EP0032230A2 - Transducteur magnétique intégré et procédé pour sa fabrication - Google Patents

Transducteur magnétique intégré et procédé pour sa fabrication Download PDF

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Publication number
EP0032230A2
EP0032230A2 EP80108128A EP80108128A EP0032230A2 EP 0032230 A2 EP0032230 A2 EP 0032230A2 EP 80108128 A EP80108128 A EP 80108128A EP 80108128 A EP80108128 A EP 80108128A EP 0032230 A2 EP0032230 A2 EP 0032230A2
Authority
EP
European Patent Office
Prior art keywords
layer
groove
transducer
silicon substrate
inductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP80108128A
Other languages
German (de)
English (en)
Other versions
EP0032230A3 (fr
Inventor
Wolfgang Kayser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0032230A2 publication Critical patent/EP0032230A2/fr
Publication of EP0032230A3 publication Critical patent/EP0032230A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/1871—Shaping or contouring of the transducing or guiding surface
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3176—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps

Definitions

  • the invention relates to magnetic transducers for recording and producing high frequency electrical signals on a magnetic recording medium; and more specifically it relates to a thin-film magnetic transducer integrated on a silicon substrate.
  • the U.S. patent 4,044,394 to Hanazano et al discloses a narrow track, multi-turn magnetic transducer which can be formed by integrated circuit fabrication technique such as evaporation, chemical etching, etc.
  • the magnetic transducer with a coil structure of four or more turns comprises a coil divided into sections with a plurality of sets of conductor films insulated from one another.
  • the U.S. patent 3,859,664 to Chynoweth et al discloses a batch fabricated transducer structure of a so called "turn in gap" head. This means a single-turn structure of the magnetic transducer.
  • thin-film magnetic transducers can obviously be fabricated with extremely small dimensions. They contain al3 the functional elements of conventional magnetic recording transducers, a resolving structure and a driving structure.
  • the elements of thin-film transducers also can be described in conventional terms, i.e, they have pole pieces, a yoke or a gap, etc, even if these elements will not appear in the physical form as with conventional transducers.
  • the thin film counterparts are fabricated by film deposition and photoetching processes which are more closely related to integrated circuit fabrication. As a further consequence, any other dimensions such as gap length, track width, track spacing and gap depth can be achieved with high accuracy.
  • This thin-film fabrication technique makes the fabrication of multi-channel magnetic recording transducers no more difficult than that of single channel transducers.
  • the horizontal transducer As described in an article "Thin-Film Inductive Recording Heads" published in "AIP Conference Proceedings", 1974, pages 534 to 540, two basic structures of thin-film inductive recording transducers have become known: the horizontal transducer” and the “vertical transducer.” The distinction is derived from that basically thin-film transducers can be deposited either vertically against one side of a substrate or horizontally on it.
  • the horizontal type of a single turn inductive transducer requires the formation of a short gap by electron beam exposure or machining. This manufacturing complication and other disadvantageous characteristics in reference to a vertical transducer have limited the attention to the horizontal inductive transducer.
  • multi-turn transducers commonly require a multiplicity of deposition steps to build up the different layers deposited through appropriate masks. This particular design limits the realizable transducer dimensions and center-to-center spacings.
  • single turn devices can lead to smaller transducers on tighter center-to-center spacings. Because of these disadvantages of horizontal magnetic transducers and a complication of multi-turn transducers, most work has concentrated on vertical single turn transducer type.
  • a single turn magnetic transducer even if the efficiency is high, the constraint of having the "winding" tc be the gap spacer will result in extremely high write current densities. For this reason above all, single turn transducers have a more serious thermal problem than multi-turn transducers or even more than conventional transducers.
  • Another disadvantage of the known vertical single turn transducer is a head structure which is perpendicular to the recording medium. Since the surface of the pole pieces has to be lapped to achieve a very plane and smooth surface the head chip has to be imbedded between guiding blocks prior to lapping.
  • an object of the invention to provide an improved integrated magnetic head for recording and reproducing high frequency electrical signals on a magnetic recording medium.
  • Another.object of the invention is to provide an integrated magnetic transducer with a minimum physical size which is suitable to meet the requirements of high density magnetic recording.
  • Still another object of the invention is to provide an integrated magnetic transducer with accurate physical dimensions and a method of manufacturing the same with an extremely high production repeatability.
  • a further object of the invention is to provide an improved integrated magnetic transducer which is to be constructed in a pure planar fabrication technique.
  • Still another object of the invention is to provide an integrated magnetic transducer with a structure which is efficiently adapted to carry heat from the conductor to the substrate to meet the thermal requirements of thin-film magnetic transducers.
  • the new and useful magnetic transducer has a silicon substrate as a base with a groove extending through the silicon substrate.
  • the groove preferably has declining sides which form a V-shaped cutting in a cross sectional view and two ends.
  • a magnetically inductive material is disposed over the sides of the groove to form pole pieces of a transducer.
  • the remaining space in the groove is filled with an electrically conductive layer which is to be understood as a single turn of the magnetic transducer.
  • On opposite ends of the groove contact leads are disposed on-this layer to supply electrical current to the conductive layer.
  • a second layer of magnetically inductive material is disposed over the electrically conductive layer in the center between the contact leads.
  • This second magnetically inductive layer forming a yoke of the transducer, is contacted to the first magnetically conductive layer to complete the magnetic circuit.
  • a manufacturing method of the transducer which is based on an anisotropic etching process to form the groove in the silicon substrate. This etching process is followed by a series of deposition steps to build up the transducer structure.
  • FIG. 1 illustrates in a three-dimensional view, a basic structure of a thin-film magnetic transducer integrated on a silicon substrate 1 which is arranged atop of a recording medium 2.
  • the recording medium 2 may be a magnetic disk with a carrier base 21 and a recording layer 22 on the upper surface of the carrier. In operation the recording medium 2 is moved relatively in reference to the magnetic transducer chip as indicated by an arrow.
  • the silicon substrate 1 carrying the magnetic transducer is provided with a V-shaped groove. That groove has two sides and two ends extending through the silicon substrate. Disposed on the sides of the groove and the upper surface of the silicon substrate 1 is a first insulating layer 11 of silicon dioxide. On the sides of the V-shaped groove atop this first insulating layer a first layer of magnetically inductive material 12 is deposited. This layer is buried under a second insulating layer 11', made of silicon dioxide. The remaining space in the V-shaped groove is filled with an electrical conductive layer 13 which is covered by a third insulating layer 14 in a center area of the V-shaped groove.
  • the first layer of magnetic inductive material 12 is extending from the sides of the V-shaped groove on the upper surface of the silicon substrate 1 to form contact pads 112 which are covered by respective end portions 115 of the second layer of magnetic inductive material 15.
  • contact leads 16 are deposited on the surface of the silicon substrate 1.
  • the contact leads 16 are conductively connected to the first electrically conductive layer 13 and form electrical connections for the current supply of the magnetic transducer.
  • This structure is the basic concept of the thin-film magnetic transducer.
  • both parts of the first layer of magnetic inductive material 12 are the pole pieces of the transducer.
  • the design of the V-shaped groove is such that these pole pieces are spaced apart from each other at the apex of the V-shaped groove to form a transducer gap which is filled by the first electrically conductive layer 13 and the second insulating layer 11'.
  • the electrically conductive layer 13 is a single turn of the "wiring" of the magnetic transducer.
  • the second layer of magnetically inductive material 15 is connected to the first layer of magnetically inductive material 12 at respective connecting pads 112, it completes the magnetic circuit; it is the yoke of the magnetic transducer and preferably it is made of different material with different dimensions in reference to the first layer of magnetically inductive material to achieve best results.
  • Figure 2 illustrates a cross sectional view of the magnetic transducer structure of Fig. 1 along a line II-II.
  • Fig. 2 shows additionally a bottom part of the silicon substrate 1 drafted in dotted lines to illustrate a part of the substrate which is removed during the manufacturing process.
  • the improved integrated magnetic transducer as described in reference to Fig. 1 is fabricated in a series of chemical etching and film deposition steps and makes use of a Si-processing technique, which is known as anisotropic etching in single crystal silicon of (100) orientation.
  • This etching technique has been described,for example, by B assous et al, in an article entitled “The Fabrication of High Precision Nozzles by the Anisotropic Etching of (100) Silicon” in "Journal of the Electrochemical Society", V ol. 125, 48, pages 1321 to 1327 in full detail; therefore, it seems not to be necessary to describe this fabrication technique furthermore.
  • the cross sectional view shown in Fig. 2 illustrates a variant in use of this technique to etch into a silicon substrate of (100) orientation a V-shaped groove with a a bottom opening.
  • the etching process is stopped before the apex of the groove is extending through the silicon substrate.
  • the silicon substrate comprises the upper part drafted in full lines and a bottom part drafted by dotted lines in the cross sectional view.
  • This grooved silicon substrate is processed further by depositing the aforementioned series of layers.
  • the last steps in this fabrication process are to achieve the gap of the magnetic transducer by removing the bottom part of the silicon substrate 1. This can be done chemically or mechanically, for example by etching or back grinding.
  • a grinding process which is finished by a lapping step can be controlled by measuring the magnetic circuit of the transducer. When grinding reaches the range of the apex of the V-shaped groove at level Ll, the magnetic circuit begins to open and changes its characteristic accordingly. The magnetic circuit is completely open when the grinding process reaches a second level L2 indicated by another dotted line. Back lapping to the final surface has to be processed very carefully. Since this surface in operation of the magnetic transducer is directed to the magnetic recording medium 2, it has to have a planar characteristic to avoid undue wear of the recording medium. The other feature is to achieve exactly the gap length which determines one of the main characteristics of the magnetic transducer.
  • a change in the order of processing steps offers the advantage to have better control of this lapping process for example by a light sensitive device.
  • the first insulating layer 11, and the first layer of magnetically inductive material 12 and the second insulating 11' are serially deposited.
  • the back-grinding steps are executed.
  • the grinding process reaching the level L2 now opens a slot at the apex of the V-shaped groove.
  • the amount of light which is let through this opening can be a measure for the length of the opening which determines the length of the transducer gap.
  • the fabrication of the magnetic transducer is then continued in normal order of deposition steps starting with the filling of the V-shaped groove with the electrically conductive layer 13 as described above.
  • Fig. 3 illustrates another embodiment of the invention with a somewhat different structure of the magnetic transducer.
  • the main difference of the structure to the aforementioned embodiments is that the anisotropic etching process is performed slightly differently.
  • the groove is etched into the silicon substrate 1 just as deeply as to achieve a flat "pan” with declining sides and a flat horizontal bottom part.
  • the so prepared silicon substrate 1 will be further processed by depositing the first insulating layer 11, the first layer of magnetically inductive material 12 and the second insulating layer 11' in series.
  • a centered slotted hole has to be drilled into the bottom part of the flat groove. This can be performed by conventional machining or by a laser beam drilling, both techniques are very well known, and are not to be described in further detail.
  • This structure more or less has the features of a "horizontal" single turn transducer.
  • a quasi-vertical structure which is shown in Fig. 3 in reference to this detail of the transducer gap is manufactured in a slightly different order of manufacturing steps.
  • the anisotropic etching process the centered slotted hole is formed.
  • the process is then continued in the described order of deposition steps. The result is the structure shown in Fig. 3.
  • This structure of a magnetic transducer, having a flat groove offers the opportunity to achieve an electrically conductive layer 13 with necessary dimensions for high current density without a very deep groove and a relatively thick substrate.
  • the known Si-processing technique gives a choice to adjust the magnetic transducer to different applications in reference to the characteristics of the electrically conductive layer 13.
  • Gold is often used as conductive material.
  • aluminum is also possible to use aluminum to form this layer. In this case, aluminum powder is filled into the groove and the device is then heated to about 600°, to sinter the aluminum powder to a consistently electrically conductive layer 13. The so prepared device has to be cooled down carefully. This phase is critical, as well known, because of the characteristic of nickel iron compositions which may be used to form the layers of magnetically inductive material. It is known that these Ni-Fe alloys have a cool down cycle that determines its properties.
  • a multi-channel device may be built up.
  • Such multi-channel transducers are, for example, very often used in peripherals of data processing systems.
  • Fig. 4 illustrates a schematic diagram of top view of a silicon substrate carrying an aligned row of magnetic transducers 40 which are closely spaced apart from each other. Each of these transducers 40 has a pair of respective contact leads 16.
  • the yoke of the magnetic transducer is formed of the second layer of magnetically inductive material 15. As indicated in Fig. 4 the distance T between respective contact leads 16 of two neighboring magnetic transducers 40 defines a pattern of tracks of the multi-channel device.
  • such a thin-film magnetic transducer may have electronic read/write circuits for operating the magnetic transducer, which circuits are integrated on the same silicon substrate.
  • Fig. 5 shows schematically a cross sectional view of the silicon substrate 1 with a magnetic transducer structure 51 as described herein before and additionally with an integrated transistor 52.
  • the transistor 52 is isolated from the remaining structure on the silicon substrate by shallow V-shaped grooves 17 of PQLY-Si.
  • the transistor is built up of collector area 18 disposed on a n + doped buried region 19 of the silicon substrate. Atop of the collector area 18 another area 19 forming a base of the transistor is disposed. The base is covered by another area 20 which is an emitter of the transistor. As illustrated to build up a metal contact on the emitter there is disposed a heavy doped layer 21 and on it a contact pad 22 of aluminum.
  • Such structures of an electronic circuit are known for a variety of possible applications as well as respective fabrication techniques. It is to be understood that within the scope of this invention any one of known Si-processing techniques for integrated electronic circuits may be utilized.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
EP80108128A 1980-01-14 1980-12-22 Transducteur magnétique intégré et procédé pour sa fabrication Withdrawn EP0032230A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11196980A 1980-01-14 1980-01-14
US111969 1980-01-14

Publications (2)

Publication Number Publication Date
EP0032230A2 true EP0032230A2 (fr) 1981-07-22
EP0032230A3 EP0032230A3 (fr) 1982-01-13

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2510290A1 (fr) * 1981-07-27 1983-01-28 Hitachi Ltd Tete magnetique a couche mince et procede de fabrication d'une telle tete magnetique
EP0080373A1 (fr) * 1981-11-23 1983-06-01 Xerox Corporation Procédé de formation de rangs de têtes magnétiques à films minces
FR2559297A1 (fr) * 1984-02-03 1985-08-09 Commissariat Energie Atomique Nouveau patin de vol pour tetes magnetiques d'enregistrement
FR2559296A1 (fr) * 1984-02-03 1985-08-09 Commissariat Energie Atomique Nouveau patin du type catamaran pour tetes magnetiques d'enregistrement et son procede de fabrication
WO1986000457A1 (fr) * 1981-04-15 1986-01-16 Eastman Kodak Company Tete magnetique multipiste
EP0185289A1 (fr) * 1984-12-21 1986-06-25 Siemens Aktiengesellschaft Tête magnétique à film mince sur un substrat non-magnétique pour magnétisation perpendiculaire
FR2641110A1 (fr) * 1988-12-23 1990-06-29 Thomson Csf
FR2664729A1 (fr) * 1990-07-11 1992-01-17 Commissariat Energie Atomique Procede de fabrication de tete magnetique possedant un entrefer presentant un azimut controlable.
EP0559432A3 (fr) * 1992-03-04 1993-10-27 Ampex Systems Corporation Transducteur magnétique laminé à haute fréquence et sa méthode de fabrication
EP0605984A3 (fr) * 1993-01-08 1996-01-31 Ibm Structure unitaire de transducteur magnétique et de suspension.
FR2727556A1 (fr) * 1994-11-29 1996-05-31 Thomson Csf Procede de realisation d'une tete magnetique d'enregistrement/lecture et tete d'enregistrement/lecture
US5883760A (en) * 1992-10-20 1999-03-16 Mitsubishi Denki Kabushiki Kaisha Magnetic structure and magnetic head using the same
EP1045375A3 (fr) * 1999-04-15 2006-03-08 Matsushita Electric Industrial Co., Ltd. Dispositif de reproduction magnétique, tête magnétique l'utilisant et méthode pour produire la tête magnétique

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2674659A (en) * 1951-11-02 1954-04-06 Bell Telephone Labor Inc Magnetic head and method of making same
FR1159994A (fr) * 1956-10-01 1958-07-04 Bull Sa Machines Tête magnétique de lecture et d'enregistrement et son procédé de fabrication
US3672043A (en) * 1965-12-06 1972-06-27 Ncr Co Miniature magnetic head
US3626396A (en) * 1968-10-03 1971-12-07 Ibm Thin-film magnetic recording head
DE1952402A1 (de) * 1969-10-17 1971-04-22 Philips Patentverwaltung Magnetkopf
US3968565A (en) * 1972-09-01 1976-07-13 U.S. Philips Corporation Method of manufacturing a device comprising a semiconductor body
US3800193A (en) * 1972-09-05 1974-03-26 Ibm Magnetic sensing device
US3986210A (en) * 1973-02-20 1976-10-12 Matsushita Electric Industrial Co., Ltd. Magnetic head device using printed circuit techniques
JPS51117020A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Magnetic head and production method of it

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986000457A1 (fr) * 1981-04-15 1986-01-16 Eastman Kodak Company Tete magnetique multipiste
FR2510290A1 (fr) * 1981-07-27 1983-01-28 Hitachi Ltd Tete magnetique a couche mince et procede de fabrication d'une telle tete magnetique
EP0080373A1 (fr) * 1981-11-23 1983-06-01 Xerox Corporation Procédé de formation de rangs de têtes magnétiques à films minces
FR2559297A1 (fr) * 1984-02-03 1985-08-09 Commissariat Energie Atomique Nouveau patin de vol pour tetes magnetiques d'enregistrement
FR2559296A1 (fr) * 1984-02-03 1985-08-09 Commissariat Energie Atomique Nouveau patin du type catamaran pour tetes magnetiques d'enregistrement et son procede de fabrication
EP0152327A1 (fr) * 1984-02-03 1985-08-21 Commissariat A L'energie Atomique Procédé de réalisation de dispositifs d'écriture et de lecture à structure intégrée pour enregistrement magnétique
EP0152328A3 (en) * 1984-02-03 1985-09-18 Commissariat A L'energie Atomique Etablissement De Caractere Scientifique Technique Et Industriel Device for writing on and reading from a magnetic carrier, and process for its production
US4698708A (en) * 1984-02-03 1987-10-06 Commissariat A L'energie Atomique Device for magnetically reading and writing on a flying support
EP0185289A1 (fr) * 1984-12-21 1986-06-25 Siemens Aktiengesellschaft Tête magnétique à film mince sur un substrat non-magnétique pour magnétisation perpendiculaire
FR2641110A1 (fr) * 1988-12-23 1990-06-29 Thomson Csf
WO1990007772A1 (fr) * 1988-12-23 1990-07-12 Thomson-Csf Procede de realisation d'une tete magnetique d'enregistrement lecture et tete magnetique obtenue par ce procede
US5123156A (en) * 1988-12-23 1992-06-23 Thomson-Csf Method for the production of a read-write magnetic head
WO1992002015A3 (fr) * 1990-07-11 1992-03-19 Commissariat Energie Atomique Procede de realisation de tetes d'ecriture et/ou lecture pour enregistrement magnetique
FR2664729A1 (fr) * 1990-07-11 1992-01-17 Commissariat Energie Atomique Procede de fabrication de tete magnetique possedant un entrefer presentant un azimut controlable.
US5250150A (en) * 1990-07-11 1993-10-05 Commissariat A L'energie Atomique Process for producing read and/or write heads for magnetic recording
EP0559432A3 (fr) * 1992-03-04 1993-10-27 Ampex Systems Corporation Transducteur magnétique laminé à haute fréquence et sa méthode de fabrication
US5883760A (en) * 1992-10-20 1999-03-16 Mitsubishi Denki Kabushiki Kaisha Magnetic structure and magnetic head using the same
US6236538B1 (en) * 1992-10-20 2001-05-22 Mitsubishi Denki Kabushiki Kaisha Magnetic structure and magnetic head using the same
EP0605984A3 (fr) * 1993-01-08 1996-01-31 Ibm Structure unitaire de transducteur magnétique et de suspension.
CN1058799C (zh) * 1993-01-08 2000-11-22 国际商业机器公司 薄膜磁传感器和悬架组件及其制造方法以及磁盘驱动组件
FR2727556A1 (fr) * 1994-11-29 1996-05-31 Thomson Csf Procede de realisation d'une tete magnetique d'enregistrement/lecture et tete d'enregistrement/lecture
EP0716410A3 (fr) * 1994-11-29 1998-04-15 Thomson-Csf Procédé de réalisation d'une tête magnétique d'enregistrement/lecture et tête d'enregistrement/lecture
US5781986A (en) * 1994-11-29 1998-07-21 Thomson-Csf Method of making a magnetic recording/reading head
EP1045375A3 (fr) * 1999-04-15 2006-03-08 Matsushita Electric Industrial Co., Ltd. Dispositif de reproduction magnétique, tête magnétique l'utilisant et méthode pour produire la tête magnétique

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