电路及其开通方法、关断方法 |
| US12113433B2 (en) | 2022-04-21 | 2024-10-08 | Ge Infrastructure Technology Llc | System and method for detecting IGBT failure in a multi-level converter using gate-emitter voltage sensing |
| CN115085709B (zh) * | 2022-06-24 | 2025-12-02 | 广东汇芯半导体有限公司 | 绝缘栅双极型晶体管电路、相关应用系统和制造方法 |
| EP4597829A1 (en) | 2024-01-31 | 2025-08-06 | ABB Schweiz AG | Electrical motor assembly with a motor cable and a method for identifying a motor cable in an electrical motor assembly |
| EP4597841A1 (en) | 2024-01-31 | 2025-08-06 | ABB Schweiz AG | Gate drive circuit and method for switching a semiconductor switch |
| CN119644079B (zh) * | 2024-11-25 | 2026-01-20 | 华北电力科学研究院有限责任公司 | 一种基于开通过程栅极电压信号的igbt缺陷检测方法及装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208185B1 (en) | 1999-03-25 | 2001-03-27 | Wisconsin Alumni Research Corporation | High performance active gate drive for IGBTs |
| WO2001063764A1 (fr) * | 2000-02-25 | 2001-08-30 | Mitsubishi Denki Kabushiki Kaisha | Module de puissance |
| GB2417149A (en) * | 2004-08-12 | 2006-02-15 | Bombardier Transp Gmbh | Digital adaptive control of IGBT or MOS gate charging current in a converter for a railway traction motor |
| FR2874767B1 (fr) * | 2004-08-27 | 2006-10-20 | Schneider Toshiba Inverter | Dispositif de commande d'un transistor de puissance |
| JP2009071956A (ja) * | 2007-09-12 | 2009-04-02 | Mitsubishi Electric Corp | ゲート駆動回路 |
| US8363440B2 (en) * | 2008-12-17 | 2013-01-29 | Panasonic Corporation | Power conversion circuit having off-voltage control circuit |
| JP5029678B2 (ja) * | 2009-12-07 | 2012-09-19 | 株式会社デンソー | スイッチング素子の駆動装置 |
| JP5130310B2 (ja) | 2010-03-17 | 2013-01-30 | 日立アプライアンス株式会社 | 電圧駆動型半導体素子のゲート駆動回路及び電力変換装置 |
| JP5460519B2 (ja) * | 2010-08-09 | 2014-04-02 | 本田技研工業株式会社 | 半導体素子の駆動装置及び方法 |
| KR20130011812A (ko) | 2011-07-22 | 2013-01-30 | 엘에스산전 주식회사 | Ｉｇｂｔ 구동 방법 |
| US8717069B2 (en) | 2012-04-24 | 2014-05-06 | General Electric Company | Converter switch apparatus and method |
-
2013
- 2013-12-10 US US14/101,579 patent/US9444448B2/en active Active
-
2014
- 2014-11-24 ES ES14194497T patent/ES2794474T3/es active Active
- 2014-11-24 DK DK14194497.5T patent/DK2884664T3/da active
- 2014-11-24 EP EP14194497.5A patent/EP2884664B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ES2794474T3 (es) | 2020-11-18 |
| EP2884664B1 (en) | 2020-03-04 |
| US20150162905A1 (en) | 2015-06-11 |
| EP2884664A1 (en) | 2015-06-17 |
| US9444448B2 (en) | 2016-09-13 |
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