EP0000123A1 - Procédé de dépÔt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses. - Google Patents

Procédé de dépÔt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses. Download PDF

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Publication number
EP0000123A1
EP0000123A1 EP78100110A EP78100110A EP0000123A1 EP 0000123 A1 EP0000123 A1 EP 0000123A1 EP 78100110 A EP78100110 A EP 78100110A EP 78100110 A EP78100110 A EP 78100110A EP 0000123 A1 EP0000123 A1 EP 0000123A1
Authority
EP
European Patent Office
Prior art keywords
melt
substrate
deposited
melts
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP78100110A
Other languages
German (de)
English (en)
Other versions
EP0000123B1 (fr
Inventor
Claus Weyrich
Werner Hosp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0000123A1 publication Critical patent/EP0000123A1/fr
Application granted granted Critical
Publication of EP0000123B1 publication Critical patent/EP0000123B1/fr
Expired legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
    • B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
    • B09B1/00—Dumping solid waste
    • B09B1/008—Subterranean disposal, e.g. in boreholes or subsurface fractures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Definitions

  • the invention relates to a method for depositing single-crystalline layers according to the liquid-phase shift epitaxy, as specified in the preamble of claim 1.
  • a melt containing the material to be deposited is pushed onto the surface of a substrate with the aid of a slide and then by slightly cooling the: melt material deposited single-crystal on the substrate surface. As soon as the intended layer thickness of the single-crystalline layer is reached with the deposition, the remaining melt is pushed off the substrate surface or the grown epitaxial layer with the aid of the slide.
  • Such a sliding epitaxy method and a device for carrying out this method are described, for example, in US Pat. No. 3,753,801.
  • Layer sequences are usually produced using sliding devices in which the substrate disks are located in suitably designed depressions in a graphite “boat” and in which a movable slide is present which has several Has chambers for different melts of different compositions.
  • the substrate disks are arranged one behind the other or concentrically at the same distance, and the chambers of the slide are also arranged one behind the other or concentrically with the corresponding distance.
  • the melts are pushed one after the other over the respective substrate crystal, a single-crystal layer growing each time by cooling the melt by a certain amount of temperature.
  • the thickness of the grown layer is determined by the size of the temperature drop in the melt and by the thickness of the melt above the sub strat and, unless the amount of dissolved substance corresponding to the lowering of temperature is completely deposited on the substrate, also determined by the cooling rate of the melt. If very thin layers are to be deposited on a substrate, then melts must be used for the deposition, which are saturated with the material of the substrate, so that when the melt is pushed on, there is no uncontrolled dissolution of the substrate crystal on its surface and, as a result, an uncontrolled one Layer growth occurs.
  • the object of the invention is a method for separation to indicate the single-crystalline layers after the liquid-phase shift epitaxy, with which it is possible to provide a plurality of substrate wafers simultaneously with a multilayer structure without the need for such pre-substrates and which allows the number of chambers of the slide intended for the melt to be pushed on Reduce.
  • the advantage of the method according to the invention is that the individual layers are deposited on the respective substrate wafers from the same melt, and that the temperature is reduced by the same amount for the individual melts. To control the thickness of the layer deposited in each case, the thickness of the melt located above the substrate wafer is varied accordingly.
  • the respective melt from which the layer in question is to be deposited in single crystal remains on the substrate crystal until it is in equilibrium with it.
  • the substrate wafers to be coated are arranged one behind the other in the apparatus used to carry out the method according to the invention at the same distance as the distance between the chambers of the slide provided for the melts.
  • the substrate disks or the chambers provided for the melts can be linear or concentrated trical circles.
  • a first melt is pushed onto a first substrate.
  • the first melt can optionally have been brought into solution equilibrium via a pre-substrate.
  • the arrangement is cooled by a certain temperature interval ⁇ t, which is, for example, approximately 1 ° C.
  • Material that is dissolved in the melt is deposited epitaxially on the substrate surface.
  • the melt is left on the substrate until the melt has reached the solution equilibrium prevailing at this new temperature, ie until the melt is exhausted for the deposition. It can be assumed that the growth out of the melt is determined by the diffusion of the substance dissolved in the melt, for example in the deposition of GaAs by the diffusion of the As in the Ga melt.
  • the minimum residence time of the melt on the substrate after the cooling is completed by the equation where W max is the greatest thickness of the melt used for deposition and D is the diffusion coefficient of the dissolved material in the melt.
  • W max is the greatest thickness of the melt used for deposition
  • D is the diffusion coefficient of the dissolved material in the melt.
  • ⁇ . ⁇ t «t min is fulfilled, where ⁇ is the cooling rate, At is the cooling interval. If the equation ⁇ ⁇ ⁇ > t min applies instead of this last equation, the minimum dwell time can be kept correspondingly lower after cooling. If the Abkühlgeschwin- held g di ness of the melt sufficiently small, could a holding time of the melt on the substrate without simultaneously lowering the temperature is even completely eliminated.
  • the thickness of the each deposited layer is proportional to the thickness of the melt located above the respective substrate wafer.
  • the thickness of the melt must be approximately 1 mm in order to grow a 1 / um thick GaAs layer, taking the hold time according to the equation with D approximately equal to 5.10 -5 cm sec -1 . must be about 200 sec.
  • the first melt is then pushed onto the second substrate by sliding the slide; at the same time the second melt is then pushed onto the first substrate for the deposition of the second layer.
  • the arrangement is then cooled again by the same amount of temperature, that is to say 1 ° C. in the example given.
  • the first melt is then pushed onto the third substrate wafer, the second melt onto the second substrate wafer, and the third melt onto the first substrate wafer, and the entire arrangement is then cooled again by 1 ° C.
  • FIG. 1 schematically shows the process for producing a 4-layer structure on GaAs substrates.
  • the substrate disks 11, 12, 13, 14 and 15 are located in a "boat" 1, which consists, for example, of graphite.
  • a slide 2 is placed, which contains four chambers in which the melts 21, 22, 23 and 24 are included.
  • the thickness of the respective melts over the substrates is adjusted by the amount of the melt filled.
  • Stamps 3 prevent the melt from contracting into a drop due to surface tension at small melt thicknesses.
  • the slide is first in one position brought, in which the melt 21 is located above the substrate 11. A layer 111 is deposited on the substrate 11. The slide is then brought into the next position so that the melt 21 is above the substrate 12.
  • the temperature of the arrangement is now again lowered by an amount of approximately 1 ° C.
  • a layer 121 is deposited on the substrate 12 in a single crystal, and a layer 112 is deposited on the substrate 11 from the melt 22 now located above the substrate 11.
  • the slide 2 ′ is again pushed in the direction of the arrow so that the melt 21 is now above the substrate 13. This state is shown in Fig.1.
  • the first epitaxial layer then deposits on the substrate 13, the second epitaxial layer on the substrate 12 and the third epitaxial layer on the substrate 11.
  • the slide 2 is again moved by one position so that the melt 21 is now above the substrate 14, the melt 24 is above the substrate 11.
  • the process continues until all substrates are covered with a 4-layer structure.
  • Fig. 2 shows the temperature profile of the entire arrangement.
  • the initial temperature t A is, for example, 800 ° C. According to the existing number of substrates and the number of deposited layers takes place a gradual decrease in temperature by an amount At, for example, 1 0 C.
  • the final temperature T E is a method in which ten substrate wafers with a 4-layer structure are coated, e.g. 15 ° lower than the initial temperature.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP78100110A 1977-07-05 1978-06-07 Procédé de dépôt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses. Expired EP0000123B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2730358 1977-07-05
DE2730358A DE2730358C3 (de) 1977-07-05 1977-07-05 Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie

Publications (2)

Publication Number Publication Date
EP0000123A1 true EP0000123A1 (fr) 1979-01-10
EP0000123B1 EP0000123B1 (fr) 1981-02-25

Family

ID=6013202

Family Applications (1)

Application Number Title Priority Date Filing Date
EP78100110A Expired EP0000123B1 (fr) 1977-07-05 1978-06-07 Procédé de dépôt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses.

Country Status (6)

Country Link
US (1) US4149914A (fr)
EP (1) EP0000123B1 (fr)
JP (1) JPS5414669A (fr)
CA (1) CA1116312A (fr)
DE (1) DE2730358C3 (fr)
IT (1) IT1096839B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
DE3036643C2 (de) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Flüssigphasen-Epitaxie
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4427464A (en) 1981-12-31 1984-01-24 Bell Telephone Laboratories, Incorporated Liquid phase epitaxy
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
JPH07115987B2 (ja) * 1986-09-26 1995-12-13 徳三 助川 超構造および多層膜の製作法
TW460604B (en) 1998-10-13 2001-10-21 Winbond Electronics Corp A one-sided and mass production method of liquid phase deposition
CN102995115B (zh) * 2012-12-27 2015-07-29 中国电子科技集团公司第十一研究所 一种用于液相外延生长的石墨舟及液相外延生长方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28140E (en) * 1971-11-29 1974-08-27 Bergh ctal
US3899137A (en) * 1974-12-17 1975-08-12 Martin Shenker Cleaning device for photo-slides
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices
JPS5342230B2 (fr) * 1972-10-19 1978-11-09
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28140E (en) * 1971-11-29 1974-08-27 Bergh ctal
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
US3899137A (en) * 1974-12-17 1975-08-12 Martin Shenker Cleaning device for photo-slides

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, vol. 19, nr. 4, Punkt 2, 1976, S.G. ZHILENIS et al " Cassette for batch growth of layers by the liquid-epitaxy method", Seiten 1221 bis 1222 *

Also Published As

Publication number Publication date
DE2730358A1 (de) 1979-01-11
JPS6235260B2 (fr) 1987-07-31
DE2730358C3 (de) 1982-03-18
DE2730358B2 (de) 1981-05-27
IT7825180A0 (it) 1978-06-30
IT1096839B (it) 1985-08-26
US4149914A (en) 1979-04-17
EP0000123B1 (fr) 1981-02-25
JPS5414669A (en) 1979-02-03
CA1116312A (fr) 1982-01-12

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