EP0056590A1 - Bain galvanique pour le dépôt de revêtements de rhodium - Google Patents

Bain galvanique pour le dépôt de revêtements de rhodium Download PDF

Info

Publication number: EP0056590A1
Authority: EP; European Patent Office
Prior art keywords: rhodium; acid; bath; galvanic; deposition
Prior art date: 1981-01-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP82100109A

Other languages

German (de)

English (en)

Other versions

EP0056590B1 (fr

Inventor

Erika Kreuter

Werner Kuhn

Wolfgang Dipl.-Chem. Zilske

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Evonik Operations GmbH

Original Assignee

Degussa GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-01-15

Filing date

1982-01-09

Publication date

1982-07-28

1982-01-09 Application filed by Degussa GmbH filed Critical Degussa GmbH

1982-07-28 Publication of EP0056590A1 publication Critical patent/EP0056590A1/fr

1985-04-24 Application granted granted Critical

1985-04-24 Publication of EP0056590B1 publication Critical patent/EP0056590B1/fr

Status Expired legal-status Critical Current

Links

229910052703 rhodium Inorganic materials 0.000 title claims abstract description 29
239000010948 rhodium Substances 0.000 title claims abstract description 29
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical group [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 title claims abstract description 29
238000000576 coating method Methods 0.000 title claims abstract description 11
230000008021 deposition Effects 0.000 title claims description 6
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 18
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 17
229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 9
YWFDDXXMOPZFFM-UHFFFAOYSA-H rhodium(3+);trisulfate Chemical compound [Rh+3].[Rh+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O YWFDDXXMOPZFFM-UHFFFAOYSA-H 0.000 claims abstract description 6
229910019142 PO4 Inorganic materials 0.000 claims abstract description 5
NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 5
239000010452 phosphate Substances 0.000 claims abstract description 5
LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 6
125000003118 aryl group Chemical group 0.000 claims description 4
WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 claims description 3
229940044654 phenolsulfonic acid Drugs 0.000 claims description 3
WMFZVLIHQVUVGO-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanol Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(O)C1=CC=CC=C1 WMFZVLIHQVUVGO-UHFFFAOYSA-N 0.000 claims description 3
ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
239000000080 wetting agent Substances 0.000 claims description 2
PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 claims 1
KZVLNAGYSAKYMG-UHFFFAOYSA-N pyridine-2-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=N1 KZVLNAGYSAKYMG-UHFFFAOYSA-N 0.000 claims 1
DVECLMOWYVDJRM-UHFFFAOYSA-N pyridine-3-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CN=C1 DVECLMOWYVDJRM-UHFFFAOYSA-N 0.000 abstract description 3
GPUMPJNVOBTUFM-UHFFFAOYSA-N naphthalene-1,2,3-trisulfonic acid Chemical compound C1=CC=C2C(S(O)(=O)=O)=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC2=C1 GPUMPJNVOBTUFM-UHFFFAOYSA-N 0.000 abstract description 2
238000000151 deposition Methods 0.000 abstract 1
239000001117 sulphuric acid Substances 0.000 abstract 1
235000011149 sulphuric acid Nutrition 0.000 abstract 1
239000000654 additive Substances 0.000 description 5
239000010938 white gold Substances 0.000 description 4
229910000832 white gold Inorganic materials 0.000 description 4
QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
239000002253 acid Substances 0.000 description 2
150000007513 acids Chemical class 0.000 description 2
WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 2
150000002894 organic compounds Chemical class 0.000 description 2
RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
239000005711 Benzoic acid Substances 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
108010010803 Gelatin Proteins 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
-1 aromatic sulfonic acids Chemical class 0.000 description 1
235000010233 benzoic acid Nutrition 0.000 description 1
QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
125000004432 carbon atom Chemical group C* 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
229920000159 gelatin Polymers 0.000 description 1
239000008273 gelatin Substances 0.000 description 1
235000019322 gelatine Nutrition 0.000 description 1
235000011852 gelatine desserts Nutrition 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
150000007524 organic acids Chemical class 0.000 description 1
235000005985 organic acids Nutrition 0.000 description 1
238000007747 plating Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
150000003460 sulfonic acids Chemical class 0.000 description 1
229910052716 thallium Inorganic materials 0.000 description 1
BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
231100000331 toxic Toxicity 0.000 description 1
230000002588 toxic effect Effects 0.000 description 1
NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
- C25D3/52—Electroplating: Baths therefor from solutions of platinum group metals characterised by the organic bath constituents used

Definitions

the invention relates to a galvanic bath for the deposition of fog-free, shiny rhodium coatings, which consists of rhodium sulfate or phosphate, sulfuric acid and / or phosphoric acid.
Rhodium coatings are used for decorative rhodium plating, especially for the coating of white gold. needed, which have a veil-free high gloss and a particularly light gray tone similar to the white gold color.
the layer thicknesses of these coatings are between 0.1 and 2 ⁇ m.
Baths containing rhodium phosphate or sulfate and sulfuric or phosphoric acid are mainly used to deposit galvanic rhodium layers. If layers of more than 0.1 ⁇ m thickness are deposited, these baths cannot be used to deposit the required, haze-free, glossy coatings without additional additives. Even the light gray color of the layers is difficult to obtain reproducibly with the known baths, even if the necessary conditions are exactly met during the manufacture of the rhodium preparations.
Coatings from these baths also have strong internal tensions, so that numerous cracks appear in the layer even with very thin layers.
the corrosion protective effect of the rhodium layer is greatly reduced.
Rhodium baths with various additives are already known, which are said to improve the mentioned disadvantageous properties of the deposited rhodium layers.
Metallic additives such as thallium (CH - PS 553 255) or copper (FR - PS 15 77 503) have the disadvantage that they are highly toxic or do not give the desired light color.
a lkalimetallchloriden such as MgCl 2 or AlCl 3 (DE-AS 23 29 578)
MgCl 2 or AlCl 3 DE-AS 23 29 578
the constant chloride extract makes it difficult to achieve constant deposition conditions.
a rhodium bath is known (DE-PS 627 264), which may contain benzoic acid, phenol solution and gelatin. Furthermore, polybasic organic acids (DE-AS 22 42 503) and glutaric acid (DE-OS 22 42 503) are known as additives. However, the rhodium layers made from these baths do not show the desired white gold color.
the rhodium bath additionally contains a sulfonic acid.
These baths preferably contain an aromatic sulfonic acid.
sulfonic acids especially aromatic sulfonic acids, preferably phenolsulfonic acid, pyridine-3-sulfonic acid or naphthalene-tri-sulfonic acid
aromatic sulfonic acids preferably phenolsulfonic acid, pyridine-3-sulfonic acid or naphthalene-tri-sulfonic acid
Alkylsulfonic acids with 1 to 7 carbon atoms such as ethanesulfonic acid, butanesulfonic acid and 2-hydroxyethanesulfonic acid or vinylsulfonic acid, can also be used for this.
a phosphonic acid e.g. B. of 1 hydroxyethane-1,1-diphosphonic acid and / or a stable wetting agent, e.g. B. a fluorosurfactant, adherence of the hydrogen formed on the cathode is prevented, whereby the uniformity of color and gloss on the entire surface to be rhodium-plated is further improved.
a phosphonic acid e.g. B. of 1 hydroxyethane-1,1-diphosphonic acid and / or a stable wetting agent, e.g. B. a fluorosurfactant
the baths according to the invention advantageously contain 1 - 10 g / 1 rhodium as sulfate and / or phosphate, 20 - 200 g / 1 sulfuric, phosphoric acid or mixtures of both acids and 0.1 - 5 g / 1 of an aromatic sulfonic acid.
the baths can be operated at current densities of 0.5 - 5 / A / dm 2 and temperatures up to 60 ° C.
a 0.5 ⁇ m thick rhodium layer is deposited from a rhodium bath containing 2 g / l rhodium as rhodium sulfate and 40 g / 1 sulfuric acid at 40 ° C. and a current density of 1 A / dm 2 .
the layer is milky-matt.
a 0.2 ⁇ m thick rhodium layer is deposited from a rhodium bath containing 5 g / l rhodium as rhodium phosphate, 10 g / 1 phosphoric acid and 60 g / 1 sulfuric acid at room temperature and a current density of 1 A / dm 2 .
the layer is glossy and has a light reflectance of 0.716.

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Electroplating And Plating Baths Therefor (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

EP82100109A 1981-01-15 1982-01-09 Bain galvanique pour le dépôt de revêtements de rhodium Expired EP0056590B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE3100997		1981-01-15
DE3100997A DE3100997C2 (de)	1981-01-15	1981-01-15	Bad zum galvanischen Abscheiden von Rhodiumüberzügen

Publications (2)

Publication Number	Publication Date
EP0056590A1 true EP0056590A1 (fr)	1982-07-28
EP0056590B1 EP0056590B1 (fr)	1985-04-24

Family

ID=6122621

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP82100109A Expired EP0056590B1 (fr)	1981-01-15	1982-01-09	Bain galvanique pour le dépôt de revêtements de rhodium

Country Status (5)

Country	Link
EP (1)	EP0056590B1 (fr)
JP (1)	JPS57137492A (fr)
BR (1)	BR8200158A (fr)
DE (2)	DE3100997C2 (fr)
HK (1)	HK51088A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2001048273A1 (fr) *	1999-12-23	2001-07-05	Degussa Galvanotechnik Gmbh	Bain de depot galvanique de revetements de rhodium blancs brillants et agent de blanchiment utilise
US8372744B2 (en) *	2007-04-20	2013-02-12	International Business Machines Corporation	Fabricating a contact rhodium structure by electroplating and electroplating composition
DE102019109188B4 (de) *	2019-04-08	2022-08-11	Umicore Galvanotechnik Gmbh	Verwendung eines Elektrolyten zur Abscheidung von anthrazit/schwarzen Rhodium/Ruthenium Legierungsschichten

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1771746A1 (de) *	1967-07-10	1971-12-30	Sel Rex Corp	Glaenzende Rhodium-Plattierung mit geringer Spannung
DE2226699A1 (de) *	1971-05-25	1972-12-28	Omf California Inc	Elektroplatierbad für den Niederschlag von Rhodium-Platin-Legierungen
DD109409A1 (fr) *	1974-01-31	1974-11-05
AT341850B (de) *	1975-02-07	1978-02-27	Schering Ag	Wasseriges ammoniakalisches bad zur galvanischen abscheidung von palladium-nickel-legierungen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5224131A (en) *	1975-08-14	1977-02-23	Dowa Mining Co	Luster* thick rhodium plating method
DE3176572D1 (en) *	1980-09-25	1988-01-21	Nippon Mining Co	Rhodium-plated article with black or blue color, process for making the same and bath therefor

1981
- 1981-01-15 DE DE3100997A patent/DE3100997C2/de not_active Expired
1982
- 1982-01-09 DE DE8282100109T patent/DE3263183D1/de not_active Expired
- 1982-01-09 EP EP82100109A patent/EP0056590B1/fr not_active Expired
- 1982-01-13 BR BR8200158A patent/BR8200158A/pt not_active IP Right Cessation
- 1982-01-13 JP JP57002915A patent/JPS57137492A/ja active Granted
1988
- 1988-07-07 HK HK510/88A patent/HK51088A/xx not_active IP Right Cessation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1771746A1 (de) *	1967-07-10	1971-12-30	Sel Rex Corp	Glaenzende Rhodium-Plattierung mit geringer Spannung
DE2226699A1 (de) *	1971-05-25	1972-12-28	Omf California Inc	Elektroplatierbad für den Niederschlag von Rhodium-Platin-Legierungen
DD109409A1 (fr) *	1974-01-31	1974-11-05
AT341850B (de) *	1975-02-07	1978-02-27	Schering Ag	Wasseriges ammoniakalisches bad zur galvanischen abscheidung von palladium-nickel-legierungen

Also Published As

Publication number	Publication date
DE3100997C2 (de)	1986-08-14
EP0056590B1 (fr)	1985-04-24
DE3100997A1 (de)	1982-08-05
HK51088A (en)	1988-07-15
JPH029115B2 (fr)	1990-02-28
DE3263183D1 (en)	1985-05-30
JPS57137492A (en)	1982-08-25
BR8200158A (pt)	1982-11-03

Legal Events

Date	Code	Title	Description
1982-05-29	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1982-07-28	17P	Request for examination filed	Effective date: 19820109
1982-07-28	AK	Designated contracting states	Designated state(s): CH DE FR GB IT
1984-10-26	ITF	It: translation for a ep patent filed
1985-02-22	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
1985-04-24	AK	Designated contracting states	Designated state(s): CH DE FR GB IT LI
1985-05-30	REF	Corresponds to:	Ref document number: 3263183 Country of ref document: DE Date of ref document: 19850530
1985-06-21	ET	Fr: translation filed
1986-02-25	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
1986-02-25	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
1986-04-16	26N	No opposition filed
1993-01-31	ITTA	It: last paid annual fee
1998-12-11	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 19981211 Year of fee payment: 18
1998-12-15	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 19981215 Year of fee payment: 18
1998-12-29	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: CH Payment date: 19981229 Year of fee payment: 18
1999-12-17	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 19991217 Year of fee payment: 19
2000-01-09	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20000109
2000-01-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20000131 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20000131
2000-08-30	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 20000109
2000-09-15	REG	Reference to a national code	Ref country code: CH Ref legal event code: PL
2000-09-29	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20000929
2000-11-10	REG	Reference to a national code	Ref country code: FR Ref legal event code: ST
2001-01-04	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DE Free format text: LAPSE BECAUSE OF THE APPLICANT RENOUNCES Effective date: 20010104

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DE832982C (de)	1952-03-03	Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Kupfer
DE1094245B (de)	1960-12-08	Bleidioxyd-Elektrode zur Verwendung bei elektrochemischen Verfahren
DE3875227T2 (de)	1993-03-18	Verfahren zur herstellung eines bades fuer die elektroplattierung einer binaeren zinn-kobalt-, zinn-nickel- oder zinn-blei- legierung und damit hergestelltes elektroplattierungsbad.
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DE860300C (de)	1952-12-18	Kupfer- und Zinnsalze enthaltender Elektrolyt zur Erzeugung von Kupfer-Zinn-Legierungsueberzuegen und Verfahren zum Erzeugen dieser UEberzuege
DE1250712B (de)	1967-09-21	Galvanisches Nickelsulfamatbad und Verfahren zum Abscheiden von Nickeluberzugen
DE2114119A1 (de)	1971-10-07	Verfahren zur elektrolytischen Abscheidung von Ruthenium und Elektrolysebad zur Durchfuehrung dieses Verfahrens
DE1521097A1 (de)	1969-07-10	Verfahren zum Herstellen korrosionsfreier,oberflaechenbehandelter Stahlbleche
DE2835539C2 (fr)	1989-02-23
EP0056590B1 (fr)	1985-04-24	Bain galvanique pour le dépôt de revêtements de rhodium
DE3244092A1 (de)	1983-06-23	Waessriges bad zur galvanischen abscheidung von gold und verfahren zur galvanischen abscheidung von hartgold unter seiner verwendung
DE3139815C2 (de)	1986-05-22	Verfahren zur galvanischen Herstellung eines einen Metallhärter enthaltenden Goldüberzugs
DE69109029T2 (de)	1995-11-23	Anode für Chrom-Elektroplattierung, Verfahren zur Herstellung und Verwendung dieser Anode.
DE2719555A1 (de)	1977-12-08	Verfahren zur herstellung einer gold/chrom-legierung aus einer elektrolytisch abgeschiedenen gold/chrom-oberflaeche
DE1496823B1 (de)	1970-11-26	Verfahren zum galvanischen Abscheiden von korrosionsbestaendigen,dreischichtigen Nickel- oder Nickel-Kobalt-Legierungsueberzuegen auf Metallen
DE2147257A1 (de)	1972-06-22	Galvanisches Bad und Verfahren zur Abscheidung halbglanzender Nickeluber züge
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DE1086508B (de)	1960-08-04	Saures galvanisches Kupferbad
DE3705949A1 (de)	1987-09-10	Waessriges saures bad und verfahren zur galvanischen abscheidung von zinklegierungen
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DE1696082A1 (de)	1971-11-18	Verfahren zur elektrolytischen Abscheidung von halbglaenzenden Nickelniederschlaegen
DE1771105C3 (de)	1977-02-03	Bad und Verfahren zum galvanischen Abscheiden von hellglänzenden Chromüberzügen
CH647268A5 (de)	1985-01-15	Elektroplattierungsbad fuer die ablagerung von metallischem palladium.