EP0073031A2 - Dispositif à émission de champ et son procédé de fabrication - Google Patents

Dispositif à émission de champ et son procédé de fabrication Download PDF

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Publication number
EP0073031A2
EP0073031A2 EP82107613A EP82107613A EP0073031A2 EP 0073031 A2 EP0073031 A2 EP 0073031A2 EP 82107613 A EP82107613 A EP 82107613A EP 82107613 A EP82107613 A EP 82107613A EP 0073031 A2 EP0073031 A2 EP 0073031A2
Authority
EP
European Patent Office
Prior art keywords
electrode
insulating layer
arrangement according
layer
edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP82107613A
Other languages
German (de)
English (en)
Other versions
EP0073031A3 (fr
Inventor
Dieter Dr. Fischer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Battelle Institut eV
Original Assignee
Battelle Institut eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Institut eV filed Critical Battelle Institut eV
Publication of EP0073031A2 publication Critical patent/EP0073031A2/fr
Publication of EP0073031A3 publication Critical patent/EP0073031A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Definitions

  • the invention relates to an arrangement for generating field emission on an element consisting of an electrically insulating plate, a first electrode, an insulating layer and a second electrode. It also relates to specific uses of such an arrangement and methods for its manufacture.
  • the invention is therefore based on the object of providing a simply constructed arrangement which can be used as a field emitter and with which gas discharges, in particular in plasma panels, can be ignited without delay.
  • the electrode 4 according to the invention consists preferably of a c a. 0.5 / ⁇ m thick aluminum layer. It is produced according to one of the methods described above in order to achieve island formation on the edges. In the case of photolithographic production, it can be structured in a simple manner in such a way that the total length of its edges, which face the electrode 2, is as large as possible. In the example according to FIG. 2, this is done through a window cutout 6.
  • the individual element can be very small, for example approx. 10 / um x 10 / um.
  • the field emission is measured with the aid of a secondary electron multiplier (Channeltron).
  • a secondary electron multiplier Channeltron
  • another is placed at a distance of approx. 50 / um from the electrode 4 with the aid of a spacer Electrode 7 attached, which is designed as a network.
  • the funnel 8 of a channeltron is located approximately 5 mm above the network 7.
  • the channeltron's gain is approximately 10 8 .
  • the arrangement is built into an evacuable housing and evacuated to approx. 10 mbar.
  • a voltage of +2.5 kV to +4.5 kV is applied in connection 9 of the channeltron and a voltage of +100 V to +200 V is applied to network 7.
  • the electrode 4 is at ground potential. If a voltage pulse of approximately 100 V is applied to the electrode 2, field emission occurs at the edges of the electrode 4. Part of the emitted electrons is accelerated by the suction network 7 to the channeltron and amplified there. After a delay time of approx. 25 ns (running time in the channeltron), the amplified signal can be measured at connection 10. The field emission occurs only in a period of approx. 100 ns and then breaks off again, even if the voltage at the electrode 2 is still present.
  • the threshold voltage for field emission in the example according to FIG. 4 is approximately 85 V. Because of this threshold, matrix control of many individual elements according to FIGS. 6a) and b) is possible.
  • the electrodes 2 form the rows, the electrodes 4 the columns of the matrix. They are separated from one another by the insulating layer 3. In the idle state, for example, all electrodes are at ground potential. If one now applies to one of the electrodes 2, for example -50 V and to one of the electrodes 4, for example + 50 V, the potential difference of 100 V lies at the crossing point of the two electrodes, which leads to field emission at this point if the islands are charged accordingly. The potential difference of 50 V is not exceeded anywhere else in the matrix, so that no field emission can occur there. The emission is detected in the arrangement described in FIG. 3.
  • FIG. 5 The structure of an electret store is shown in FIG. 5.
  • the memory is built up between two glass plates 1 and 1 '.
  • Parallel conductor tracks 2, 2 'and an insulating layer 3, 3' are applied to each of these plates.
  • a network is then produced in such a way that it forms the second electrode 4, 4 'with upstream islands and that the meshes of the network lie opposite the conductor tracks 2, 2'.
  • the insulating layers 3, 3 ' are charged (formed) with the aid of the liquid contact method and the
  • the glass is mounted with the aid of a spacer in such a way that the conductor tracks 2, 2 'applied to them run perpendicular to one another.
  • the gap is filled with neon + 0.1 argon and forms the gas discharge gap.
  • each crossing point of the conductor tracks 2, 2 ' ie in the meshes of the two networks 4, 4', there is a storage element in each case.
  • the network 4, 4 ' is connected to ground, the conductor tracks 2, 2' are driven earth-symmetrically to ignite the element located at the crossing point.
  • the full ignition voltage U Z is only at the crossing point of the first two electrodes 2, 2 '.
  • the voltage U L / 2 lies between the controlled first electrodes 2, 2 'and the associated network meshes 4, 4', so that field emission occurs at the network edges provided with islands. The electrons emitted thereby lead to instantaneous ignition of the gas discharge at the crossing point of the first electrodes 2, 2 '.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Gas-Filled Discharge Tubes (AREA)
EP82107613A 1981-08-26 1982-08-20 Dispositif à émission de champ et son procédé de fabrication Withdrawn EP0073031A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19813133786 DE3133786A1 (de) 1981-08-26 1981-08-26 Anordnung zur erzeugung von feldemission und verfahren zu ihrer herstellung
DE3133786 1981-08-26

Publications (2)

Publication Number Publication Date
EP0073031A2 true EP0073031A2 (fr) 1983-03-02
EP0073031A3 EP0073031A3 (fr) 1985-12-04

Family

ID=6140171

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82107613A Withdrawn EP0073031A3 (fr) 1981-08-26 1982-08-20 Dispositif à émission de champ et son procédé de fabrication

Country Status (6)

Country Link
EP (1) EP0073031A3 (fr)
JP (1) JPS5878350A (fr)
AU (1) AU8757782A (fr)
BR (1) BR8204960A (fr)
DE (1) DE3133786A1 (fr)
ZA (1) ZA826237B (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316027A1 (de) * 1983-05-03 1984-11-08 Dornier System Gmbh, 7990 Friedrichshafen Photodetektor
EP0260075A3 (en) * 1986-09-08 1989-05-10 The General Electric Company, P.L.C. Vacuum devices
EP0299461A3 (en) * 1987-07-15 1990-01-10 Canon Kabushiki Kaisha Electron-emitting device
US5661362A (en) * 1987-07-15 1997-08-26 Canon Kabushiki Kaisha Flat panel display including electron emitting device
EP1035559A3 (fr) * 1999-02-25 2006-05-03 Canon Kabushiki Kaisha Substrat avec émetteurs d'électrons et panneau d'affichage utilisant ledit substrat
USRE39633E1 (en) * 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40062E1 (en) * 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) * 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3642749A1 (de) * 1986-12-15 1988-06-23 Eltro Gmbh Oberflaechen fuer elektrische entladungen
CA1272504A (fr) * 1986-11-18 1990-08-07 Franz Prein Surface pour decharge electrique
EP0278405B1 (fr) * 1987-02-06 1996-08-21 Canon Kabushiki Kaisha Elément émetteur d'électrons et son procédé de fabrication

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3277313A (en) * 1963-07-05 1966-10-04 Burroughs Corp Solid state quantum mechanical tunneling apparatus
US3359448A (en) * 1964-11-04 1967-12-19 Research Corp Low work function thin film gap emitter
DE1589822A1 (de) * 1967-04-26 1970-03-26 Gentsch Dr Horst Emitter-Diode zur Erzeugung von Ionen und freien Elektronen
DE2627249A1 (de) * 1976-06-18 1977-12-29 Battelle Institut E V Speicherelement fuer einen loeschbaren, digitalen permanentspeicher

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316027A1 (de) * 1983-05-03 1984-11-08 Dornier System Gmbh, 7990 Friedrichshafen Photodetektor
EP0260075A3 (en) * 1986-09-08 1989-05-10 The General Electric Company, P.L.C. Vacuum devices
US5749763A (en) * 1987-07-15 1998-05-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulted from electrodes
US5066883A (en) * 1987-07-15 1991-11-19 Canon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
US5532544A (en) * 1987-07-15 1996-07-02 Ganon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
US5661362A (en) * 1987-07-15 1997-08-26 Canon Kabushiki Kaisha Flat panel display including electron emitting device
EP0299461A3 (en) * 1987-07-15 1990-01-10 Canon Kabushiki Kaisha Electron-emitting device
US5759080A (en) * 1987-07-15 1998-06-02 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated form electrodes
US5872541A (en) * 1987-07-15 1999-02-16 Canon Kabushiki Kaisha Method for displaying images with electron emitting device
USRE39633E1 (en) * 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40062E1 (en) * 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) * 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
EP1035559A3 (fr) * 1999-02-25 2006-05-03 Canon Kabushiki Kaisha Substrat avec émetteurs d'électrons et panneau d'affichage utilisant ledit substrat

Also Published As

Publication number Publication date
ZA826237B (en) 1983-07-27
JPS5878350A (ja) 1983-05-11
BR8204960A (pt) 1983-08-02
EP0073031A3 (fr) 1985-12-04
AU8757782A (en) 1983-03-03
DE3133786A1 (de) 1983-03-10

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Effective date: 19860303

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Inventor name: FISCHER, DIETER, DR.