DK3483310T3 - Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium - Google Patents
Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium Download PDFInfo
- Publication number
- DK3483310T3 DK3483310T3 DK18205387.6T DK18205387T DK3483310T3 DK 3483310 T3 DK3483310 T3 DK 3483310T3 DK 18205387 T DK18205387 T DK 18205387T DK 3483310 T3 DK3483310 T3 DK 3483310T3
- Authority
- DK
- Denmark
- Prior art keywords
- monocrystallinic
- silicium
- making
- monocrystallinic silicium
- making monocrystallinic
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017218314A JP6863240B2 (ja) | 2017-11-13 | 2017-11-13 | シリコン単結晶の製造装置および製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK3483310T3 true DK3483310T3 (da) | 2020-07-20 |
Family
ID=64270695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK18205387.6T DK3483310T3 (da) | 2017-11-13 | 2018-11-09 | Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3483310B1 (da) |
| JP (1) | JP6863240B2 (da) |
| CN (1) | CN109778313B (da) |
| DK (1) | DK3483310T3 (da) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7255468B2 (ja) * | 2019-12-06 | 2023-04-11 | 株式会社Sumco | 誘導加熱コイル及びこれを用いた単結晶製造装置 |
| JP7447784B2 (ja) * | 2020-12-25 | 2024-03-12 | 株式会社Sumco | 誘導加熱コイル及びこれを用いた単結晶製造装置 |
| JP7637544B2 (ja) * | 2021-03-25 | 2025-02-28 | Tdk株式会社 | 結晶製造方法、結晶製造装置、及び単結晶 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339057A (en) * | 1976-09-22 | 1978-04-10 | Toshiba Corp | Production of semiconductor single crystal |
| JP4521621B2 (ja) * | 1999-05-24 | 2010-08-11 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶製造方法 |
| DE10216609B4 (de) * | 2002-04-15 | 2005-04-07 | Siltronic Ag | Verfahren zur Herstellung der Halbleiterscheibe |
| CN1254565C (zh) * | 2002-12-30 | 2006-05-03 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
| CN202072793U (zh) * | 2010-12-23 | 2011-12-14 | 北京有色金属研究总院 | 一种用于区熔气相掺杂的高频加热线圈 |
| JP2013177254A (ja) | 2012-02-28 | 2013-09-09 | Shin Etsu Handotai Co Ltd | Ｆｚ法による単結晶製造装置の誘導加熱コイルの洗浄方法 |
| CN203741451U (zh) * | 2014-01-27 | 2014-07-30 | 浙江晶盛机电股份有限公司 | 一种用于区熔炉的气体控制系统 |
| JP6365218B2 (ja) * | 2014-10-17 | 2018-08-01 | 株式会社Sumco | 単結晶の製造方法及び製造装置 |
| CN105177698A (zh) * | 2015-10-19 | 2015-12-23 | 天津市环欧半导体材料技术有限公司 | 一种区熔气掺单晶用吹气线圈 |
| JP2017141130A (ja) * | 2016-02-09 | 2017-08-17 | 信越半導体株式会社 | 半導体単結晶の製造方法及び半導体単結晶の製造装置 |
-
2017
- 2017-11-13 JP JP2017218314A patent/JP6863240B2/ja active Active
-
2018
- 2018-11-09 DK DK18205387.6T patent/DK3483310T3/da active
- 2018-11-09 EP EP18205387.6A patent/EP3483310B1/en active Active
- 2018-11-13 CN CN201811346532.5A patent/CN109778313B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019089668A (ja) | 2019-06-13 |
| JP6863240B2 (ja) | 2021-04-21 |
| CN109778313A (zh) | 2019-05-21 |
| EP3483310B1 (en) | 2020-06-10 |
| CN109778313B (zh) | 2021-04-02 |
| EP3483310A1 (en) | 2019-05-15 |
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