DK3152153T3 - Apparat til avanceret behandling - Google Patents

Apparat til avanceret behandling Download PDF

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Publication number
DK3152153T3
DK3152153T3 DK14893855.8T DK14893855T DK3152153T3 DK 3152153 T3 DK3152153 T3 DK 3152153T3 DK 14893855 T DK14893855 T DK 14893855T DK 3152153 T3 DK3152153 T3 DK 3152153T3
Authority
DK
Denmark
Prior art keywords
advanced treatment
advanced
treatment
Prior art date
Application number
DK14893855.8T
Other languages
English (en)
Inventor
Andrew Dzurak
Chih-Hwan Henry Yang
Menno Veldhorst
Original Assignee
Newsouth Innovations Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54765855&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK3152153(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Newsouth Innovations Pty Ltd filed Critical Newsouth Innovations Pty Ltd
Application granted granted Critical
Publication of DK3152153T3 publication Critical patent/DK3152153T3/da

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/195—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • H10D48/3835—Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Hall/Mr Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DK14893855.8T 2014-06-06 2014-06-06 Apparat til avanceret behandling DK3152153T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/AU2014/000596 WO2015184484A1 (en) 2014-06-06 2014-06-06 Advanced processing apparatus

Publications (1)

Publication Number Publication Date
DK3152153T3 true DK3152153T3 (da) 2022-04-11

Family

ID=54765855

Family Applications (1)

Application Number Title Priority Date Filing Date
DK14893855.8T DK3152153T3 (da) 2014-06-06 2014-06-06 Apparat til avanceret behandling

Country Status (7)

Country Link
US (1) US9886668B2 (da)
EP (1) EP3152153B1 (da)
CN (1) CN106414310B (da)
AU (1) AU2014396790B2 (da)
DK (1) DK3152153T3 (da)
ES (1) ES2910453T3 (da)
WO (1) WO2015184484A1 (da)

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EP3469636B1 (en) 2016-06-08 2024-02-07 SOCPRA - Sciences et Génie s.e.c. Electronic circuit for control or coupling of single charges or spins and methods therefor
EP3497725A4 (en) * 2016-08-10 2020-04-15 Intel Corporation QUANTUM POINT GROUP DEVICES
EP3507837A4 (en) * 2016-08-30 2020-05-06 Intel Corporation QUANTUM POINT DEVICES
US11101352B2 (en) 2016-09-24 2021-08-24 Intel Corporation Quantum dot array devices with shared gates
US20190164959A1 (en) * 2016-09-29 2019-05-30 Intel Corporation On-chip control logic for qubits
WO2018084878A1 (en) * 2016-11-03 2018-05-11 Intel Corporation Quantum dot devices
CN107170813B (zh) * 2017-06-26 2023-08-29 中国科学技术大学 空穴型半导体电控量子点器件，其制备及使用方法
CN108428627B (zh) * 2018-03-28 2021-03-09 中国科学技术大学 一种电控GaAs/AlGaAs半导体量子点势阱的方法
FR3081155B1 (fr) * 2018-05-17 2021-10-22 Commissariat Energie Atomique Procede de fabrication d'un composant electronique a multiples ilots quantiques
FR3081154B1 (fr) 2018-05-17 2023-08-04 Commissariat Energie Atomique Procede de fabrication d'un composant electronique a multiples ilots quantiques
US11620561B2 (en) 2018-05-30 2023-04-04 Mark A. Novotny Method and system for a quantum oracle to obtain the number of quantum ground states
US10868119B2 (en) 2018-06-20 2020-12-15 equal1.labs Inc. Semiconductor quantum structures using preferential tunneling through thin insulator layers
US10861940B2 (en) 2018-06-20 2020-12-08 equal1.labs Inc. Semiconductor process for quantum structures with staircase active well incorporating shared gate control
US10903413B2 (en) 2018-06-20 2021-01-26 Equal!.Labs Inc. Semiconductor process optimized for quantum structures
US11450760B2 (en) 2018-06-20 2022-09-20 equal1.labs Inc. Quantum structures using aperture channel tunneling through depletion region
US10845496B2 (en) 2018-06-20 2020-11-24 equal1.labs Inc. Multistage semiconductor quantum detector circuit incorporating anticorrelation
US10854738B2 (en) 2018-06-20 2020-12-01 equal1.labs Inc. Semiconductor process for quantum structures with staircase active well
US10850978B2 (en) 2018-06-20 2020-12-01 equal1.labs Inc. Quantum shift register structures
US11423322B2 (en) 2018-06-20 2022-08-23 equal1.labs Inc. Integrated quantum computer incorporating quantum core and associated classical control circuitry
US10873019B2 (en) 2018-06-20 2020-12-22 equal1.labs Inc. Topological programmable scalable quantum computing machine utilizing chord line quasi unidimensional aperature tunneling semiconductor structures
US11610985B2 (en) * 2018-07-20 2023-03-21 Silicon Quantum Computing Pty Ltd. Quantum processing system
WO2020037373A1 (en) * 2018-08-23 2020-02-27 The University Of Melbourne "quantum computer arrays"
US11444184B1 (en) * 2018-08-27 2022-09-13 U.S. Government As Represented By The Director, National Security Agency System for induced quantum dots for material characterization, qubits, and quantum computers
AU2019377959B2 (en) * 2018-11-12 2025-05-08 Diraq Pty Ltd A signal combiner
WO2020232065A2 (en) * 2019-05-13 2020-11-19 The Johns Hopkins University Qubit devices comprising one or more polycrystalline or single crystalline spin-triplet superconductors
GB201906936D0 (en) * 2019-05-16 2019-07-03 Quantum Motion Tech Limited Processor element for quantum information processor
EP3772756A1 (en) 2019-08-07 2021-02-10 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Semiconductor element, method of reading out a quantum dot device and system
CN115298674A (zh) * 2019-11-15 2022-11-04 新南创新有限公司 量子计算系统的全局控制
US12453138B2 (en) * 2020-03-13 2025-10-21 Quantum Motion Technologies Limited Quantum dot device
US11672187B2 (en) 2020-03-25 2023-06-06 International Business Machines Corporation Quantum tuning via permanent magnetic flux elements
CN111753991B (zh) * 2020-06-22 2024-04-02 中国科学技术大学 自旋量子比特的操控与读取装置及方法
CN116209637A (zh) * 2020-08-07 2023-06-02 量子运动科技有限公司 由金属结构限定的硅量子装置结构
US12395162B2 (en) 2020-11-12 2025-08-19 equal1.labs Inc. System and method of quantum stochastic rounding using silicon based quantum dot arrays
WO2022161366A1 (zh) * 2021-01-29 2022-08-04 合肥本源量子计算科技有限责任公司 半导体量子点器件及制备方法、信号读取方法和操控方法
CN114823880B (zh) * 2021-01-29 2026-02-24 本源量子计算科技（合肥）股份有限公司 半导体量子点器件及制备方法、信号读取方法和操控方法
EP4071825A1 (en) 2021-04-09 2022-10-12 Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno Accumulation gate for quantum device
US11923418B2 (en) 2021-04-21 2024-03-05 Atomera Incorporated Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
TWI806553B (zh) 2021-04-21 2023-06-21 美商安托梅拉公司 包含超晶格及富集矽２８磊晶層之半導體元件及相關方法
US11810784B2 (en) 2021-04-21 2023-11-07 Atomera Incorporated Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
FR3126063B1 (fr) * 2021-08-04 2024-03-01 Commissariat Energie Atomique Dispositif pour le stockage, le contrôle et la manipulation de l’information quantique (qubits) sur semi-conducteur
CN113792880B (zh) * 2021-09-17 2022-04-19 北京百度网讯科技有限公司 基于脉冲的量子门实现方法及装置、电子设备和介质
WO2023047956A1 (ja) * 2021-09-22 2023-03-30 国立研究開発法人科学技術振興機構 電子トラップ装置、量子コンピュータ、フリップチップ構造の製造方法、電子トラップ方法
US20260123299A1 (en) 2024-01-17 2026-04-30 Atomera Incorporated Method for making semiconductor device including an enriched silicon 28 epitaxial layer
EP4618158A1 (en) * 2024-03-11 2025-09-17 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO A quantum electronic device with a charge detector for determining a property of a qubit, and a method for determining said property

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JP3974429B2 (ja) * 2002-02-28 2007-09-12 株式会社東芝 乱数発生素子
WO2005124674A1 (en) * 2004-06-15 2005-12-29 National Research Council Of Canada Voltage-controlled computing element for quantum computer
US7208753B2 (en) * 2005-03-17 2007-04-24 The United States Of America As Represented By The Secretary Of The Navy Enhancement mode single electron transistor
EP2075745A1 (en) * 2007-12-28 2009-07-01 Hitachi Ltd. Quantum information processing device
JP5306377B2 (ja) 2008-02-11 2013-10-02 クコー ピーティーワイ リミテッド 電子又はホールスピンの制御及び読み取り
EP2309562B1 (en) * 2009-10-12 2012-12-05 Hitachi Ltd. Charge carrier device
US8829492B2 (en) 2010-11-05 2014-09-09 Chungbuk National University Industry-Academic Cooperation Foundation Multiple quantum dot device and a production method for the device
EP2560133A1 (en) * 2011-08-17 2013-02-20 Hitachi, Ltd. Quantum information processing
US9691033B2 (en) * 2013-03-20 2017-06-27 Newsouth Innovations Pty Limited Quantum computing with acceptor-based qubits

Also Published As

Publication number Publication date
US9886668B2 (en) 2018-02-06
EP3152153A4 (en) 2018-02-28
ES2910453T3 (es) 2022-05-12
US20170147939A1 (en) 2017-05-25
AU2014396790A1 (en) 2017-01-12
EP3152153A1 (en) 2017-04-12
CN106414310B (zh) 2020-08-07
AU2014396790B2 (en) 2019-05-16
CN106414310A (zh) 2017-02-15
EP3152153B1 (en) 2022-01-19
WO2015184484A1 (en) 2015-12-10

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