EP0040306A1 - Verfahren zur Herstellung grobkörniger Halbleiterbänder - Google Patents

Verfahren zur Herstellung grobkörniger Halbleiterbänder Download PDF

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Publication number
EP0040306A1
EP0040306A1 EP81102203A EP81102203A EP0040306A1 EP 0040306 A1 EP0040306 A1 EP 0040306A1 EP 81102203 A EP81102203 A EP 81102203A EP 81102203 A EP81102203 A EP 81102203A EP 0040306 A1 EP0040306 A1 EP 0040306A1
Authority
EP
European Patent Office
Prior art keywords
wheel
semiconductor material
ribbons
semiconductor
psig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP81102203A
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English (en)
French (fr)
Other versions
EP0040306B1 (de
Inventor
Praveen Chaudhari
René Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0040306A1 publication Critical patent/EP0040306A1/de
Application granted granted Critical
Publication of EP0040306B1 publication Critical patent/EP0040306B1/de
Expired legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/06—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars
    • B22D11/0637—Accessories therefor
    • B22D11/0697—Accessories therefor for casting in a protected atmosphere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/005—Continuous casting of metals, i.e. casting in indefinite lengths of wire

Definitions

  • This invention relates to the manufacture of large grain semiconductor ribbons suitable for solar cell applications.
  • Another object of the invention is to establish a method for production of semiconductor ribbons with an average grain size of about 20 ⁇ m and greater.
  • Still another object of this invention is .to provide a method for producing semiconductor ribbons with a coherent oxide.
  • Yet another object of the invention is to provide a method for the production of substantial volumes of silicon ribbon.
  • the present invention as claimed provides a method for fabricating large grain semiconductor ribbons, wherein a molten semiconductor material is discharged onto a rotating cylindrical surface which is rotating with a linear velocity of not greater than 36 m/s.
  • FIG. 1 A device suitable for the implementation of this invention is illustrated in FIG. 1.
  • a tube 10 is employed for containing a molten semiconductor material 12.
  • the semiconductor material 12 is maintained molten by a furnace 14 which surrounds the tube 10.
  • the tube 10 has a nozzle 16 which is employed to direct a molten stream 18 of the semiconductor material 12. Examples of such semiconductor materials are Si, Ge, and Ga-As.
  • a gas supply tube 20 feeds gas into the tube 10 via a regulating valve 22.
  • the regulating valve 22 controls pressure in the tube 10 above the molten semiconductor material 12. This pressure serves to discharge the molten semiconductor material 12 through the nozzle 16 and forms the stream 18.
  • the stream 18 impinges on a rotating wheel 24.
  • the stream 18 impacts the wheel 24 at an angle 6 such that there is a component of the stream direction which is in the direction of a tangent to the rotating wheel 24 at the point of contact 25. This component should be in the direction of the rotation.
  • the wheel 24 is driven from a power drive 26 such as a motor.
  • the wheel 24 should be a conducting material. Stainless steel, as well as copper, have been found to be satisfactory materials.
  • the stream 18 impinges on the rotating cylindrical surface 28 thereby generating a semiconductor ribbon 30.
  • a gas is supplied to the gas supply tube 20 and pressure.? in the tube 10 is maintained above the semiconductor material by the regulating valve 22. This pressure p controls the discharge of the stream 18 from the nozzle 16. The stream 18 impinges upon the wheel 24 which is rotating as illustrated with an angular speed ⁇ .
  • the cylindrical surface 28 may not obtain velocities greater than 36 m/s without substantially reducing the ultimate average grain size of the resulting semiconductor ribbon 30.
  • FIG.. 2 offers a graphical representation of the effect of wheel speed on the average grain size.
  • semiconductor material ribbons were generated on a copper wheel, having a diameter of 7,6 cm.
  • Curves A, B and C are for silicon where the molten silicon is heated to about 1500 C and the gas injection pressure p was maintained at respectively 4 psig, 8 psig, and 15 psig for a nozzle having a nominal opening 1 mm in diameter. As the pressure is increased the ribbon becomes thinner and above about 15 psig the ribbon becomes discontinuous and forms flakes. It is apparent that as one increases the pressure there is an increase in the ultimate grain size which can be obtained.
  • Wheel speed has a marked effect on the ultimate grain size. It can be seen that at rpm (revolutions per minute) values of about 9000, i.e. a surface speed of about 36 m/s, the grain size has dropped to the neighborhood of slightly less than 10 ⁇ m and as the velocity of the wheel is further increased the change in grain size is not substantially affected. This decrease in grain size occurs for all pressures studied. The drop is sharpest for curves B and C.
  • the velocity of the wheel is presented both in terms of rotational speed (rpm) and the linear velocity (m/s) of the cylindrical surface 28.
  • the pressures are given in terms of the gas ejection pressure for the resulting semiconductor stream 18. It was found that changing the orifice diameter from 0,5 mm to 1,5 mm did not noticeably affect the grain size of the resulting ribbons.
  • the linear velocity of the surface of the wheel as well as ejection pressure are the appropriate parameters for the control of relative grain size of the resulting ribbon. These parameters can be maintained independent of the geometry of the equipment employed.
  • Curve D of FIG. 2 illustrates the effect of velocity on the grain size of germanium semiconductor ribbons. These ribbons were generated from molten germanium which was heated to about 1000 0 C and ejected at a pressure of 15 psig through a nozzle having a nominal diameter of 1 mm. As can be seen by comparing curves C and D, the germanium data as is the case for the silicon data show little dependence of size or speed at low speeds. The tabular data used to generate curve D has been incorporated into Table I.
  • Both germanium and silicon form oxides on the surface of the resulting ribbons when the ribbons are generated in an atmosphere of air. These oxides are sufficient to provide an intermediate layer between the silicon and a metal deposited thereon. The resulting metal silicon junctions form Schottky barriers.
  • the oxide may be prevented by generating the ribbon under a protective atmosphere.
  • Argon and helium have been found to be effective atmospheres in which to generate the ribbons.
  • the wheel 24 and nozzle 16 should be placed in a chamber 32 as illustrated by the broken line in FIG. 1. This chamber will allow the atmosphere to be controlled.
  • the present invention will be of use in the semiconductor industry and in particular in solar cell production.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
EP81102203A 1980-05-15 1981-03-24 Verfahren zur Herstellung grobkörniger Halbleiterbänder Expired EP0040306B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15025780A 1980-05-15 1980-05-15
US150257 1980-05-15

Publications (2)

Publication Number Publication Date
EP0040306A1 true EP0040306A1 (de) 1981-11-25
EP0040306B1 EP0040306B1 (de) 1984-07-25

Family

ID=22533727

Family Applications (1)

Application Number Title Priority Date Filing Date
EP81102203A Expired EP0040306B1 (de) 1980-05-15 1981-03-24 Verfahren zur Herstellung grobkörniger Halbleiterbänder

Country Status (3)

Country Link
EP (1) EP0040306B1 (de)
JP (1) JPS577119A (de)
DE (1) DE3164971D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987000460A1 (fr) * 1985-07-21 1987-01-29 Concast Standard Ag Procede et dispositif de coulee de bandes metalliques directement a partir de la masse en fusion

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6654751B2 (ja) 2016-09-14 2020-02-26 トヨタ自動車株式会社 車両用変速機

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812901A (en) * 1973-01-30 1974-05-28 Battelle Development Corp Method of producing continuous filaments using a rotating heat-extracting member
US4177856A (en) * 1978-08-28 1979-12-11 General Electric Company Critical gas boundary layer Reynolds number for enhanced processing of wide glassy alloy ribbons
DE2830522A1 (de) * 1978-07-12 1980-01-31 Licentia Gmbh Verfahren und vorrichtung zur herstellung von folien, baendern oder platten aus silizium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3297436A (en) * 1965-06-03 1967-01-10 California Inst Res Found Method for making a novel solid metal alloy and products produced thereby
US4142571A (en) * 1976-10-22 1979-03-06 Allied Chemical Corporation Continuous casting method for metallic strips
JPS5472954A (en) * 1977-11-23 1979-06-11 Noboru Tsuya Semiconductor thin film and method of fabricating same
JPS5552218A (en) * 1978-10-12 1980-04-16 Noboru Tsuya Semiconductor thin belt and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812901A (en) * 1973-01-30 1974-05-28 Battelle Development Corp Method of producing continuous filaments using a rotating heat-extracting member
DE2830522A1 (de) * 1978-07-12 1980-01-31 Licentia Gmbh Verfahren und vorrichtung zur herstellung von folien, baendern oder platten aus silizium
US4177856A (en) * 1978-08-28 1979-12-11 General Electric Company Critical gas boundary layer Reynolds number for enhanced processing of wide glassy alloy ribbons

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987000460A1 (fr) * 1985-07-21 1987-01-29 Concast Standard Ag Procede et dispositif de coulee de bandes metalliques directement a partir de la masse en fusion

Also Published As

Publication number Publication date
JPS577119A (en) 1982-01-14
DE3164971D1 (en) 1984-08-30
EP0040306B1 (de) 1984-07-25

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