DK381276A - Fremgangsmade til fremstilling af halvlederenkrystaller med indstillelig koncentration af doteringsstoffer - Google Patents

Fremgangsmade til fremstilling af halvlederenkrystaller med indstillelig koncentration af doteringsstoffer

Info

Publication number
DK381276A
DK381276A DK381276A DK381276A DK381276A DK 381276 A DK381276 A DK 381276A DK 381276 A DK381276 A DK 381276A DK 381276 A DK381276 A DK 381276A DK 381276 A DK381276 A DK 381276A
Authority
DK
Denmark
Prior art keywords
dotors
procedure
preparation
semiconductor crystals
adjustable concentration
Prior art date
Application number
DK381276A
Other languages
Danish (da)
English (en)
Inventor
A Ellbrunner
F Georg
G Priewasser
H Stock
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of DK381276A publication Critical patent/DK381276A/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK381276A 1975-09-25 1976-08-24 Fremgangsmade til fremstilling af halvlederenkrystaller med indstillelig koncentration af doteringsstoffer DK381276A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752542867 DE2542867A1 (de) 1975-09-25 1975-09-25 Verfahren zur herstellung von halbleitereinkristallen mit einstellbarer dotierstoffkonzentration

Publications (1)

Publication Number Publication Date
DK381276A true DK381276A (da) 1977-03-26

Family

ID=5957446

Family Applications (1)

Application Number Title Priority Date Filing Date
DK381276A DK381276A (da) 1975-09-25 1976-08-24 Fremgangsmade til fremstilling af halvlederenkrystaller med indstillelig koncentration af doteringsstoffer

Country Status (7)

Country Link
JP (1) JPS5240966A (fr)
BE (1) BE846557A (fr)
DE (1) DE2542867A1 (fr)
DK (1) DK381276A (fr)
FR (1) FR2325425A1 (fr)
IT (1) IT1066181B (fr)
NL (1) NL7609300A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (ja) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Ｃｚ単結晶のド−プ方法およびその装置
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
DE19936838A1 (de) * 1999-08-05 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines mit Stickstoff dotierten Einkristalls
WO2001086033A1 (fr) * 2000-05-10 2001-11-15 Memc Electronic Materials, Inc. Procede et dispositif permettant d'introduire un dopant a base d'arsenic dans un procede de tirage de cristal de silicium
RU2202656C2 (ru) * 2001-06-15 2003-04-20 Губенко Анатолий Яковлевич Способ получения кремния, легированного сурьмой
US7132091B2 (en) 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
FR3119158B1 (fr) 2021-01-28 2025-01-03 Latecoere Porte d’aéronef équipée d’un système de réglage en position et procédé d’installation d’une telle porte.

Also Published As

Publication number Publication date
FR2325425A1 (fr) 1977-04-22
BE846557A (fr) 1977-03-24
NL7609300A (nl) 1977-03-29
IT1066181B (it) 1985-03-04
DE2542867A1 (de) 1977-03-31
JPS5240966A (en) 1977-03-30

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