EP0054645A2 - Commutateur à diode PIN - Google Patents

Commutateur à diode PIN Download PDF

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Publication number
EP0054645A2
EP0054645A2 EP81108177A EP81108177A EP0054645A2 EP 0054645 A2 EP0054645 A2 EP 0054645A2 EP 81108177 A EP81108177 A EP 81108177A EP 81108177 A EP81108177 A EP 81108177A EP 0054645 A2 EP0054645 A2 EP 0054645A2
Authority
EP
European Patent Office
Prior art keywords
pin diode
diode switch
compensation
lines
switch according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP81108177A
Other languages
German (de)
English (en)
Other versions
EP0054645B1 (fr
EP0054645A3 (en
Inventor
Manfred Wondrowitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to AT81108177T priority Critical patent/ATE16059T1/de
Publication of EP0054645A2 publication Critical patent/EP0054645A2/fr
Publication of EP0054645A3 publication Critical patent/EP0054645A3/de
Application granted granted Critical
Publication of EP0054645B1 publication Critical patent/EP0054645B1/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the invention relates to a PIN diode switch with high blocking attenuation.
  • BIN diodes In the area of higher frequencies, PIN diodes are often used for switching tasks. BIN diodes have an effective resistance for HF, the size of which depends on the strength of an impressed control direct current. If no direct current flows through the PIN diode, then it only has a small, very low-loss capacity without parametric effects. The capacitance is independent of the RF voltage applied.
  • diode chain is useful for microwaves, in which PIN diodes are coupled to one another via so-called inverting elements (four-pole) - in the microwave range these are preferably A / 4 lines.
  • the "inverting" elements rotate the phase of the voltage by 90 ° at the operating frequency.
  • all diodes are grounded on one side and always have the same switching state with each other.
  • the object of the invention is to provide a PIN diode switch which, with little circuit complexity, has a high blocking attenuation and a low pass loss.
  • the object is achieved in that an arrangement with two series-connected inverting four-pole is provided between an input and an output, that a PIN diode is connected as a shunt between the individual conductors of the lines in the connection point of these four-pole and that between input and output a compensation network is connected in parallel.
  • the circuit becomes particularly simple if ⁇ / 4 lines are provided as inverting four-poles.
  • the invention is based on the knowledge that a higher blocking attenuation is possible through compensation.
  • the circuit arrangement is particularly simple and space-saving.
  • the PIN diode D is switched between two ⁇ / 4 lines.
  • a decoupling network K is connected in parallel with the ⁇ / 4 lines. With this arrangement, a blocking attenuation higher than 25 dB is achieved. RF losses are generally lower than diode networks. In the case of layered circuits, the area requirement decreases and compensation of undesirable diode reactances is possible in part.
  • the il / 4 lines and the compensation network have a common ground line.
  • the compensation network consists of a parallel connection of a compensation resistor and a compensation capacitor in the series branch.
  • This simple parallel connection of a resistor with a capacitance enables the .PIN diode D to be compensated over a broadband range.
  • the PIN diode switch is implemented using layer technology and the ⁇ / 4 lines are implemented as printed conductor tracks.
  • This circuit is characterized by a particularly small footprint. The entire back of the printed circuit serves as a ground.
  • the compensation capacitance is formed by a special configuration of the feed lines of the ⁇ / 4 lines.
  • the compensation capacitance C K is generated by a special line routing.
  • Fig. 1 shows the basic circuit diagram of a PIN diode switch.
  • a generator G with the internal resistance Z I is connected to a line L via a decoupling capacitor C E1 .
  • the terminating resistor Z V is connected to the other end of the line L via a second decoupling capacitor C E2 .
  • the PIN diode e D is connected between the line L and ground in parallel to the consumer Z V or in parallel to the generator G.
  • the equivalent circuit diagram of the PIN diode consists of a parallel capacitance C P ⁇ 0.3 pF, which is parallel to the connection terminals of the PIN -Diodes lies.
  • FIG. 2 An arrangement according to the invention is shown in FIG. 2.
  • the generator G with the internal resistance Z I is connected via the first decoupling capacitor C E1 to the input E of a ⁇ / 4-long line L1 with the practically real characteristic impedance Z L.
  • the line L1 was shown as a four-pole, the second input of which is connected to the second connection of the generator G. Between the two outputs of line L1 - these are the individual conductors L11 and L12 - the PIN diode D is connected as a cross-member, which is followed by a second ⁇ / 4 line L2, at the output A of which a consumer Z v is connected via a second decoupling capacitor C E2 is switched on.
  • a further four-pole K is connected, which contains the compensation circuit - a compensation resistor R K connected between input E and output A of the arrangement, to which a compensation capacitance C K can be connected in parallel.
  • the lines L1 and L2 have the characteristic impedance Z L , which is generally the same or similar to the generator resistance Z I and the consumer resistance Zv .
  • this residual voltage causes the PIN diode to appear as a source that generates a wave propagating towards the consumer.
  • the decoupling is limited.
  • the longitudinal inductance L D of the PIN diode has to be taken into account, it can be largely compensated for by the compensation capacitor C K.
  • FIG. 3 shows the structure of the PIN diode switch according to the invention in layered technology.
  • the PIN diode D is used here in the "chip on rivet" design.
  • L1 and L2 represent the ⁇ / 4 lines.
  • the compensation is used to compensate the diode reactances resisted R K and the compensation capacitor C K.
  • the compensation capacitor C K can be simulated by a special line routing, in which the lines L1 and L2 are symmetrical and are in line with one another. move closer to each other at the transition to the supply lines Z1 and Z2.
  • the input of the circuit was designated E and the output A as in FIG.
  • the copper cladding on the back of the layer circuit serves as the ground. With such an arrangement, blocking attenuation greater than 60 dB can be achieved.
  • FIG. 4 A variant for increasing the bandwidth is shown in FIG. 4.
  • the compensation resistor R K was replaced by two compensation resistors R K1 and R K2 .
  • the compensation resistors R K1 and R K2 are arranged at a distance ⁇ L1 smaller than ⁇ / 4.
  • the distance ⁇ L2 of the second compensation resistor R K2 to the diode D is also less than ⁇ / 4.
  • the curve of the blocking attenuation as a function of the frequency f is shown in curve 3 of FIG. 5.
  • the line lengths ⁇ L1 and ⁇ L 2 damping curves of different widths can be achieved.
  • the attenuation curve of the circuit wiring was shown in FIG. 2 as curve 1.
  • curve 4 shows an uncompensated diode for comparison.

Landscapes

  • Electrophonic Musical Instruments (AREA)
  • Electronic Switches (AREA)
  • Attenuators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Reduction Or Emphasis Of Bandwidth Of Signals (AREA)
  • Filters And Equalizers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
EP81108177A 1980-12-18 1981-10-09 Commutateur à diode PIN Expired EP0054645B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT81108177T ATE16059T1 (de) 1980-12-18 1981-10-09 Pin-dioden-schalter.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3047869 1980-12-18
DE3047869A DE3047869C1 (de) 1980-12-18 1980-12-18 PIN-Diodenschalter

Publications (3)

Publication Number Publication Date
EP0054645A2 true EP0054645A2 (fr) 1982-06-30
EP0054645A3 EP0054645A3 (en) 1982-12-01
EP0054645B1 EP0054645B1 (fr) 1985-10-09

Family

ID=6119579

Family Applications (1)

Application Number Title Priority Date Filing Date
EP81108177A Expired EP0054645B1 (fr) 1980-12-18 1981-10-09 Commutateur à diode PIN

Country Status (5)

Country Link
EP (1) EP0054645B1 (fr)
AT (1) ATE16059T1 (fr)
AU (1) AU529008B2 (fr)
DE (1) DE3047869C1 (fr)
YU (1) YU296281A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534980A1 (de) * 1985-10-01 1987-04-02 Licentia Gmbh Hohlleiterschalter
RU2181928C2 (ru) * 1991-06-14 2002-04-27 Чэннел Маста Лимитед Коммутатор с высокой развязкой

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012208529B4 (de) 2012-05-22 2018-10-18 Rohde & Schwarz Gmbh & Co. Kg Elektronischer Schalter mit Kompensation nichtlinearer Verzerrungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775708A (en) * 1973-01-12 1973-11-27 Anaren Microwave Inc Microwave signal attenuator
US3859609A (en) * 1973-07-23 1975-01-07 Texas Instruments Inc Absorptive pin attenuators
JPS53136952A (en) * 1977-05-06 1978-11-29 Fujitsu Ltd High-frequency switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534980A1 (de) * 1985-10-01 1987-04-02 Licentia Gmbh Hohlleiterschalter
RU2181928C2 (ru) * 1991-06-14 2002-04-27 Чэннел Маста Лимитед Коммутатор с высокой развязкой

Also Published As

Publication number Publication date
AU7859581A (en) 1982-06-24
EP0054645B1 (fr) 1985-10-09
AU529008B2 (en) 1983-05-19
EP0054645A3 (en) 1982-12-01
ATE16059T1 (de) 1985-10-15
YU296281A (en) 1984-06-30
DE3047869C1 (de) 1982-05-27

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