DK3022776T3 - Arkitektonisk system og beslægtede indbyggede nanomembraner til udleder af en lys-til-elektricitet konverteringsenhed helt i silikone til gigantisk fotokonvertering og fremstillingsmetode af samme - Google Patents
Arkitektonisk system og beslægtede indbyggede nanomembraner til udleder af en lys-til-elektricitet konverteringsenhed helt i silikone til gigantisk fotokonvertering og fremstillingsmetode af samme Download PDFInfo
- Publication number
- DK3022776T3 DK3022776T3 DK14806061.9T DK14806061T DK3022776T3 DK 3022776 T3 DK3022776 T3 DK 3022776T3 DK 14806061 T DK14806061 T DK 14806061T DK 3022776 T3 DK3022776 T3 DK 3022776T3
- Authority
- DK
- Denmark
- Prior art keywords
- nanomembranes
- employer
- giant
- silicone
- manufacturing
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1433—Quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361856080P | 2013-07-19 | 2013-07-19 | |
| US201361906468P | 2013-11-20 | 2013-11-20 | |
| PCT/IB2014/002295 WO2015008161A2 (en) | 2013-07-19 | 2014-07-21 | System of architecture and related built-in nanomembranes for the emitter of a light-to-electricity all-silicon converter for the giant photoconversion and the method of its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK3022776T3 true DK3022776T3 (da) | 2020-09-14 |
Family
ID=52003004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK14806061.9T DK3022776T3 (da) | 2013-07-19 | 2014-07-21 | Arkitektonisk system og beslægtede indbyggede nanomembraner til udleder af en lys-til-elektricitet konverteringsenhed helt i silikone til gigantisk fotokonvertering og fremstillingsmetode af samme |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10020408B2 (da) |
| EP (1) | EP3022776B1 (da) |
| CN (1) | CN105393364B (da) |
| DK (1) | DK3022776T3 (da) |
| FR (1) | FR3008828A1 (da) |
| PL (1) | PL3022776T3 (da) |
| WO (1) | WO2015008161A2 (da) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105229799B (zh) * | 2013-05-14 | 2019-06-14 | 赛腾高新技术公司 | 在硅材料内形成的纳米结构单元及在其中完成它们的制造方法 |
| FR3067168A1 (fr) * | 2017-06-01 | 2018-12-07 | Segton Advanced Technology | Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2722612B1 (fr) | 1994-07-13 | 1997-01-03 | Centre Nat Rech Scient | Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif |
| WO2010089624A1 (en) * | 2009-02-06 | 2010-08-12 | Kuznicki Zbigniew T | Methods for producing photovoltaic material and device able to exploit high energy photons |
| PL2689473T3 (pl) | 2011-03-25 | 2019-10-31 | Segton Advanced Tech | Przetwornik fotoelektryczny o ulepszonej strukturze emitera opartej ma komponentach krzemowych oraz sposób wytwarzania przetwornika fotoelektrycznego |
| JP5745958B2 (ja) * | 2011-07-07 | 2015-07-08 | トヨタ自動車株式会社 | 光電変換素子 |
| WO2014130868A1 (en) * | 2013-02-21 | 2014-08-28 | The Governing Council Of The University Of Toronto | Photovoltaic devices with plasmonic nanoparticles |
| CN105229799B (zh) * | 2013-05-14 | 2019-06-14 | 赛腾高新技术公司 | 在硅材料内形成的纳米结构单元及在其中完成它们的制造方法 |
-
2014
- 2014-07-21 DK DK14806061.9T patent/DK3022776T3/da active
- 2014-07-21 FR FR1401647A patent/FR3008828A1/fr not_active Withdrawn
- 2014-07-21 PL PL14806061T patent/PL3022776T3/pl unknown
- 2014-07-21 WO PCT/IB2014/002295 patent/WO2015008161A2/en not_active Ceased
- 2014-07-21 CN CN201480040979.3A patent/CN105393364B/zh not_active Expired - Fee Related
- 2014-07-21 EP EP14806061.9A patent/EP3022776B1/en active Active
- 2014-07-21 US US14/904,118 patent/US10020408B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015008161A4 (en) | 2015-08-06 |
| FR3008828A1 (fr) | 2015-01-23 |
| WO2015008161A3 (en) | 2015-04-16 |
| EP3022776B1 (en) | 2020-07-08 |
| CN105393364A (zh) | 2016-03-09 |
| PL3022776T3 (pl) | 2020-11-16 |
| WO2015008161A2 (en) | 2015-01-22 |
| EP3022776A2 (en) | 2016-05-25 |
| US10020408B2 (en) | 2018-07-10 |
| US20160155869A1 (en) | 2016-06-02 |
| CN105393364B (zh) | 2020-01-03 |
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